| 1. |
- García-Fernández, Alberto, et al.
(författare)
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Composition dependence of X-ray stability and degradation mechanisms at lead halide perovskite single crystal surfaces
- 2024
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Ingår i: Physical Chemistry, Chemical Physics - PCCP. - : Royal Society of Chemistry. - 1463-9076 .- 1463-9084. ; 26:2, s. 1000-1010
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Tidskriftsartikel (refereegranskat)abstract
- The multiple applications of lead halide perovskite materials and the extensive use of X-ray based techniques to characterize them highlight a need to understand their stability under X-ray irradiation. Here, we present a study where the X-ray stability of five different lead halide perovskite compositions (MAPbI3, MAPbCl3, MAPbBr3, FAPbBr3, CsPbBr3) was investigated using photoelectron spectroscopy. To exclude effects of thin film formation on the observed degradation behaviors, we studied clean surfaces of single crystals. Different X-ray resistance and degradation mechanisms were observed depending on the crystal composition. Overall, perovskites based on the MA+ cation were found to be less stable than those based on FA+ or Cs+. Metallic lead formed most easily in the chloride perovskite, followed by bromide, and only very little metallic lead formation was observed for MAPbI3. MAPbI3 showed one main degradation process, which was the radiolysis of MAI. Multiple simultaneous degradation processes were identified for the bromide compositions. These processes include ion migration towards the perovskite surface and the formation of volatile and solid products in addition to metallic lead. Lastly, CsBr formed as a solid degradation product on the surface of CsPbBr3.
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| 2. |
- Garcia Fernandez, Alberto, et al.
(författare)
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Interface Energy Alignment between Lead Halide Perovskite Single Crystals and TIPS-Pentacene
- 2023
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Ingår i: Inorganic Chemistry. - : American Chemical Society (ACS). - 0020-1669 .- 1520-510X. ; 62:38, s. 15412-15420
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Tidskriftsartikel (refereegranskat)abstract
- At present, there is a huge development in optoelectronic applications using lead halide perovskites. Considering that device performance is largely governed by the transport of charges across interfaces and, therefore, the interfacial electronic structure, fundamental investigations of perovskite interfaces are highly necessary. In this study, we use high-resolution soft X-ray photoelectron spectroscopy based on synchrotron radiation to explore the interfacial energetics for the molecular layer of TIPS-pentacene and lead halide perovskite single crystals. We perform ultrahigh vacuum studies on multiple thicknesses of an in situ formed interface of TIPS-pentacene with four different in situ cleaved perovskite single crystals (MAPbI3, MAPbBr3, FAPbBr3, and CsxFA1-xPbBryI3-y). Our findings reveal a substantial shift of the TIPS-pentacene energy levels toward higher binding energies with increasing thickness, while the perovskite energy levels remain largely unaffected regardless of their composition. These shifts can be interpreted as band bending in the TIPS-pentacene, and such effects should be considered when assessing the energy alignment at perovskite/organic transport material interfaces. Furthermore, we were able to follow a reorganization on the MAPbI3 surface with the transformation of the surface C 1s into bulk C 1s.
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| 3. |
- Mukherjee, Soham, et al.
(författare)
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Interplay between Growth Mechanism, Materials Chemistry, and Band Gap Characteristics in Sputtered Thin Films of Chalcogenide Perovskite BaZrS3
- 2023
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Ingår i: ACS Applied Energy Materials. - : American Chemical Society (ACS). - 2574-0962. ; 6:22, s. 11642-11653
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Tidskriftsartikel (refereegranskat)abstract
- The prototypical chalcogenide perovskite BaZrS3, characterized by its direct band gap, exceptionally strong light-harvesting ability, and good carrier transport properties, provides fundamental prerequisites for a promising photovoltaic material. This inspired the synthesis of BaZrS3 in the form of thin films, using sputtering and rapid thermal processing, aimed at device fabrication for future optoelectronic applications. Using a combination of short- and long-range structural information from X-ray absorption spectroscopy (XAS) and X-ray diffraction (XRD), we have elucidated how, starting from a random network of Ba, Zr, and S atoms, thermal treatment induces crystallization and growth of BaZrS3 and explained its impact on the observed photoluminescence (PL) properties. We also provide a description of the electronic structure and substantiate the surface material chemistry using a combination of depth-dependent photoelectron spectroscopy (PES) using hard X-ray (HAXPES) and traditional Al K alpha radiation. From the knowledge of the optical band gap of BaZrS3 thin films, synthesized at an optimal temperature of 900 C-degrees, and our estimation of the valence band edge position with respect to the Fermi level, one may conclude that these semiconductor films are intrinsic in nature with a slight n-type character. A detailed understanding of the growth mechanism and electronic structure of BaZrS3 thin films helps pave the way toward their utilization in photovoltaic applications.
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| 4. |
- Nicolas, Aude, et al.
(författare)
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Genome-wide Analyses Identify KIF5A as a Novel ALS Gene
- 2018
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Ingår i: Neuron. - : Cell Press. - 0896-6273 .- 1097-4199. ; 97:6, s. 1268-1283.e6
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Tidskriftsartikel (refereegranskat)abstract
- To identify novel genes associated with ALS, we undertook two lines of investigation. We carried out a genome-wide association study comparing 20,806 ALS cases and 59,804 controls. Independently, we performed a rare variant burden analysis comparing 1,138 index familial ALS cases and 19,494 controls. Through both approaches, we identified kinesin family member 5A (KIF5A) as a novel gene associated with ALS. Interestingly, mutations predominantly in the N-terminal motor domain of KIF5A are causative for two neurodegenerative diseases: hereditary spastic paraplegia (SPG10) and Charcot-Marie-Tooth type 2 (CMT2). In contrast, ALS-associated mutations are primarily located at the C-terminal cargo-binding tail domain and patients harboring loss-of-function mutations displayed an extended survival relative to typical ALS cases. Taken together, these results broaden the phenotype spectrum resulting from mutations in KIF5A and strengthen the role of cytoskeletal defects in the pathogenesis of ALS.
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| 5. |
- Sloboda, Tamara, et al.
(författare)
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Photovoltage Generation across Different Interfaces in a PbS QuantumDot Solar Cell Investigated by Time-Resolved PhotoelectronSpectroscopy
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Quantum dot solar cells have not yet achieved optimal device performances and to direct development there is thereforea need to understand the device function of present solar cell structures in more detail. Understanding where photovoltage isgenerated in a device and where energy losses occur is a key aspect of this. We have previously shown that time-resolved core levelphotoelectron spectroscopy can be used to follow the photovoltage rise and decay at a specific interface from pico- to microsecondtimescales. Here, we extend this study and investigate the photovoltage generation in different parts of a PbS quantum dot solar cellthrough sample design. We show that thick absorbing quantum dot layers are required for generating a high photovoltage at theinterface between n-type PbS quantum dots and p-type quantum dots. Furthermore, we show that the full photovoltage is only generatedwhen a gold contact is deposited on the quantum dots and that the presence of this contact also leads to significantly slowercharge recombination.
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