| 1. |
- Cha, Eunjung, 1985, et al.
(författare)
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Cryogenic low-noise InP HEMTs: A source-drain distance study
- 2016
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Ingår i: 2016 Compound Semiconductor Week, CSW 2016. - 9781509019649 ; , s. Article number 7528576-
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Konferensbidrag (refereegranskat)abstract
- The scaling effect of the source-drain distance was investigated in order to improve the performance of low-noise InP HEMTs at cryogenic temperatures 4-15 K. The highest dc transconductance at an operating temperature of 4.8 K and low bias power was achieved at a source-drain distance of 1.4 mu m. The extracted HEMT minimum noise temperature was 0.9 K at 5.8 GHz for a 3-stage 4-8 GHz hybrid low-noise amplifier at 10 K.
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| 2. |
- Cha, Eunjung, et al.
(författare)
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Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka-and Q-Band LNAs
- 2017
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Ingår i: IEEE transactions on microwave theory and techniques. - : Institute of Electrical and Electronics Engineers Inc.. - 0018-9480 .- 1557-9670. ; 65:12, s. 5171-5180
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the cryogenic stability of two-finger 100-nm gate-length InP HEMTs aimed for Ka-and Q-band ultra-low noise amplifiers (LNAs). InP HEMTs with unit gate widths ranging between 30 and 50 mu text{m} exhibit unstable cryogenic behavior with jumps in drain current and discontinuous peaks in transconductance. We also find that shorter gate length enhances the cryogenic instability. We demonstrate that the instability of two-finger transistors can be suppressed by either adding a source air bridge, connecting the back end of gates, or increasing the gate resistance. A three-stage 24-40 GHz and a four-stage 28-52-GHz monolithic microwave-integrated circuit LNA using the stabilized InP HEMTs are presented. The Ka-band amplifier achieves a minimum noise temperature of 7 K at 25.6 GHz with an average noise temperature of 10.6 K at an ambient temperature of 5.5 K. The amplifier gain is 29 dB ± 0.6 dB. The Q-band amplifier exhibits minimum noise temperature of 6.7 K at 32.8 GHz with average noise temperature of 10 K at ambient temperature of 5.5 K. The amplifier gain is 34 dB ± 0.8 dB. To our knowledge, the Ka-and Q-band amplifiers demonstrate the lowest noise temperature reported so far for InP cryogenic LNAs. © 1963-2012 IEEE.
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| 3. |
- Cha, Eunjung, 1985, et al.
(författare)
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Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs
- 2017
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 65:12, s. 5171-5180
-
Tidskriftsartikel (refereegranskat)abstract
- We investigate the cryogenic stability of two-finger 100-nm gate-length InP HEMTs aimed for Ka- and Q-band ultra-low noise amplifiers (LNAs). InP HEMTs with unit gate widths ranging between 30 and 50 mu m exhibit unstable cryogenic behavior with jumps in drain current and discontinuous peaks in transconductance. We also find that shorter gate length enhances the cryogenic instability. We demonstrate that the instability of two-finger transistors can be suppressed by either adding a source air bridge, connecting the back end of gates, or increasing the gate resistance. A three-stage 24-40 GHz and a four-stage 28-52-GHz monolithic microwave-integrated circuit LNA using the stabilized InP HEMTs are presented. The Ka-band amplifier achieves a minimum noise temperature of 7 K at 25.6 GHz with an average noise temperature of 10.6 K at an ambient temperature of 5.5 K. The amplifier gain is 29 dB +/- 0.6 dB. The Q-band amplifier exhibits minimum noise temperature of 6.7 K at 32.8 GHz with average noise temperature of 10 K at ambient temperature of 5.5 K. The amplifier gain is 34 dB +/- 0.8 dB. To our knowledge, the Ka- and Q-band amplifiers demonstrate the lowest noise temperature reported so far for InP cryogenic LNAs.
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| 4. |
- Cha, Eunjung, 1985, et al.
(författare)
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Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs
- 2017
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509063604 ; , s. 168-171
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Konferensbidrag (refereegranskat)abstract
- We have investigated the cryogenic stability of two-finger InP HEMTs aimed for Ka-band ultra-low noise amplifiers (LNAs). Unlike two-finger transistors with a large gate-width above 2 χ 50 μm, the transistors with a small gate-width exhibit unstable cryogenic behavior. The instability is suppressed by adding a source air-bridge. The stabilizing effect of the air-bridge is demonstrated both on device and circuit level. A three-stage 2440 GHz monolithic microwave integrated circuit (MMIC) LNA using a stabilized 100-nm HEMT technology is presented. The amplifier achieves a record noise temperature of 7 K at 25.6 GHz with an average noise of 10.6 K across the whole band at an ambient temperature of 5.5 K. The amplifier gain is 29 dB ± 0.6 dB exhibiting very stable and repeatable operation. To our knowledge, this amplifier presents the lowest noise temperature reported so far for InP cryogenic LNAs covering the Ka-band.
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| 5. |
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| 6. |
- Goia, Naiara, 1978, et al.
(författare)
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Cryogenic X-Band Low Noise Amplifiers
- 2007
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Ingår i: 4th ESA International Workshop on Tracking, Telemetry & Command Systems for Space Applications.
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Konferensbidrag (refereegranskat)abstract
- This paper describes a number of cryogenic low noise amplifiers with very low noise for the frequency band 8.4-8.5 GHz. The amplifiers have been designed with different inputs: ostandard coaxialowaveguide ocoaxial followed by a high directivity 30 dB microstrip couplerAt 10 K ambient temperature the three-stage partly InP-based amplifiers have a gain of 33.0+/-0.5 dB and a noise temperature of 5 -7K.The InP transistors used in the amplifiers were processed at Chalmers clean room facility in our own proprietary process.
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| 7. |
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| 8. |
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| 9. |
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| 10. |
- Kärnfelt, Camilla, 1965, et al.
(författare)
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Flip Chip Assembly of a 40-60 GHz GaAs Microstrip Amplifier
- 2004
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Ingår i: Proceedings of 34th European Microwave Conference. ; 1:1, s. 89-92
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- This paper describes the successful flip chip assembly of a broadband GaAs amplifier in microstrip design. The flip chip technology used was thermo compression (TC) flip chip bonding of the MMICs to gold ball bumps bonded on the thin film patterned alumina carrier. Also, we report on the occurrence of parasitic parallel plate (PPL) modes in the assemblies and we propose and investigate a scheme to eliminate the modes which, to the best our knowledge, have not been reported on before.Finally we introduce our own flip chip transition equivalent circuit and we use this model in ADS to compare the simulated results with measurements. It is fair to say that the equivalent circuit models the flip chip transition well. This work was performed in the European MEDEA+ packaging project HIMICRO.
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| 11. |
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| 12. |
- Kärnfelt, Camilla, 1965, et al.
(författare)
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GaAs Flip Chip Evaluation in the 3 to 110 GHz Range
- 2004
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Ingår i: Proceedings 3rd European Microelectronics and Packaging Symposium. - 802392835X ; 1:1, s. 181-186
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- In the European MEDEA+ packaging project HIMICRO (Novel Packaging Technologies for Highly Integrated MICRO modules for Next Generation Telecom and Automotive Products), we address the problem to flip chip mount unbumped chips for prototyping and low volume production as a step on the way towards higher volumes. Two different flip chip (FC) interconnect technologies have been evaluated by measurements of the scattering parameters after initial electromagnetic (EM) simulation of the general structure: 1.Thermo compression (TC) flip chip bonding of the MMICs to gold ball bumps bonded on the substrate2.TC flip chip bonding of the MMICs to electrolytically plated gold pillars on the substrate Also, the possible occurrence of parasitic parallel plate (PPL) modes in flip chip assemblies with microstrip (MS), coplanar waveguide (CPW) and backside plated coplanar waveguide (BPCPW) MMICs (Microwave Monolithic Integrated Circuits) is investigated and compared. In addition, the effect of adding a resistive layer on the thin film substrate is evaluated.
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| 13. |
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| 14. |
- Lundh, Ros-Marie, et al.
(författare)
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Processing of RF-MEMS Switches
- 2004
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Ingår i: MEMSWAVE, June 30-July 2, 2004, Uppsala, Sweden.
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Konferensbidrag (refereegranskat)
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| 15. |
- Malmkvist, Mikael, 1978, et al.
(författare)
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Noise optimization of InP HEMTs
- 2006
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Ingår i: Proc. European Workshop on Compound Semiconductor Devices and Integrated Circuits. ; , s. 97-99
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Konferensbidrag (refereegranskat)
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| 16. |
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| 17. |
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| 18. |
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| 19. |
- Nilsson, Per-Åke, 1964, et al.
(författare)
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An InP MMIC process optimized for low noise at Cryo
- 2014
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Ingår i: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. - 1550-8781. - 9781479936229
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Konferensbidrag (refereegranskat)abstract
- An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.
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| 20. |
- Nilsson, Per-Åke, 1964, et al.
(författare)
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Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process
- 2016
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Ingår i: Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. ; 1, s. Art. no. 7411746-
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Konferensbidrag (refereegranskat)abstract
- An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogenic temperatures. The process was run on 4” wafers and utilized 130 nm gate-length HEMTs. Several wide band LNAs were made in a frequency range between 1 GHz and 100 GHz. A Ka band LNA had a minimum noise temperature of 10 K and a gain of 35 dB.
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| 21. |
- Rudnicki, Janusz, 1974, et al.
(författare)
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Simulations, measurements and equivalent circuit for a CPW-CPW vertical interconnection
- 2004
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Ingår i: International conference on Microwaves, Radar and Wireless Communications. ; 2:1, s. 682-685
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Computer simulations and measured results for vertical interconnections between a CPW transmission line and a CPW chip (CPW-CPW) are presented. An equivalent circuit, containing frequency independent elements, was extracted up to 65 GHz and is also presented.
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| 22. |
- Schleeh, Joel, 1986, et al.
(författare)
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Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
- 2012
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
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Konferensbidrag (refereegranskat)abstract
- A 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP HEMT process. A packaged LNA has been measured at both 300 K and 15 K. At 300 K the measured minimum noise temperature was 48 K at 7 GHz. At 15 K the measured minimum noise temperature was 3 K at 7 GHz and below 7 K within the entire 0.5-13 GHz band. The gain was between 34 dB and 40 dB at 300 K and between 38 dB and 44 dB at 4 K.
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| 23. |
- Schleeh, Joel, 1986, et al.
(författare)
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Cryogenic Broadband Ultra-Low-Noise MMIC LNAs for Radio Astronomy Applications
- 2013
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 61:2, s. 871-877
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Tidskriftsartikel (refereegranskat)abstract
- 0.5–13 and 24–40 GHz broadband cryogenic monolithic-microwave integrated-circuit low-noise amplifiers (LNAs)have been designed and fabricated using a 130-nm InP HEMTprocess. Packaged LNAs have been measured at both 300 and15 K. At 300 K, the measured minimum noise temperature ofthe 0.5–13-GHz LNA was 48 K at 7 GHz with a gain between34–40 dB. At 15 K, the measured minimum noise temperature was 3 K at 7 GHz and below 7 K within the entire 0.5–13-GHz band with a gain between 38–44 dB. The 24–40-GHz LNA exhibited a lowest noise temperature of 110 K and an average of 125 K with again of more than 27.5 dB at 300 K. When cooled down to 15 K,the noise temperature dropped to a minimum of 10 K and average of 13.2 K with a gain of 28 dB. The results are of large interest for radio astronomy applications where large bandwidth and low noise figure in the receivers are key figures in the system design.
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| 24. |
- Schleeh, Joel, 1986, et al.
(författare)
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Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
- 2012
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 33:5, s. 664-666
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Tidskriftsartikel (refereegranskat)abstract
- We present in this letter an InGaAs/InAlAs/InP high-electron-mobility transistor (InP HEMT) with record noise temperature at very low dc power dissipation. By minimizing parasitic contact and sheet resistances and the gate current, a 130-nm-gate-length InP HEMT was optimized for cryogenic low-noise operation. When integrated in a 4- to 8-GHz three-stage hybrid low-noise amplifier operating at 10 K, a noise temperature of 1.2 K +/- 1.3 K at 5.2 GHz was measured. The gain of the amplifier across the entire band was 44 dB, consuming only 4.2 mW of dc power. The extracted minimum noise temperature of the InP HEMT was 1 K at 6 GHz.
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| 25. |
- Wu, W.C., et al.
(författare)
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60 GHz broadband 0=1-level RF-via interconnect for RF-MEMS packaging
- 2007
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Ingår i: Electronics Letters. ; 43:22, Oct. 25
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Tidskriftsartikel (refereegranskat)abstract
- The RF-via interconnect structure from the 0- to the 1-level packagefor coplanar RF-MEMS devices packaging is evaluated. The 0=1-levelinterconnect structure was designed and optimised using the electromagneticsimulation tool. The structure was then successfully fabricatedand characterised up to 67 GHz. The measured and simulatedresults show good agreement, demonstrating DC-to-60 GHz broadbandinterconnect performance through the two levels package
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| 26. |
- Wu, W.-C., et al.
(författare)
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60 GHz Broadband MS-to-CPW Hot-Via Flip Chip Interconnects
- 2007
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Ingår i: Microwave and Wireless Components Letters, IEEE. ; 17:11, Nov. 2007, s. 784-786
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, the microstrip-to-coplanar waveguide(MS-to-CPW) hot-via flip chip interconnect has been experimentallydemonstrated to have broadband performance from dc to67 GHz. The interconnect structures with the hot-via transitions were first designed and optimized by using the electromagnetic simulation tool. Three types of designs were investigated in this letter. The interconnect structures were then fabricated and radio frequency (RF) tested up to 67 GHz. The optimized interconnectstructure with the compensation design demonstrated excellent RFcharacteristics with the insertion loss less than 0.5 dB and the returnloss below 18 dB over a very broad bandwidth from dc to67 GHz. This is to our
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| 27. |
- Wu, W. C., et al.
(författare)
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Coaxial transitions for CPW-to-CPW flip chip interconnects
- 2007
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Ingår i: Electronics Letters. ; 43:17, Aug. 16, s. 929-930
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Tidskriftsartikel (refereegranskat)abstract
- A novel coaxial transition for CPW-to-CPW flip chip interconnect ispresented and experimentally demonstrated. To realise the coaxialtransition on the CPW circuit, benzocyclobutene was used as theinterlayer dielectric between the vertical coaxial transition and theCPW circuit. The coaxial interconnect structure was successfullyfabricated and RF characterised to 67 GHz. The structure showedexcellent interconnect performance from DC up to 55 GHz with lowreturn loss below 20 dB and low insertion loss less
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| 28. |
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| 29. |
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