| 1. |
- Bruzzi, M, et al.
(författare)
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Radiation-hard semiconductor detectors for SuperLHC
- 2005
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - : Elsevier BV. - 0167-5087 .- 0168-9002. ; 541:1-2, s. 189-201
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Tidskriftsartikel (refereegranskat)abstract
- An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.
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| 2. |
- Carlsson, FHC, et al.
(författare)
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Neutron irradiation of 4H SiC
- 2001
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS. - 0255-5476. ; 353, s. 555-558
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Tidskriftsartikel (refereegranskat)
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| 3. |
- Forsberg, U., et al.
(författare)
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Growth and characterisation of 4H-SiC MESFET structures grown by hot-wall CVD
- 2001
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Ingår i: Materials Research Society Symposium - Proceedings. - Boston, MA. ; , s. H2.3.1-H2.3.6
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Konferensbidrag (refereegranskat)abstract
- Metal semiconductor field effect transistor, MESFET, structures have been grown in a hot-wall CVD reactor. Using trimethylaluminium and nitrogen as dopant sources, p- and n-type epitaxial layers were grown on semi insulating substrates. A comprehensive characterization study of thickness and doping of these structures has been performed by using scanning electron microscopy, secondary ion mass spectrometry, capacitance-voltage measurements. Each technique is discussed concerning its advantage and disadvantage. Some transistor properties of MESFETs processed on the grown material are presented.
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| 4. |
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| 5. |
- Storasta, L, et al.
(författare)
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Correlation between electrical and optical mapping of boron related complexes in 4H-SiC
- 2002
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS - 2002. ; , s. 423-426
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Konferensbidrag (refereegranskat)abstract
- Boron related photoluminescence (PL) and capacitance transient spectroscopy (DLTS and MCTS) peaks have been investigated around SIMS craters. Enhancement of boron and hydrogen related PL was observed in the vicinity of the crater, whereas the concentration of electrically active boron as measured by MCTS has decreased considerably. Comparison of the boron MCTS peak behavior after electron and proton irradiation is presented. Possible defect models based on the obtained results are discussed.
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