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- Nishimaki, M., et al.
(författare)
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Effects of different periods of rapid weight loss on dehydration and oxidative stress
- 2018
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Ingår i: Archives of Budo. - 1643-8698. ; 14, s. 319-327
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Tidskriftsartikel (refereegranskat)abstract
- Background and Study Aim: Many athletes will lose weight 5% or more within 7 days. Many reports have been published on the negative health effects of rapid weight loss (RWL) in wrestlers. This study aim was the effects of different periods of RWL on dehydration state and oxidative stress. Materials and Methods: Participants were nine male collegiate wrestlers who reduce their body mass by 5% within short period in randomized order using the same methods. They have experienced 1-day, 3-days and 7-days) weight loss separated by more than 4 weeks. All participants reduced 5% of their body mass in all trials. Following the weight loss, they tried to regain all of their lost weight with an ad libitum diet for 14 h. Body composition and biochemical variables were measured at baseline and immediately after weight loss and weight regain. Results: There were no statistically significant differences in hematocrit, serum sodium, chloride, potassium, calcium, osmotic pressure, and antidiuretic hormone. For plasma aldosterone concentrations and plasma d-ROMs concentrations, two-way analysis of variance revealed the main effect of time (p<0.05). RWL (loss of 5% of body weight within 7 days) is surmised to have increased oxidative stress via dehydration and elevated levels of aldosterone. Conclusions: Although different weight loss periods did not yield any changes, RWL of 5% of body weight was suggested to increase oxidative stress. It is necessary to study the influence of weight loss cycling on athlete's disease risk in the future.
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- Araujo, C. M., et al.
(författare)
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Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN : Si
- 2002
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Ingår i: Microelectronics Journal. - 0026-2692. ; 33:4, s. 365-369
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Tidskriftsartikel (refereegranskat)abstract
- The electrical resistivity of the Si-donor cubic GaN is investigated theoretically at low temperature. The critical impurity concentration, N-c, for the metal-nonmetal transition is estimated in three different ways: from using the generalized Drude approach (GDA) for the resistivity; from the vanishing of the chemical potential calculated using the dielectric function model with a Lorentz-Lorenz correction; from finding the crossing point between the energy in the insulating and metallic states. The bandgap narrowing (BGN) has been determined theoretically and experimentally above the MNM transition, The experimental data have been obtained with photoluminescence measurements. Theoretical and experimental results are in rough agreement in the range of impurity concentration of interest.
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- Fernandez, J. R. L., et al.
(författare)
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Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
- 2001
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Ingår i: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 231:3, s. 420-427
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Tidskriftsartikel (refereegranskat)abstract
- The critical impurity concentration N-c of the metal-nonmetal (MNM) transition for the cubic GaN, InN and AIN systems. is calculated using the following two different criteria: vanishing of the donor binding energy and the crossing point between the energies in the metallic and insulating phases. A dielectric function model with a Lorentz-Lorenz correction is used for the insulating phase. The InN presents an order of magnitude increase in N-c as compared to the other two systems. The electrical resistivity of the Si-donor system GaN is investigated theoretically and experimentally from room temperature down to 10K. It presents a metallic character above a certain high impurity concentration identified as N-c. The samples were grown by plasma assisted molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. The model calculation is carried out from a recently proposed generalized Drude approach (GDA) presenting a very good estimation for the metallic region. The band-gap shift (BGS) of Si-doped GaN has also been investigated above the MNM transition where this shift is observed. Theoretical and experimental results have a rough agreement in a range of impurity concentration of interest.
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- Lin, Xue, et al.
(författare)
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Controlled release of matrix metalloproteinase-1 plasmid DNA prevents left ventricular remodeling in chronic myocardial infarction of rats.
- 2009
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Ingår i: Circulation journal : official journal of the Japanese Circulation Society. - 1347-4820. ; 73:12, s. 2315-21
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Tidskriftsartikel (refereegranskat)abstract
- BACKGROUND: The present study investigated whether administration of controlled release matrix metalloproteinase-1 (MMP-1) plasmid DNA prevents left ventricular (LV) remodeling in a rat chronic myocardial infarction (MI) model. METHODS AND RESULTS: Rats with a moderate-sized MI were randomized to 2 groups: injection of phosphate buffered saline (PBS) containing microspheres into the peri-infarct area (MI group, n=14) and injection of cationized gelatin microspheres incorporating MMP-1 plasmid DNA (MI+MMP-1 group, 50 microg MMP-1/20 microl; n=14). As a control group (n=14), rats received neither the coronary artery ligation nor the injection of PBS. Echocardiography, cardiac catheterization and histological studies were performed. At 2 and 4 weeks after the treatment, the MI+MMP-1 group had smaller LV end-diastolic and end-systolic dimensions, better fractional area change and smaller akinetic areas than the MI group. The LV end-systolic elastance and time constant of isovolumic relaxation were also better in the MI+MMP-1 group compared with the MI group 4 weeks after the treatment. Fibrosis evaluated with Masson's trichrome staining was less in the MI+MMP-1 group than the MI group. CONCLUSIONS: Gelatin microspheres for the controlled release of MMP-1 plasmid DNA are promising for improving cardiac remodeling and function when they are administered during the chronic phase of MI.
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