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| 3. |
- Kukli, K., et al.
(författare)
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Atomic layer deposition of ZrO2 and HfO2 on deep trenched and planar silicon
- 2007
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 84:9-10, s. 2010-2013
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Tidskriftsartikel (refereegranskat)abstract
- Conformal ZrO2 and HfO2 thin films were grown by atomic layer deposition using novel liquid cyclopentadienyl precursors at 300 degrees C or 350 degrees C on planar Si wafers and deep trenched Si with an aspect ratio of 60:1. The crystal growth and phase content in as-deposited films depended on the precursor, film thickness, and the material grown. The structural and electrical behaviour of the films were somewhat precursor-dependent, revealing better insulating properties in the films grown from oxygen-containing precursors. Also the HfO2 films showed lower leakage compared to ZrO2.
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| 5. |
- Martensson, P, et al.
(författare)
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Use of atomic layer epitaxy for fabrication of Si/TiN/Cu structures
- 1999
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Ingår i: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. - : AMER INST PHYSICS. ; 17:5
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- The properties of titanium nitride deposited by atomic layer epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between copper and silicon were investigated. After deposition and a
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- Dong Su, Lee, et al.
(författare)
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Quantum dot manipulation in a single-walled carbon nanotube using a carbon nanotube gate
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:23, s. 233107-1
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Tidskriftsartikel (refereegranskat)abstract
- Cross junctions of carbon nanotubes (CNTs) separated by thin oxide layers have been fabricated, in which the top CNT is used as a local gate to control the electron transport through the lower CNT. Coulomb oscillation was observed in the lower CNTs at low temperatures. The gating field from the upper CNTs is seen to modulate the band structure in the lower CNTs, producing double quantum dot systems. The ability to modulate the electronic structure of CNTs in such a way opens up many possibilities for future electronic and logical nanodevices
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| 8. |
- Duenas, S., et al.
(författare)
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Electrical properties of atomic-layer-deposited thin gadolinium oxide high-k gate dielectrics
- 2007
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 154:10, s. G207-G214
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Tidskriftsartikel (refereegranskat)abstract
- Amorphous or cubic Gd2O3 thin films were grown from tris ( 2,3-dimethyl-2-butoxy)gadolinium( III) , Gd [OC(CH3)(2)CH(CH3)(2))(3)], and H2O precursors at 350 degrees C. As-deposited Gd2O3 films grown on etched (H-terminated) Si(100) exhibited better leakage current-voltage characteristics as well as lower flatband voltage shift than films grown on SiO2/ Si substrates. Interface trap densities were lower in Al/Gd2O3/ hydrofluoric acid (HF)-etched Si samples annealed at rather high temperatures.
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| 9. |
- Dueñas, S., et al.
(författare)
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Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon
- 2006
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 100:9, s. 094107-
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Tidskriftsartikel (refereegranskat)abstract
- This work examines the structural and electrical properties of HfSixOy film based metal-insulator-semiconductor capacitors by means of x-ray diffraction, x-ray photoelectron spectroscopy, capacitance-voltage (C-V), deep level transient spectroscopy, and conductance transient (G-t) techniques. Hafnium-rich silicate films were atomic layer deposited onto HF-etched or SiO2 covered silicon. Although as-deposited samples exhibit high interfacial state and disorder-induced gap state densities, a postdeposition thermal annealing in vacuum under N2 flow for 1 min at temperatures between 600 and 730 °C clearly improves the interface quality. Marked crystallization and phase separation occurred at 800 °C, increasing the structural heterogeneity and defect density in the dielectric oxide layers.
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| 10. |
- Duenas, S., et al.
(författare)
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Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films
- 2008
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Ingår i: Journal of Non-Crystalline Solids. - : Elsevier BV. - 0022-3093 .- 1873-4812. ; 354:2-9, s. 404-408
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Tidskriftsartikel (refereegranskat)abstract
- Routes to atomic layer-deposited TiO2 films With decreased leakage have been studied by using electrical characterization techniques. The combination of post-deposition annealing parameters, time and temperature, which provides measurable aluminum-titanium oxide-silicon structures - i.e., having capacitance-voltage curves which show accumulation behavior - are 625 degrees C, 10 min for p-type substrates, and 550 degrees C, 10 min for n-type substrates. The best annealing conditions for p-type substrates are 625 degrees C with the length extended to 30 min, which produces an interfacial state density of about 5-6 x 10(11) cm(-2) eV(-1), and disordered-induced gap state density below our experimental limits. We have also proved that a post-deposition annealing must be applied to TiO2/HfO2 and HfO2/TiO2/HfO2 stacked structures to obtain adequate measurability conditions.
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| 18. |
- Strömme, Maria, et al.
(författare)
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(Ta1-xNbx)(2)O-5 films produced by atomic layer deposition : Temperature dependent dielectric spectroscopy and room-temperature I-V characteristics
- 2001
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 90:9, s. 4532-4542
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Tidskriftsartikel (refereegranskat)abstract
- Temperature dependent ac dielectric spectroscopy and room-temperature I–V characterization were performed on atomic layer deposited(Ta1−xNbx)2O5films. The high frequency permittivity, as well as the dc conductivity of the films, were found to increase with increasing Nb content. The conduction mechanism in the mixed Ta–Nb oxide films was of the Poole–Frenkel type, while the high field conduction in pure Ta2O5 was space-charge limited. The activation energy for dc conduction was higher in mixed Ta–Nb oxides compared to pure Ta2O5 and Nb2O5films. Irreversible changes in the conduction mechanism took place upon heat treatment above a certain irreversibility temperature. This temperature was higher for the mixed oxides than for the binary ones.
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| 19. |
- Kokkonen, E., et al.
(författare)
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Ambient pressure x-ray photoelectron spectroscopy setup for synchrotron-based in situ and operando atomic layer deposition research
- 2022
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Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 1089-7623 .- 0034-6748. ; 93:1
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Tidskriftsartikel (refereegranskat)abstract
- An ambient pressure cell is described for conducting synchrotron-based x-ray photoelectron spectroscopy (XPS) measurements during atomic layer deposition (ALD) processes. The instrument is capable of true in situ and operando experiments in which it is possible to directly obtain elemental and chemical information from the sample surface using XPS as the deposition process is ongoing. The setup is based on the ambient pressure XPS technique, in which sample environments with high pressure (several mbar) can be created without compromising the ultrahigh vacuum requirements needed for the operation of the spectrometer and the synchrotron beamline. The setup is intended for chemical characterization of the surface intermediates during the initial stages of the deposition processes. The SPECIES beamline and the ALD cell provide a unique experimental platform for obtaining new information on the surface chemistry during ALD half-cycles at high temporal resolution. Such information is valuable for understanding the ALD reaction mechanisms and crucial in further developing and improving ALD processes. We demonstrate the capabilities of the setup by studying the deposition of TiO2 on a SiO2 surface by using titanium(IV) tetraisopropoxide and water as precursors. Multiple core levels and the valence band of the substrate surface were followed during the film deposition using ambient pressure XPS.
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| 20. |
- Kukli, Kaupo, et al.
(författare)
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Atomic layer deposition of Ru films from bis(2,5-dimethylpyrrolyl)ruthenium and oxygen
- 2012
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 520:7, s. 2756-2763
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Tidskriftsartikel (refereegranskat)abstract
- Ru thin films were grown on hydrogen terminated Si, SiO2, Al2O3, HfO2, and TiO2 surfaces by atomic layer deposition from bis(2,5-dimethylpyrrolyl)ruthenium precursor and oxygen. The 4-20 nm thick films on these surfaces consisted of nanocrystalline hexagonal metallic ruthenium, regardless of the deposition temperature. At the lowest temperatures examined, 250-255 degrees C, the growth of the Ru films was favored on silicon, compared to the growth on Al2O3, TiO2 and HfO2. At higher temperatures the nucleation and growth of Ru became enhanced in particular on HfO2, compared to the process on silicon. At 320-325 degrees C, no growth occurred on Si-H and SiO2-covered silicon. Resistivity values down to 18 mu Omega.cm were obtained for ca. 10 nm thick Ru films.
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