| 1. |
- Wang, F., et al.
(författare)
-
Silicon intercalation into the graphene-SiC interface
- 2012
-
Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 85:16
-
Tidskriftsartikel (refereegranskat)abstract
- In this work we use low-energy electron microscopy, x-ray photoemission electron microscopy, and x-ray photoelectron spectroscopy to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000 (1) over bar) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020 degrees C. In a sequence of depositions, we have been able to intercalate similar to 6 ML of Si into the graphene-SiC interface.
|
|
| 2. |
- Ndiaye, W., et al.
(författare)
-
Bulk electronic structure of Mn5Ge3/Ge(111) films by angle-resolved photoemission spectroscopy
- 2013
-
Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 87:16
-
Tidskriftsartikel (refereegranskat)abstract
- Mn5Ge3(001) thin films grown on Ge(111)-c(2 x 8) reconstructed surfaces were studied by angle-resolved photoemission using synchrotron radiation in the 14-94 eV photon energy range. The results obtained in the Gamma ALM plane and in the Gamma AHK plane are in agreement with simulations starting with band structure calculations based on the density functional theory. This provides a unique validation of band structure calculations for a proper description of the electronic properties of Mn5Ge3. Only the spectral feature very close to the Fermi level cannot be well explained by the simulation. This departure is discussed in terms of the three-dimensional nature of the sample and of correlation effects.
|
|
| 3. |
- Ndiaye, W., et al.
(författare)
-
k dependence of the spin polarization in Mn5Ge3/Ge(111) thin films
- 2015
-
Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 91:12
-
Tidskriftsartikel (refereegranskat)abstract
- Mn5Ge3(001) thin films grown on Ge(111) were studied by angle-and spin-resolved photoemission using synchrotron radiation in the 17-40 eV photon energy range. The photoelectron spectra were simulated starting from a first-principles band-structure calculation for the ground state, using the free-electron approximation for the final states, taking into account photohole lifetime effects and k(perpendicular to) broadening plus correlation effects, but ignoring transition matrix elements. The measured spin polarizations for the various k points investigated in the Gamma MLA plane of the Brillouin zone are found to be in fair enough agreement with the simulated ones, providing a strong support to the ground-state band-structure calculations. Possible origins for the departures between either simulations and experiments or previous and present experiments are discussed.
|
|
| 4. |
- Richter, M. C., et al.
(författare)
-
NiFe2O4 and Fe3O4 studied by XMCD and resonant photoemission
- 2009
-
Ingår i: The European Physical Journal. Special Topics. - : Springer Science and Business Media LLC. - 1951-6355 .- 1951-6401. ; 169, s. 175-180
-
Tidskriftsartikel (refereegranskat)abstract
- X-ray magnetic circular dichroism and resonant photoemission at the Fe and Ni L-2,L-3 edges have been used to investigate the electronic structure of NiFe2O4 (NFO) thin films. The results, when compared to those obtained on Fe3O4, indicate that in a 12 nm NFO film the Ni atoms occupy mainly B sites, as in bulk NFO, and that a decrease in the thickness of the film results in a modi. cation of the nickel hybridization.
|
|
