| 1. |
- Bakowski, Mietek, et al.
(författare)
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Design and characterization of newly developed 10 kV 2 A SiC p-i-n diode for soft-switching industrial power supply
- 2015
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Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers Inc.. - 0018-9383 .- 1557-9646. ; 62:2, s. 366-373
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Tidskriftsartikel (refereegranskat)abstract
- 10 kV, 2 A SiC p-i-n diodes have been designed and fabricated. The devices feature excellent stability of forward characteristics and robust junction termination with avalanche capability of 1 J. The fabricated diodes have been electrically evaluated with respect to dynamic ON-state voltage, reverse recovery behavior, bipolar stability, and avalanche capability. More than 60% reduction of losses has been demonstrated using newly developed 10-kV p-i-n diodes in a multikilowatt high voltage, high-frequency dc/dc soft-switching converter
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| 2. |
- Gabrysch, Markus, et al.
(författare)
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Compensation in boron-doped CVD diamond
- 2008
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Ingår i: Physica status solidi. A, Applications and Materials Science. - : Wiley. - 1862-6300. ; 205:9, s. 2190-2194
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Tidskriftsartikel (refereegranskat)abstract
- Hall-effect measurements on single crystal boron-doped CVD diamond in the temperature interval 80-450 K are presented together with SIMS measurements of the dopant concentration. Capacitance-voltage measurements on rectifying Schottky junctions manufactured on the boron-doped structures are also presented in this context. Evaluation of the compensating donor (N-D) and acceptor concentrations (N-A) show that in certain samples very low compensation ratios (N-D/N-A below 10(-4)) have been achieved. The influence of compensating donors on majority carrier transport and the significance for diamond device performance are briefly discussed.
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| 3. |
- Ghandi, Reza, et al.
(författare)
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Surface-passivation effects on the performance of 4H-SiC BJTs
- 2011
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 58, s. 259-265
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Tidskriftsartikel (refereegranskat)abstract
- In this brief, the electrical performance in terms of maximum current gain and breakdown voltage is compared experimentally and by device simulation for 4H-SiC BJTs passivated with different surface-passivation layers. Variation in bipolar junction transistor (BJT) performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for plasma-deposited SiO2 which was annealed in N2O ambient at 1100 °C for 3 h. Variations in breakdown voltage for different surface passivations were also found, and this was attributed to differences in fixed oxide charge that can affect the optimum dose of the high-voltage junction-termination extension (JTE). The dependence of breakdown voltage on the dose was also evaluated through nonimplanted BJTs with etched JTE.
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| 4. |
- Lorenzzi, Jean, et al.
(författare)
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3C-SiC MOS based devices : from material growth to device characterization
- 2011
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Ingår i: Silicon carbide and related materials 2010. - : Trans Tech Publications, Ltd.. ; , s. 433-
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Konferensbidrag (refereegranskat)abstract
- In this work we report on the growth and preparation of 3C-SiC(111) material for metal-oxide-semiconductor (MOS) application. In order to achieve reasonable material quality to prepare MOS capacitors several and crucial steps are needed: 1) heteroepitaxial growth of high quality 3C-SiC(111) layer by vapour-liquid-solid mechanism on 6H-SiC(0001) substrate, 2) surface polishing, 3) homoepitaxial re-growth by chemical vapour deposition and 4) use of an advanced oxidation process combining plasma enhanced chemical vapour deposition (PECVD) SiO2 and short post-oxidation steps in wet oxygen. Combining all these processes the interface traps density (D-it)can be drastically decreased down to 1.2 x 10(10) eV(-1)cm(-2) at 0.63 eV below the conduction band. To our knowledge, these values are the best ever reported for SiC material in general and 3C-SiC in particular.
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| 5. |
- Tia, Kai, et al.
(författare)
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Modelling the static on-state current voltage characteristics for a 10 kV 4H-SiC PiN diode
- 2020
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 115
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Tidskriftsartikel (refereegranskat)abstract
- A 10 kV 4H-SiC epitaxial PiN diode is fabricated and the measured static on-state current voltage characteristics are used to tune the physical models and parameters included in TCAD device simulations. From the measurements it is found that the on-state voltage drop decreases more than 0.5 V at a current density of 100 A/cm(2), as the temperature is raised from room temperature to 300 degrees C. The steep slope of the IV-curve is, furthermore, maintained at elevated temperatures in contrast to most silicon PiN structures, where the decrease in mobility at higher temperatures typically decreases the IV slope, resulting in an increased voltage drop. Physical device simulations, involving common models for bandgap, incomplete ionization, charge carrier lifetime and mobility, are systematically compared and optimized to obtain the best fit with measured data. The negative temperature dependence can be simulated with good precision although the fitting is very sensitive to the choice of mobility models and, in particular, the acceptor ionization energy.
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| 6. |
- Usman, Muhammad, et al.
(författare)
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Toward the Understanding of Stacked Al-Based High-k Dielectrics for Passivation of 4H-SiC Devices
- 2011
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 158:1, s. H75-H79
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Tidskriftsartikel (refereegranskat)abstract
- Metal insulator semiconductor structures using high-k materials have been prepared and investigated for the passivation of 4H-SiC surfaces. Alternate layers of AlN and Al2O3 were deposited on 8 nm thermally grown SiO2 on epitaxial SiC, forming multilayer stacked dielectrics. Atomic layer deposition (ALD) has been used for the deposition. Our results show that the AlN, deposited by ALD, has a columnar polycrystalline structure with boundaries related to the step bunching of SiC epitaxial layer. Capacitance-voltage measurements have been performed at room temperature, 100, 200, and 300 degrees C. Annealing of the samples was also performed at these temperatures and they were consecutively measured at room temperature. Current-voltage measurements have also been performed before and after annealing. It has been observed that the stack with a bottom layer of Al2O3, forming an interface with the thin SiO2, is more stable at high temperatures; however, its breakdown voltage is less than that of the other stack with AlN forming the bottom layer. The breakdown behavior of the stacks is also found to be different depending on the order of AlN and Al2O3 layers.
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