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Sökning: WFRF:(Smillie Jim)

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1.
  • Gemmell, Neil J., et al. (författare)
  • The tuatara genome reveals ancient features of amniote evolution
  • 2020
  • Ingår i: Nature. - : Springer Nature. - 0028-0836 .- 1476-4687. ; 584:7821, s. 403-409
  • Tidskriftsartikel (refereegranskat)abstract
    • The tuatara (Sphenodon punctatus)—the only living member of the reptilian order Rhynchocephalia (Sphenodontia), once widespread across Gondwana1,2—is an iconic species that is endemic to New Zealand2,3. A key link to the now-extinct stem reptiles (from which dinosaurs, modern reptiles, birds and mammals evolved), the tuatara provides key insights into the ancestral amniotes2,4. Here we analyse the genome of the tuatara, which—at approximately 5 Gb—is among the largest of the vertebrate genomes yet assembled. Our analyses of this genome, along with comparisons with other vertebrate genomes, reinforce the uniqueness of the tuatara. Phylogenetic analyses indicate that the tuatara lineage diverged from that of snakes and lizards around 250 million years ago. This lineage also shows moderate rates of molecular evolution, with instances of punctuated evolution. Our genome sequence analysis identifies expansions of proteins, non-protein-coding RNA families and repeat elements, the latter of which show an amalgam of reptilian and mammalian features. The sequencing of the tuatara genome provides a valuable resource for deep comparative analyses of tetrapods, as well as for tuatara biology and conservation. Our study also provides important insights into both the technical challenges and the cultural obligations that are associated with genome sequencing.
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2.
  • Tran, Tuan, et al. (författare)
  • High hole mobility and non-localized states in amorphous germanium
  • 2023
  • Ingår i: APL Materials. - : AIP Publishing. - 2166-532X. ; 11:4, s. 041115-
  • Tidskriftsartikel (refereegranskat)abstract
    • Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical conductivity is thought to occur through the hopping mechanism via these localized states. The carrier mobility of these materials is usually very low, in the order of similar to 10(-3)-10(-2) cm(2)/Vs at room temperature. In this study, we show that pure high-density amorphous Ge has exceptionally high carrier mobility, in the order of similar to 100 cm(2)/Vs, and a high hole concentration of similar to 10(18) cm(-3). The temperature-dependent conductivity of the material is also very-well defined with two distinctive regions, extrinsic and intrinsic conductivity, as in crystalline Ge. These results provide direct evidence for a largely preserved band structure and non-localized states within the valence band in high-density amorphous Ge, as previously suggested by Tauc et al. from optical characterization alone.
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