2. |
- Strassner, M, et al.
(författare)
-
III-V semiconductor material for tunable Fabry-Perot filters for coarse and dense WDM systems
- 2000
-
Ingår i: SENSORS AND ACTUATORS A-PHYSICAL. - : ELSEVIER SCIENCE SA. - 0924-4247. ; 85:1-3, s. 249-255
-
Tidskriftsartikel (refereegranskat)abstract
- In the following payer, we report on the investigation of the mechanical properties of InP grown on InGaAs by organic metal vapor phase epitaxy (OMVPE). When InP is grown, it is stressed due to an unintentional arsenic doping profile. This stress gradient
|
|