| 1. |
- Carvahlo, A., et al.
(författare)
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Cation-site intrinsic defects in Zn-doped CdTe
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 81:7, s. 75215-
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Tidskriftsartikel (refereegranskat)abstract
- The properties of the cation vacancy and the Te antisite, two dominant defects in CdTe and Cd1-xZnxTe alloys grown in Te-rich conditions, are examined using first-principles calculations. First, the structure, electronic levels, and migration paths of V-Cd and Te-Cd in CdTe are studied in detail. Additionally, we analyze the evolution of the stability and electronic properties in Cd1-xZnxTe alloys, taking into account both the role of alloying in the position of the ionization levels and its effects on the equilibrium concentration of those two defects. It is shown that the formation of cation vacancies becomes progressively more favorable as x increases, whereas Te antisites become less stable, backing the trend towards p-type conductivity in dilute Cd1-xZnxTe.
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| 2. |
- Carvalho, A., et al.
(författare)
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Intrinsic defects in CdTe and CdZnTe alloys
- 2009
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Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 404:23-24, s. 5019-5021
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Tidskriftsartikel (refereegranskat)abstract
- The Cd vacancy (VCd) and Te anti-site (TeCd) are two dominant defects in CdTe and CdZnTe alloys grown in Terich conditions. We examine the properties of these two intrinsic defects in Cd1-xZnxTe alloys with x < 0:5 using first-principles calculations. It is shown that Cd vacancies become progressively more favourable with increasing Zn content, in contrast with Te anti-sites, which show the opposite behaviour, explaining the trend towards p-type conductivity in Cd1-xZnxTe.
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