| 1. |
- Reifarth, R., et al.
(författare)
-
Nuclear astrophysics with radioactive ions at FAIR
- 2016
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Ingår i: Journal of Physics: Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 665:1
-
Konferensbidrag (refereegranskat)abstract
- The nucleosynthesis of elements beyond iron is dominated by neutron captures in the s and r processes. However, 32 stable, proton-rich isotopes cannot be formed during those processes, because they are shielded from the s-process flow and r-process beta-decay chains. These nuclei are attributed to the p and rp process. For all those processes, current research in nuclear astrophysics addresses the need for more precise reaction data involving radioactive isotopes. Depending on the particular reaction, direct or inverse kinematics, forward or time-reversed direction are investigated to determine or at least to constrain the desired reaction cross sections. The Facility for Antiproton and Ion Research (FAIR) will offer unique, unprecedented opportunities to investigate many of the important reactions. The high yield of radioactive isotopes, even far away from the valley of stability, allows the investigation of isotopes involved in processes as exotic as the r or rp processes.
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| 2. |
- Akbari-Saatlu, Mehdi, et al.
(författare)
-
H2S gas sensing based on SnO2thin films deposited by ultrasonic spray pyrolysis on Al2O3substrate
- 2021
-
Ingår i: 2021 IEEE Sensors Applications Symposium (SAS). - 9781728194318
-
Konferensbidrag (refereegranskat)abstract
- H2S gas is harmful for human health and environment, therefore novel gas sensors for real time and fast detection with high precision have been sought. Metal oxides are already known as promising candidate for this purpose. This article presents the performance of a gas sensor consists of a microheater and active layer formed on single alumina substrate for operating at high temperature applications. Ultrasonic spray pyrolysis deposition method was used to make both thick layer of SnO2 for microheater and thin and porous crystalline layer of SnO2 as sensing layer. The prepared sensor showed suitable dynamic response towards 10 to 50 ppm of H2S gas both in humid and dry conditions at 450 °C. In these experiments, the cross sensitivity of the sensor was also checked for other interfering gases e.g. CH4 and NO2.
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| 3. |
- Akbari-Saatlu, Mehdi, et al.
(författare)
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Nanometer-Thick ZnO/SnO2Heterostructures Grown on Alumina for H2S Sensing
- 2022
-
Ingår i: ACS Applied Nano Materials. - : American Chemical Society (ACS). - 2574-0970. ; 5:5, s. 6954-6963
-
Tidskriftsartikel (refereegranskat)abstract
- Designing heterostructure materials at the nanoscale is a well-known method to enhance gas sensing performance. In this study, a mixed solution of zinc chloride and tin (II) chloride dihydrate, dissolved in ethanol solvent, was used as the initial precursor for depositing the sensing layer on alumina substrates using the ultrasonic spray pyrolysis (USP) method. Several ZnO/SnO2 heterostructures were grown by applying different ratios in the initial precursors. These heterostructures were used as active materials for the sensing of H2S gas molecules. The results revealed that an increase in the zinc chloride in the USP precursor alters the H2S sensitivity of the sensor. The optimal working temperature was found to be 450 °C. The sensor, containing 5:1 (ZnCl2: SnCl2·2H2O) ratio in the USP precursor, demonstrates a higher response than the pure SnO2 (∼95 times) sample and other heterostructures. Later, the selectivity of the ZnO/SnO2 heterostructures toward 5 ppm NO2, 200 ppm methanol, and 100 ppm of CH4, acetone, and ethanol was also examined. The gas sensing mechanism of the ZnO/SnO2 was analyzed and the remarkably enhanced gas-sensing performance was mainly attributed to the heterostructure formation between ZnO and SnO2. The synthesized materials were also analyzed by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray, transmission electron microscopy, and X-ray photoelectron spectra to investigate the material distribution, grain size, and material quality of ZnO/SnO2 heterostructures.
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| 4. |
- Akbari-Saatlu, Mehdi, et al.
(författare)
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Silicon Nanowires for Gas Sensing : A Review
- 2020
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Ingår i: Nanomaterials. - : MDPI AG. - 2079-4991. ; 10:11
-
Forskningsöversikt (refereegranskat)abstract
- The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have been made to study the gas sensing function of NWs. This review article presents the recent developments related to the applications of SiNWs for gas sensing. The content begins with the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have been discussed. Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. In the final words, the challenges and future opportunities of SiNWs for gas sensing have been discussed.
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| 5. |
- Ambatipudi, Radhika, 1982-
(författare)
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High Frequency (MHz) Planar Transformers for Next Generation Switch Mode Power Supplies
- 2013
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Increasing the power density of power electronic converters while reducing or maintaining the same cost, offers a higher potential to meet the current trend inrelation to various power electronic applications. High power density converters can be achieved by increasing the switching frequency, due to which the bulkiest parts, such as transformer, inductors and the capacitor's size in the convertercircuit can be drastically reduced. In this regard, highly integrated planar magnetics are considered as an effective approach compared to the conventional wire wound transformers in modern switch mode power supplies (SMPS). However, as the operating frequency of the transformers increase from several hundred kHz to MHz, numerous problems arise such as skin and proximity effects due to the induced eddy currents in the windings, leakage inductance and unbalanced magnetic flux distribution. In addition to this, the core losses whichare functional dependent on frequency gets elevated as the operating frequency increases. Therefore, this thesis provides an insight towards the problems related to the high frequency magnetics and proposes a solution with regards to different aspects in relation to designing high power density, energy efficient transformers.The first part of the thesis concentrates on the investigation of high power density and highly energy efficient coreless printed circuit board (PCB) step-down transformers useful for stringent height DC-DC converter applications, where the core losses are being completely eliminated. These transformers also maintain the advantages offered by existing core based transformers such as, high coupling coefficient, sufficient input impedance, high energy efficiency and wide frequencyband width with the assistance of a resonant technique. In this regard, several coreless PCB step down transformers of different turn’s ratio for power transfer applications have been designed and evaluated. The designed multilayered coreless PCB transformers for telecom and PoE applications of 8,15 and 30W show that the volume reduction of approximately 40 - 90% is possible when compared to its existing core based counterparts while maintaining the energy efficiency of the transformers in the range of 90 - 97%. The estimation of EMI emissions from the designed transformers for the given power transfer application proves that the amount of radiated EMI from a multilayered transformer is lessthan that of the two layered transformer because of the decreased radius for thesame amount of inductance.The design guidelines for the multilayered coreless PCB step-down transformer for the given power transfer application has been proposed. The designed transformer of 10mm radius has been characterized up to the power level of 50Wand possesses a record power density of 107W/cm3 with a peak energy efficiency of 96%. In addition to this, the design guidelines of the signal transformer fordriving the high side MOSFET in double ended converter topologies have been proposed. The measured power consumption of the high side gate drive circuitvitogether with the designed signal transformer is 0.37W. Both these signal andpower transformers have been successfully implemented in a resonant converter topology in the switching frequency range of 2.4 – 2.75MHz for the maximum load power of 34.5W resulting in the peak energy efficiency of converter as 86.5%.This thesis also investigates the indirect effect of the dielectric laminate on the magnetic field intensity and current density distribution in the planar power transformers with the assistance of finite element analysis (FEA). The significanceof the high frequency dielectric laminate compared to FR-4 laminate in terms of energy efficiency of planar power transformers in MHz frequency region is also explored.The investigations were also conducted on different winding strategies such as conventional solid winding and the parallel winding strategies, which play an important role in the design and development of a high frequency transformer and suggested a better choice in the case of transformers operating in the MHz frequency region.In the second part of the thesis, a novel planar power transformer with hybrid core structure has been designed and evaluated in the MHz frequency region. The design guidelines of the energy efficient high frequency planar power transformerfor the given power transfer application have been proposed. The designed corebased planar transformer has been characterized up to the power level of 50W and possess a power density of 47W/cm3 with maximum energy efficiency of 97%. This transformer has been evaluated successfully in the resonant converter topology within the switching frequency range of 3 – 4.5MHz. The peak energy efficiency ofthe converter is reported to be 92% and the converter has been tested for the maximum power level of 45W, which is suitable for consumer applications such as laptop adapters. In addition to this, a record power density transformer has been designed with a custom made pot core and has been characterized in thefrequency range of 1 - 10MHz. The power density of this custom core transformer operating at 6.78MHz frequency is 67W/cm3 and with the peak energy efficiency of 98%.In conclusion, the research in this dissertation proposed a solution for obtaining high power density converters by designing the highly integrated, high frequency(1 - 10MHz) coreless and core based planar magnetics with energy efficiencies inthe range of 92 - 97%. This solution together with the latest semiconductor GaN/SiC switching devices provides an excellent choice to meet the requirements of the next generation ultra flat low profile switch mode power supplies (SMPS).
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| 6. |
- An, Siwen, et al.
(författare)
-
Comparison of Elemental Analysis Techniques for Fly Ash from Municipal Solid Waste Incineration using X-rays and Electron Beams
- 2019
-
Ingår i: IOP Conference Series. - : Institute of Physics (IOP).
-
Konferensbidrag (refereegranskat)abstract
- With the rapid expansion of the waste incineration business both in Europe and globally, there is a growing need for the elemental analysis for fly ash from municipal solid waste incineration. In this work, samples of washed and unwashed ash from municipal solid waste incineration in Sundsvall are evaluated. Qualitative analysis and semi-quantitative analysis are used to compare two elemental analysis methods, scanning electron microscope with energy dispersive spectroscopy (SEM-EDS) and X-ray fluorescence (XRF) measurement. Both methods are used to retrieve the difference in elemental composition between washed and unwashed fly ash. SEM-EDS accurately detects light elements from well-prepared samples in a vacuum environment, while, for online measurements, XRF is a potential method that analyses hazardous metal content in the fly ash.
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| 7. |
- An, Siwen, et al.
(författare)
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Effects of Water Absorption on Mercury Contamination in Fiberbank Sediments using X-ray Fluorescence Spectrometer
- 2021
-
Ingår i: IOP Conference Series: Earth and Environmental Science. - : Institute of Physics (IOP). - 1755-1307 .- 1755-1315.
-
Konferensbidrag (refereegranskat)abstract
- A large amount of contaminated cellulose and wood fibers were emitted directly onto the seabed by the pulp and paper industry before the year of 1970. This fiber-rich sediment contains concentrations of hazardous substances that cause environmental problems. Mercury (Hg) in the fiber sediment is a worldwide threat because it can bioaccumulate in the aquatic ecosystem and eventually affect human health. X-ray fluorescence (XRF) analysis is anelemental analysis method for earth materials, which is rapid and requires minimal sample preparation. However, for in-situ XRF analyses, constraints in the measurement conditions will strongly affect the measurement sensitivity and accuracy, such as the scattered background and the water content surrounding the sample. In this work, we showed that applying an X-ray beam filter foil, optimized by using the material absorption edge, can improve the sensitivity of the XRF spectrometer system for Hg determination. Furthermore, the influence of water content in XRF measurement for Hg contamination analysis was investigated. The attenuation coefficient in water was determined by simulation of water layer with varying thickness using a Monte Carlo simulation code. The measured intensity for Hg was decreased exponentially asthe water thickness increase, as expected. We propose a method to correct the attenuation in water with XRF analysis and we expect that these findings can contribute to an accurate in-situ Hg detection experiment.
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| 8. |
- An, Siwen, et al.
(författare)
-
Full-field X-ray fluorescence imaging with a straight polycapillary X-ray collimator
- 2020
-
Ingår i: Journal of Instrumentation. - 1748-0221. ; 15:12
-
Tidskriftsartikel (refereegranskat)abstract
- Due to the availability of X-ray imaging detectors, full-field X-ray fluorescence (FF-XRF) imaging technique has become achievable, which provides an alternative to scanning X-ray fluorescence imaging with a micro-focus X-ray beamline. In this paper, we present a setup based on straight capillary optics and an energy-dispersive hybrid pixel detector, which can perform simultaneous mapping of several chemical elements. The photon transmission efficiency and spatial resolution are compared between two X-ray collimation setups: one using pinhole optics and one using straight polycapillary optics. There is a tradeoff between the spatial resolution and transmission efficiency when considering X-ray optics. When optimizing the spatial resolution, using straight capillary optics achieved a higher intensity gain when comparing with the pinhole setup. Characterization of the polycapillary imaging setup is performed through analyzing various samples in order to investigate the spatial frequency response and the energy sensitivity. This developed setup is capable of FF-XRF imaging in characteristic energies below 20 keV, while for higher energies the spatial resolution is affected by photon transmission through the collimator. This work shows the potential of the FF-XRF instrument in the monitoring of toxic metal distributions in environmental mapping measurements.
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| 9. |
- An, Siwen, et al.
(författare)
-
Geometrical influence on Hg determination in wet sediment using K-shell fluorescence analysis
- 2023
-
Ingår i: X-Ray Spectrometry. - : John Wiley and Sons Ltd. - 0049-8246 .- 1097-4539. ; 52:4, s. 82-196
-
Tidskriftsartikel (refereegranskat)abstract
- To quickly identify maritime sites polluted by heavy metal contaminants, reductions in the size of instrumentation have made it possible to bring an X-ray fluorescence (XRF) analyzer into the field and in direct contact with various samples. The choice of source-sample-detector geometry plays an important role in minimizing the Compton scattering noise and achieving a better signal-to-noise ratio (SNR) in XRF measurement conditions, especially for analysis of wet sediments. This paper presents the influence of geometrical factors on a prototype, designed for in situ XRF analysis of mercury (Hg) in wet sediments using a 57Co excitation source and an X-ray spectrometer. The unique XRF penetrometer prototype has been constructed and tested for maritime wet sediment. The influence on detection efficiency and SNR of various geometrical arrangements have been investigated using the combination of Monte Carlo simulations and laboratory experiments. Instrument calibration was performed for Hg analysis by means of prepared wet sediments with the XRF prototype. The presented results show that it is possible to detect Hg by K-shell emission, thus enabling XRF analysis for underwater sediments. Consequently, the XRF prototype has the potential to be applied as an environmental screening tool for analysis of polluted sediments with relatively high concentrations (e.g., >2880 ppm for Hg), which would benefit in situ monitoring of maritime pollution caused by heavy metals. © 2022 The Authors
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| 10. |
- An, Siwen, et al.
(författare)
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Signal-to-Noise Ratio Optimization in X-ray Fluorescence Spectrometry for Chromium Contamination Analysis
- 2021
-
Ingår i: Talanta. - : Elsevier BV. - 0039-9140 .- 1873-3573. ; 230
-
Tidskriftsartikel (refereegranskat)abstract
- In most cases, direct X-ray fluorescence (XRF) analysis of solutions entails technical difficulties due to a high X-ray scattering background resulting in a spectrum with a poor signal-to-noise ratio (SNR). Key factors that determine the sensitivity of the method are the energy resolution of the detector and the amount of scattered radiation in the energy range of interest. Limiting the width of the primary spectrum by the use of secondary targets, or filters, can greatly improve the sensitivity for specific portions of the spectrum. This paper demonstrates a potential method for SNR optimization in direct XRF analysis of chromium (Cr) contamination. The suggested method requires minimal sample preparation and achieves higher sensitivity compared to existing direct XRF analysis. Two states of samples, fly ash and leachate from municipal solid waste incineration, were investigated. The effects of filter material, its absorption edge and filter thickness were analyzed using the combination of Monte Carlo N-Particle (MCNP) code and energy-dispersive XRF spectrometry. The applied filter removes primary photons with energies interfering with fluorescence photons from the element of interest, thus results in lower background scattering in the spectrum. The SNR of Cr peak increases with filter thickness and reaches a saturation value when further increased thickness only increases the measurement time. Measurements and simulations show that a Cu filter with a thickness between 100 μm and 140 μm is optimal for detecting Cr by taking into account both the SNR and the exposure time. With direct XRF analysis for solutions, the limit of quantitation (LOQ) of the achieved system was 0.32 mg/L for Cr, which is well below the allowed standard limitation for landfills in Sweden. This work shows that XRF can gain enough sensitivity for direct monitoring to certify that the Cr content in leachate is below environmental limits.
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| 11. |
- An, Siwen
(författare)
-
Spectroscopic and Microscopic X-ray Fluorescence Analysis for Environmental and Industrial Applications
- 2022
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Heavy metals are well-known environmental pollutants due to its potential impact on associated ecosystems and human health. Thus, it is important to monitor the levels of heavy metals in the environment. X-ray fluorescence (XRF) analysis is a powerful and effective screening tool in measuring the concentration of multi-elements simultaneously.This thesis provides insight into development and implementation of XRF instruments for environmental monitoring and industrial process control. The XRF method was compared with a commercial scanning electron microscope with energy dispersive spectroscopy (SEM-EDS) for fly ash samples. Qualitative analysis and semi-quantitative analysis of Na, S, Cl, K and Cd in incineration fly ash were performed with these two similar techniques. One of the challenges of using XRF is the scattering background noise from the primary beam, which decreases the detection limit and the sensitivity of the measurement system. Hence, an X-ray beam filter was chosen to suppress the background noise for a specific element, Cr, in leachate. Numerical simulations and experiments were developed to find the proper filter material and thickness by calculating the X-ray fluorescence intensities and the signal-to-noise ratio. The developed system is capable of online monitoring of Cr levels, to certify that the concentration is below the threshold level in leachate. An XRF prototype was built and calibrated for underwater Hg analysis in maritime wet sediment using a radioisotope source. The presented results show that it is possible to detect Hg by K-shell emission thus enabling XRF analysis for sediment underwater.For non-homogeneous samples, an image revealing the elemental distribution can be achieved by micro-XRF (µ-XRF). XRF mapping of element distributions on a microscopic level was obtained by using scanning XRF microscopy and full-field XRF projection microscopy (FF-XRF). The spatial resolution of the scanning XRF imaging setup using an X-ray tube is in the order of 100 µm, but need to be further improved to measure the homogeneity of S on individual fiber level in pulp and paper industry. For the scanning technique, it is a tradeoff between resolution and measurement time. Another technique is FF-XRF imaging, and a setup was implemented using an energy resolving pixel detector and X-ray optics. The capabilities and limitations of using X-ray optics in XRF imaging systems have been identified. These microscopy measurements can guide further comprehensive environmental and industrial monitoring missions, utilizing elemental distribution information.
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| 12. |
- An, Siwen
(författare)
-
X-ray Fluorescence Spectrometry for Environmental Applications
- 2020
-
Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Heavy metal contamination in environmental applications is particularly important because of its potential impact on associated ecosystems and human health. At present, monitoring of heavy metals is usually done by taking and preparing samples for off-line laboratory measurements. X-ray fluorescence (XRF) analysis is a powerful and widely used tool for determining the elemental composition and concentration of chemical species in materials. This project is a feasibility study for the possibility of on-line XRF systems for continuousand direct analysis of industrial processes and environmental emissions.The feasibility of such measurements depends on the accuracy with which the concentration can be measured within a given response time. Therefore, this project is focused on investigating possible background suppression of the XRF spectrum. First, an XRF setup has been built, and its capability has been compared to a commercial scanning electron microscope with energy dispersive spectroscopy (SEM-EDS). The qualitative analysis and semi-quantitative analysis of heavy metal contamination in fly ash was performed and compared. Due to minimal sample preparation, the developed XRF system is suitable for in-situ measurements. A series of experiments was performed to optimize the signal-to-noise ratio of the spectra achieved from chromium contaminated liquid samples. The most significant factor turned out to be the primary X-ray source filter. Numerical simulation models have been developed in the Monte Carlo N-particle radiation transport code (MCNP), to calculate the X-ray fluorescence intensities and the detection limit for chromium in liquid samples. The experimental results agree with the results predicted by the simulation model, hence the model is used for optimization of the XRF system. Further, XRF mapping of chemical element distributions on a microscopic level has been obtained by using both X-ray scanning microscopy and full-field projection microscopy. The resultingdata from these microscopy measurements can guide further comprehensive environmental and industrial monitoring missions by providing additional spatial distribution information.In conclusion, the first research contribution presented in this thesis is the demonstration of the possibility to perform in-situ XRF measurements of chromium contamination in leachate with a limit of detection below the legal environmental limits. The second is the demonstration of XRF mapping on amicroscopy level, where a polycapillary X-ray optics setup achieves a similar intensity as a geometrically corresponding pinhole optics setup.
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| 13. |
- Andersson, Henrik, 1975-, et al.
(författare)
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Analysis and improvement of the position nonlinearity caused by a residual stress in MOS-type position-sensitive detectors with indium tin oxide gate contact
- 2008
-
Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 23:7, s. 1-10
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, lateral effect position-sensitive detectors based on the MOS principle have been fabricated in lengths of 15 mm, 45 mm and 60 mm. The gate contact covering the active area consists of indium tin oxide which is a degenerate semiconductor transparent in the visible spectral range. Characterization and analysis have both been performed especially withparticular focus on the nonlinearity believed to be caused by stray stress induced in the inversion channel originating in the indium tin oxide gate contact. Stress in the channel will change the resistance in a non-uniform manner because of the piezoresistance effect, thus causing a nonlinearity in the position determination. It has been shown that the heat treatmentgreatly influences the linearity of the position-sensitive detectors. A heat treatment performed correctly results in 60 mm and 15 mm detectors with nonlinearity within ±0.1% and 45 mm detectors with nonlinearity within ±0.15% over 60% of the active length. This is an improvement over the previous results with this type of MOS position-sensitive detector. By performing a correctly timed heat treatment this PSD type has the potential to be used incommon position-sensing applications.
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| 14. |
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| 15. |
- Andersson, Henrik
(författare)
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Development of Process Technology for Photon Radiation Measurement Applications
- 2007
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Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- This thesis presents work related to new types of photo detectors and their applications. The focus has been on the development of process technology and methods by means of experimentation and measurements. The overall aim has been to develop and improve photon radiation measurement applications which are possible to manufacture using standard Si processing technology. A new type of position sensitive detector that has switching possibilities based on the MOS principle has been fabricated and characterized. The influence of mechanical stress on the linearity of position sensitive detectors has been investigated. The results show that mechanical stress arising, for example, by the mounting of detectors in capsules can have an impact on device performance. Under normal circumstances these effects are rather small, but are considered to be worthwhile taking into account. Electroless deposition of Nickel including various dopants in porous silicon was performed to manufacture electrical contacts for this interesting material. After heat treatment it was confirmed by X-ray diffraction that Nickel silicide had been formed and I-V measurements show that different contacts exhibit Ohmic and rectifying behaviour. Spectrometers are used extensively in the process and food industry to measure both the chemical content and the amount of substances used during manufacturing. These instruments are often rather bulky and costly, though the trend is towards smaller and more portable equipment. A spectrometer based on an array of Fabry-Perot interferometers mounted close to an array detector is shown to be a viable option for the manufacture of a very compact device. Such a device has minimal intermediate optics and it may be possible, in the future, for it to be developed and completely integrated with a detector array into a single unit.
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| 16. |
- Andersson, Henrik, et al.
(författare)
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Electroless deposition and silicidation of Ni contacts into p-type Porous Silicon
- 2008
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Ingår i: Journal of porous materials. - : Springer Science and Business Media LLC. - 1380-2224 .- 1573-4854. ; 15:3, s. 335-341
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Tidskriftsartikel (refereegranskat)abstract
- Porous Silicon (PS) has attracted much attention since the discovery of its photo luminescent behavior. It has also been used for various other applications such as electroluminescent light emitting-diodes (LEDs), photodetectors and solar cells. For such devices, it is important to make good metallic Ohmic contacts to the PS in order to maximize the efficiency. In order to produce buried contacts, barrier layers, Schottky devices, etc. in PS, it is advantageous to deposit metal that covers not only the surface of the porous layer, but also the inside walls and the bottom of the pores. In this work experiments were performed to examine the morphology and properties of electroless deposition of Nickel into p-type PS and subsequent formation of Nickel silicide after heat treatment. Circular PS samples of 6 mm diameter were produced by anodizing p-type Silicon wafers for 15 min and were subsequently plated with Ni using three different plating baths. The pores are on average 20 µm deep and 4 µm wide. Two samples of each type were heat treated in an nitrogen atmosphere for one hour at 400 and 600°C respectively to produce Nickel silicide. Reference samples were made by means of electron beam evaporation of Ni. SEM micrographs show that the best pore coverage was achieved using the Ni plating bath containing hypophosphite. I–V characterization shows that different rectifying and Ohmic contacts can be formed between electroless deposited Ni and PS depending on the conditions of the heat treatment. XRD and EDX characterizations show that both the NiSi and Ni2Si phases exist in the sample at the same time.
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| 17. |
- Andersson, Henrik, et al.
(författare)
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Evaluation of an Integrated Fourier-Transform Spectrometer Utilizing a Lateral Effect Position Sensitive Detector with a Multi-Channel Fabry-Perot Interferometer
- 2008
-
Ingår i: Measurement science and technology. - : IOP Publishing. - 0957-0233 .- 1361-6501. ; 19:4, s. 045306-
-
Tidskriftsartikel (refereegranskat)abstract
- The basis of this paper is the evaluation of an integrated multi-channel Fourier-transform (FT) spectrometer based on a multi-channel wedge Fabry-Perot interferometer and a one-dimensional lateral effect position sensitive detector (PSD). The use of a PSD for an interferogram readout allows for a simple scanning mechanism with no requirement for any position reference. The use of a wedge-shaped interferometer makes it possible to integrate it directly onto the PSD surface, thus producing a very compact spectrometer. The capabilities of the spectrometer are demonstrated by absorption spectral measurements using a reference sample. In addition, spectral measurements on 532 nm DPSS and 632.8 nm He-Ne lasers are presented. The resolution of the spectrometer is approximately 5 nm. The evaluated spectrometer set-up can be used in applications where compact and low cost spectrometers are required, such as in process control and in education. Further, it is shown that there are deteriorations in very high accuracy position measurements, which are caused by changes in incident light intensity. A model describing the above-mentioned nonlinearities was developed based on analysing the equivalent circuit for PSDs and parameters such as leakage current and serial resistance. Additionally, a method is proposed to assist in the reduction of the nonlinearity caused by this effect.
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| 18. |
- Andersson, Henrik, Dr, 1975-, et al.
(författare)
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PEDOT : PSS thermoelectric generators printed on paper substrates
- 2019
-
Ingår i: Journal of Low Power Electronics and Applications. - : MDPI AG. - 2079-9268. ; 9:2
-
Tidskriftsartikel (refereegranskat)abstract
- Flexible electronics is a field gathering a growing interest among researchers and companies with widely varying applications, such as organic light emitting diodes, transistors as well as many different sensors. If the circuit should be portable or off-grid, the power sources available are batteries, supercapacitors or some type of power generator. Thermoelectric generators produce electrical energy by the diffusion of charge carriers in response to heat flux caused by a temperature gradient between junctions of dissimilar materials. As wearables, flexible electronics and intelligent packaging applications increase, there is a need for low-cost, recyclable and printable power sources. For such applications, printed thermoelectric generators (TEGs) are an interesting power source, which can also be combined with printable energy storage, such as supercapacitors. Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate), or PEDOT:PSS, is a conductive polymer that has gathered interest as a thermoelectric material. Plastic substrates are commonly used for printed electronics, but an interesting and emerging alternative is to use paper. In this article, a printed thermoelectric generator consisting of PEDOT:PSS and silver inks was printed on two common types of paper substrates, which could be used to power electronic circuits on paper.
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| 19. |
- Andersson, Henrik, 1975-
(författare)
-
Position Sensitive Detectors : Device Technology and Applications in Spectroscopy
- 2008
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- This thesis deals with the development, processing and characterization of position sensitive detectors and, in addition, to the development of compact and cost effective spectrometers. Position sensitive detectors are used to measure, with great accuracy and speed, the position of a light spot incident on the surface. Their main use is for triangulation, displacement and vibration measurements. A type of position sensitive detector based on the MOS principle and using optically transparent indium tin oxide as a gate contact has been developed. This type of detector utilizes the MOS principle where an induced channel forms beneath the gate oxide in the surface of the Silicon substrate. One and two dimensional detectors have both been fabricated and characterized. The first measurements showed that the linearity did not fulfil expectations and it was suspected that stress induced by the gate contact could be the reason for the seemingly high nonlinearity. Further investigations into both the p-n junction and the MOS type position sensitive detectors lead to the conclusion that the indium tin oxide gate is responsible for inducing a substantial stress in the surface of the detector, thus giving rise to increased position nonlinearity. The heat treatment step which was conducted was determined to be critical as either a too short or too long heat treatment resulted in stress in the gate and channel leading to position nonlinearity. If a correctly timed heat treatment is performed then the detector’s linearity is in parity with the best commercial position sensitive detectors. In addition, the development of very small, compact and cost effective spectrometers has been performed with the aim of constructing devices for use in the process industry. The development of a wedge shaped array of Fabry-Perot interferometers that can be mounted directly on top of a detector makes it possible to construct a very compact spectrometer using the minimum amount of optics. This wedge interferometer has been evaluated by means of array pixel detectors and position sensitive detectors for both the infrared and the visible wavelength ranges. When used with a position sensitive detector it is necessary to use a slit to record the intensity of the interferogram for many points over the detector, equivalent to pixels on an array detector. Usually the use of moving parts in a spectrometer will impose the use of high precision scanning mechanisms and calibration. By using a position sensitive detector for the interferogram readout both the position and the intensity are known for every measurement point and thus the demands placed on the scanning system are minimized.
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| 20. |
- Andersson, Henrik, et al.
(författare)
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Principle of FT Spectrometer based on a Lateral Effect Position Sensitive Detector and Multi Channel Fabry-Perot Interferometer
- 2009
-
Ingår i: Measurement. - : Elsevier BV. - 0263-2241 .- 1873-412X. ; 42:5, s. 668-671
-
Tidskriftsartikel (refereegranskat)abstract
- The principle of a new type of multi channel Fourier-Transform spectrometer based on a multi channel wedge Fabry-Perot interferometer using a one dimensional lateral effect Position Sensitive Detector and a scanning slit for interferogram readout have been shown. The design of this spectrometer is very compact and the readout electronics very simple. The drawback of using a scanning slit system is minimized by the use of a position sensitive detector where the position is inherently known for each measurement. Experiments show that the position can be resolved with high accuracy and the summation of the two photocurrents gives the interferogram after scanning the slit between the wedge interferometer and the position sensitive detector. The spectral resolution obtained with a 25mm wedge interferometer together with a 45mm position sensitive detector and a 25µm slit is about 5nm around 600nm wavelength range, which is close to the theoretically anticipated resolution. The evaluated spectrometer setup show promising results and could be used in applications where compact and low cost spectrometers are required.
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| 21. |
- Andersson, Henrik, et al.
(författare)
-
Processing and Characterization of a MOS Type Tetra Lateral Position Sensitive Detector with Indium Tin Oxide Gate Contact
- 2008
-
Ingår i: IEEE Sensors Journal. - 1530-437X .- 1558-1748. ; 8:9-10, s. 1704-1709
-
Tidskriftsartikel (refereegranskat)abstract
- A 2-D tetra lateral position sensitive detector (PSD) based on the metal-oxide-semiconductor (MOS) principle has been manufactured and characterized. The active area of the device is 5 nun x 5 mm and the intention is to use the central 4 nun x 4 nun for low nonlinearity measurements. The gate contact is made of indium tin oxide (ITO) that is a degenerate electrically conducting semiconductor, which, in addition, is also transparent in the visible part of the spectrum. The use of a MOS structure results in a processing with no necessity to use implantation or diffusion in order to make the resistive p-layer as in a conventional p-n junction lateral effect PSD. Position measurements show good linearity in the middle 4 nun x 4 mm area. Within the middle 2.1 mm x 2.1 mm, the nonlinearity is within 1.7% of the active area with a position detection error of maximum 60 mu m. Measured MOS IV characteristics are compared to a level 3 spice model fit and show good agreement. The threshold voltage is determined to be -0.03 V. Responsivity measurements show a high sensitivity in the visible spectral region.
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| 22. |
- Andersson, Henrik, et al.
(författare)
-
Processing and characterization of a position sensitive lateral-effect metal oxide semiconductor detector
- 2004
-
Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - : ELSEVIER SCIENCE BV. - 0168-9002 .- 1872-9576. ; 531:1-2, s. 140-146
-
Tidskriftsartikel (refereegranskat)abstract
- Position sensingdetectors (PSDs) are useful in many applications, such as vibration, displacement, and triangulation measurements. In this paper we present a lateral-effect metal oxide semiconductor PSD with switchingcapability fabricated by our group. The detector can be switched off by the application of 0V on the substrate and 0.2V on the gate. A linear current-position behaviour is exhibited by the detector at a substrate bias of both 5 and 10V with the gate at 0V. There is no effect on the linearity when the substrate voltage is changed from 5 to 10V. The non-linearity is within 0.2% at a distance of 71.5mm from origin for 5, 10 and 15mm device length.
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| 23. |
- Andersson, Henrik, et al.
(författare)
-
The effect of mechanical stress on lateral-effect position sensitive detector characteristics
- 2006
-
Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - : Elsevier BV. - 0168-9002 .- 1872-9576. ; 563:1, s. 150-154
-
Tidskriftsartikel (refereegranskat)abstract
- Position-sensitive detectors (PSDs) are widely used in noncontact measurement systems. In order to minimize the size of such systems, interest has increased in mounting the PSD chip directly onto printed circuit boards (PCBs). Stress may be induced in the PSD because of the large differences in thermal expansion coefficients, as well as the long-term geometrical stability of the chip packaging. Mechanical stress has previously been shown to have an effect on the performance of semiconductors. The accuracy, or linearity, of a lateral effect PSD is largely dependent on the homogeneity of the resistive layer. Variations of the resistivity over the active area of the PSD will result in an uneven distribution of photo-generated current, and hence an error in the readout position. In this work experiments were performed to investigate the influence of anisotropic mechanical stress in terms of nonlinearity. PSD chips of 60×3 mm active area were subjected, respectively, to different amounts of compressive and tensile stress to determine the influence on the linearity.
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| 24. |
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| 25. |
- Ashraf, Shakeel, 1984-, et al.
(författare)
-
Design of a multilayered absorber structure based on SU-8 epoxy for broad and efficient absorption inMid-IR sensitive thermal detectors
- 2014
-
Ingår i: Proceedings. ; , s. 938-941
-
Konferensbidrag (refereegranskat)abstract
- This paper reports on design, simulation and fabrication of a multilayered interferometric absorption structure with a broad absorption in the mid-infrared band. This region is used for IR based CH4 and CO2 detection. The structure consists of five layers of different thickness. The structure consists of one mirror layer of aluminium, two SU-8 epoxy layers and two thin titanium layers. This structure has been fabricated on a silicon substrate and verified for its absorption properties through Fourier transform infrared spectroscopy. The fabricated structure has been compared with simulations are performed using transfer matrix theory. The structure shows more than 90% absorption in the wavelength range of 3.20μm - 5.35μm for simulations and 3.13μm - 5.47μm for FT-IR measurements. The transmission and reflection of SU-8 epoxy was measured using FT-IR (that), resulting in a calculated absorption between 10 - 20% in the area of interest (3μm - 6μm). The use of SU-8 epoxy as dielectric medium, allows for direct integration of the structure into the membrane of a SU-8 membrane based thermopile. The integration results in minimum increase of the thermal capacitance and conductance, which results in maximum detector sensitivity and minimum time constant.
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| 26. |
- Ashraf, Shakeel, 1984-, et al.
(författare)
-
Determination of complex refractive index of SU-8 by Kramers-Kronig dispersion relation method at the wavelength range 2.5 – 22.0 μm
- 2019
-
Ingår i: Journal of Quantitative Spectroscopy and Radiative Transfer. - : Elsevier BV. - 0022-4073 .- 1879-1352. ; 224, s. 309-311
-
Tidskriftsartikel (refereegranskat)abstract
- Accurate determination of the complex refractive index of SU-8 epoxy has significant for the wide variety of applications in optical sensor technology at IR range. The complex refractive index of SU-8 is determined by recording the transmission of light spectra for the wavelength range of 2.5 – 22.0 μm. The data analysis is based on the Kramers-Kronig dispersion relation method. The method has several merits, such as ease of operation, non-contact technique, measurement accuracy, and rapid measurement. The present method is not restricted to the case of SU-8 but it is also proposed to be applicable across a broad range of applications, such as assessment of the optical properties of paints and biomedical samples.
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| 27. |
- Ashraf, Shakeel, 1984-, et al.
(författare)
-
Evaluation of a CO2 sensitive thermopile with an integrated multilayered infrared absorber by using a long path length NDIR platform
- 2018
-
Ingår i: I2MTC 2018 - 2018 IEEE International Instrumentation and Measurement Technology Conference. - : IEEE. - 9781538622223 ; , s. 1-6
-
Konferensbidrag (refereegranskat)abstract
- In this work, a mid-infrared-sensitive thermopile detector was evaluated for carbon dioxide gas. The thermopile has an integrated absorber structure that has more than 95% absorption for the wavelength range of 3.3-5.5 μm. For the measurement of carbon dioxide, the detector was initially assembled on a small printed circuit board holder and then installed in a long path length non-dispersive infrared platform. The measurement setup was calibrated by exposing the detector to carbon dioxide of known concentrations (from 50 ppm to 1,300 ppm) and measuring the corresponding voltage response of the detector. The measured voltage values allowed us to calculate the calibration constant for this detector. This was followed by a verification process using a concentration of 500 ppm (which was not used in the calibration) and a known value of 1,300 ppm. The verification results matched with real values, demonstrating that the sensor can be used for highly sensitive and accurate carbon dioxide measurements at concentrations from a few ppm level up to 1,300 ppm. Above this level, additional calibration is needed.
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| 28. |
- Ashraf, Shakeel, 1984-, et al.
(författare)
-
Fabrication and characterization of a SU8-epoxy membrane based thermopile detector with an integrated multilayered absorber structure for the mid-IR region
- 2019
-
Ingår i: IEEE Sensors Journal. - 1530-437X .- 1558-1748. ; 19:11, s. 4000-4007
-
Tidskriftsartikel (refereegranskat)abstract
- This paper reports on the fabrication and characterization of a thermopile detector with an integrated mid-infrared absorber structure. The fabricated absorber structure has shown an absorption of more than 95% in the wavelength range of 3.2 – 5.47 μm. The detector was fabricated with standard cleanroom process techniques and equipment. The serial resistance was measured at about 315 kΩ at room temperature. The photosensitivity of the detector was characterized for a signle wavelength (4.26 µm) and a band of wavelength ranging from 2.5 –5.5 µm through two different measurement setups. In the first measurement setup, the photosensitivity was estimated at 57.5 V·mm2·W-1 through a MEMS-based infrared radiation source and with an optical band-pass filter of wavelength 4.26µm. The following characterization was performed to characterise the photosensitivity of the detector in a broader wavelength range. This measurement was taken using a monochromator setup utilizing a reference photodetector for calculations of the optical power of the infrared source. The photosensitivity and the specific detectivity (D*) of the fabricated detector were measured to values of 30-92 V·W-1 and 8.0×107-2.4×108 cm·Hz1/2·W-1, respectively, in the wavelength range of 2.8 – 5 µm. The time constant was estimated to around 21 ms
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| 29. |
- Ashraf, Shakeel, et al.
(författare)
-
Fabrication of a mid-Ir sensitive thermopile detector
- 2016
-
Ingår i: Proceedings of IEEE Sensors. - : IEEE. - 9781479982875
-
Konferensbidrag (refereegranskat)abstract
- This paper reports on the integration of a multilayered mid-infrared absorber structure into a SU-8 epoxy membrane-based thermopile detector. The absorber structure was designed and simulated using transfer matrix theory. The fabricated absorber structures were characterized through Fourier transform infrared spectroscopy. The structure shows an absorption of more than 95% in the wavelength range of 3.30pm–5pm for simulations, and 3.2pm–5.47pm for FTIR measurements. The complete fabrication process of a thermopile detector including the integration of a multilayered absorber structure has been presented. A MEMS based infrared emitter was used to characterize the fabricated detector. The serial resistance was measured to 315 kΩ and the responsivity was calculated to 57.5 Vmm2W−1 at a wavelength of 4.26pm. The time constant for the fabricated detector was estimated to around 21ms.
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| 30. |
- Ashraf, Shakeel, 1984-, et al.
(författare)
-
Integration of an interferometric IR absorber into an epoxy membrane based CO2 detector
- 2014
-
Ingår i: Journal of Instrumentation. - 1748-0221. ; 9:5, s. Art. no. C05035-
-
Tidskriftsartikel (refereegranskat)abstract
- Measurements of carbon dioxide levels in the environment are commonly performedby using non-dispersive infrared technology (NDIR). Thermopile detectors are often used in NDIRsystems because of their non-cooling advantages. The infrared absorber has a major influence onthe detector responsivity. In this paper, the fabrication of a SU-8 epoxy membrane based Al/Bithermopile detector and the integration of an interferometric infrared absorber structure of wavelength around 4 µ m into the detector is reported. The membrane of thermopile detector has beenutilized as a dielectric medium in an interferometric absorption structure. By doing so, a reduction in both thermal conductance and capacitance is achieved. In the fabrication of the thermopile,metal evaporation and lift off process had been used for the deposition of serially interconnectedAl/Bi thermocouples. Serial resistance of fabricated thermopile was measured as 220 kΩ. Theresponse of fabricated thermopile detector was measured using a visible to infrared source of radiation flux 3.23 mW mm−2. The radiation incident on the detector was limited using a band passfilter of wavelength 4.26 µ m in front of the detector. A responsivity of 27.86 V mm2W−1at roomtemperature was achieved using this setup. The fabricated detector was compared to a referencedetector with a broad band absorber. From the comparison it was concluded that the integratedinterferometric absorber is functioning correctly.
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| 31. |
- Ashraf, Shakeel, 1984-, et al.
(författare)
-
Surface modification of SU-8 for metal/SU-8 adhesion using RF plasma treatment for application in thermopile detectors
- 2015
-
Ingår i: Materials Research Express. - : Institute of Physics (IOP). - 2053-1591. ; 2:8
-
Tidskriftsartikel (refereegranskat)abstract
- This article reports on plasma treatment of SU-8 epoxy in order to enhance adhesive strength for metals. Its samples were fabricated on standard silicon wafers and treated with (O2 & Ar) RF plasma at a power of 25W at a low pressure of (3×10-3 torr) for different time spans (10 sec – 70 sec). The sample surfaces were characterized in terms of contact angle, surface (roughness and chemistry) and using a tape test. During the contact angle measurement, it was observed that the contact angle was reduced from 73° to 5° (almost wet) and 23° for (O2 & Ar) treated samples, respectively. The RMS surface roughness was significantly increased by 21.5% and 37.2% for (O2 & Ar) treatment, respectively. A pattern of metal squares was formed on the samples using photolithography for a tape test. An adhesive tape was applied to the samples and peeled off at 180o. The maximum adhesion results, more than 90%, were achieved for the O2-treated samples, whereas the Ar-treated samples showed no change. The XPS study shows the formation of new species in the O2-treated sample compared to the Ar-treated samples. The high adhesive results were due to the formation of hydrophilic groups and new O2 species in the O2-treated samples, which were absent in Ar-treated samples.
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| 32. |
- Ashraf, Shakeel, 1984-
(författare)
-
Thermal detector with integrated absorber structure for mid-IR gas detection
- 2018
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Measurement of the concentration of greenhouse gases, such as carbon dioxide(CO 2 ) and methane (CH 4 ), in the atmosphere has received significant attention in the last few decades. This work focusses on the development of high-performance thermopile detectors for use with the non-dispersive infrared (NDIR) measurements of such gases. The performance of the thermopile detectors could effectively be increased by selecting membrane materials with a low thermal conductivity value and an efficient infrared (IR) absorbing material and by selecting the materials with high Seebeck coefficient values. Graphite black paint can be used as a radiation absorber, as it has high absorption (80—93%) for a wide spectral range (2.5 μm — 20 μm). By using spray paint or a paint brush, the application of the absorber is simple and fast. However, the control over the processing process suffers with these simple methods. The thermal capacitance of the detector will rapidly increase due to uneven distribution and unknown thickness of the absorber, although the response of the thermopile detector will be maximum due to high absorption; however, the response time (τ th )for the detector will be longer.In order to improve the performance, IR absorbers have been designed to utilise the membrane (SU-8 epoxy) of the detector as an active part of the IR absorber. This utilisation of the SU-8 epoxy membrane will result in a maximum detector sensitivity and a minimum increase in both the thermal capacitance and thermal conductance of the thermopile detector. Absorber structures, based on SU-8 epoxy, with a narrow absorption band at 4.26 µm and a wider multi-layered absorption band at 3-6 µm, were designed, simulated, and fabricated, and their integration into the membrane of thermopile detectors have been presented. The response of the thermopile detector could also be increased by using materials with high Seebeck coefficient [1] values such as semiconductor materials, as they have higher Seebeckvalues compared to the metals. In the thesis, molybdenum disulfide (MoS 2 ) flakes were characterised, and Seebeck values were estimated through a measurement setup as a function of temperature difference (ΔT). The fabricated thermopile detectors were characterised, and the response time(τ th ) of a thermocouple with a multi-layered absorber structure has been estimated to be 21 ms. The detector has shown high responsivity value in the wavelength range of 3 µm – 4.5 µm, which is used for CO 2 and CH 4 detection. The thermopile detector was evaluated for CO 2 gas through a long-path-length NDIR platform. The results show that the evaluated thermopile could be used for the measurement of gas concentration down to levels of a few parts per million (ppm) by using the long-path-length NDIR platform.
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| 33. |
- Ashraf, Shakeel, 1984-, et al.
(författare)
-
Thermoelectric Properties of n-Type Molybdenum Disulfide (MoS2) Thin Film by Using a Simple Measurement Method
- 2019
-
Ingår i: Materials. - : MDPI. - 1996-1944. ; 12:21
-
Tidskriftsartikel (refereegranskat)abstract
- In this paper, a micrometre thin film of molybdenum disulfide (MoS2) is characterized for thermoelectric properties. The sample was prepared through mechanical exfoliation of a molybdenite crystal. The Seebeck coefficient measurement was performed by generating a temperature gradient across the sample and recording the induced electrical voltage, and for this purpose a simple measurement setup was developed. In the measurement, platinum was utilized as reference material in the electrodes. The Seebeck value of MoS2 was estimated to be approximately -600 mu V/K at a temperature difference of 40 degrees C. The negative sign indicates that the polarity of the material is n-type. For measurement of the thermal conductivity, the sample was sandwiched between the heat source and the heat sink, and a steady-state power of 1.42 W was provided while monitoring the temperature difference across the sample. Based on Fourier's law of conduction, the thermal conductivity of the sample was estimated to be approximately 0.26 Wm(-1) K-. The electrical resistivity was estimated to be 29 Omega cm. The figure of merit of MoS2 was estimated to be 1.99 x 10(-4).
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| 34. |
|
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| 35. |
- Bertilsson, Kent, et al.
(författare)
-
Simulation of a low atmospheric-noise modified four-quadrant position sensitive detector
- 2001
-
Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - 0168-9002 .- 1872-9576. ; 466:1, s. 183-187
-
Tidskriftsartikel (refereegranskat)abstract
- A modified four-quadrant position sensitive detector (PSD) is developed. This structure is less sensitive to atmospheric turbulence that is a major drawback with the traditional four-quadrant detector. The inter-electrode resistance is as high as for the four-quadrant detector, which is an advantage compared to the lateral effect PSD. The linearity for the modified four-quadrant detector is good in the whole active range of sensing. The structures are limited to small sensing areas with well focused beams and are suitable for use in detectors up to 1 mm in size.
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| 36. |
- Bocelli, S, et al.
(författare)
-
Experimental identification of the optical phonon of CoSi2 in the infrared
- 1995
-
Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 91:1-4, s. 30-33
-
Tidskriftsartikel (refereegranskat)abstract
- A weak but clear optical structure was detected at 329 cm−1 by both reflectance and transmittance measurements in the far infrared on a 430 Å film of CoSi2 grown on Si(100). This is the first observation of the IR vibrational mode of the cubic structure of CoSi2 and the result is in very good agreement with theoretical calculations. In order to characterize the sample, the reflectance was extended up to 5.2 × 104 cm−1 and the refractive index was also directly obtained in a more limited spectral range by spectroscopic ellipsometry. The IR structure was then quantitatively analyzed by means of a fit procedure, obtaining the values of ω0 = 327 cm−1 for the phonon energy, of γ = 10.5 cm−1 for the damping parameter and of 0.006 electronic charges for the screened effective ionic charge.
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| 37. |
- Duan, M., et al.
(författare)
-
Deposition of Scintillating Layers of Bismuth Germanate (BGO) Films for X-ray detector applications
- 1998
-
Ingår i: IEEE Transactions on Nuclear Science. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9499 .- 1558-1578. ; 45:3, s. 525-527
-
Tidskriftsartikel (refereegranskat)abstract
- Bi4Ge3O12 films were deposited by pulsed laser ablation on glass and SiO2/Si substrates. The crystal structures of the films depend on the deposition temperature. XRD patterns indicate that the films deposited at substrate temperature less than 400°C are amorphous. The as deposited amorphous films can be crystallized by post rapid thermal annealing (RTA) in the temperature window from 750°C to 800°C for 2 minutes in a oxygen ambient environment. RBS measurements confirm that the films have the same chemical composition as that of the target. The surface morphology of the films were characterized by atomic force microscopy (AFM)
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| 38. |
- Esebamen, Omeime, et al.
(författare)
-
Spectral Performance of Photon Counting Pixel Detector Using Attenuation Spectra for Test Samples
- 2009
-
Ingår i: AIP Conference Proceedings Volume 1204. - New York : American Institute of Physics (AIP). - 9780735407411 ; , s. 177-179
-
Konferensbidrag (refereegranskat)abstract
- When a material is placed along the path of an X-ray beam using a broad range of energy X-ray source, the energy dependence of the attenuation for the X-ray photons will be substantially dissimilar for different materials. The process at which X-ray radiation loses its penetrating strength as it travels through a material will be significantly larger for photons with energy above k-edge energy of that material than for those with slightly lower energy. Hence energy resolved X-ray imaging can be used to achieve colour images revealing the material content of the test sample. The attenuation of the spectrum done by scanning an energy window through the spectrum was measured for a number of samples of different materials. The test samples include Sn, Gd and I with K-edge energy at 29 keV, 50 keV and 33 keV, respectively, using a Feinfocus microfocus X-ray source (FTP-105.02) with Medipix2 photon counting chip.
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| 39. |
- Esebamen, Omeime, et al.
(författare)
-
Surface State Effects on N+P Doped Electron Detector
- 2011
-
Ingår i: Journal of Instrumentation. - 1748-0221. ; 6:12, s. Art. no. C12019-
-
Tidskriftsartikel (refereegranskat)abstract
- Surface states and interface recombination velocity that exist between detector interfaces have always been known to affect the performance of a detector. This article describes how the detector performance varies when the doping profile is altered. When irradiated with electrons, the results show that while changes in the doping profile have an effect of the detector responsivity with respect to the interface recombination velocityVs, there is no visible effect with respect tofixed oxide chargeQfotherwise known as interface fixed charge density.
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| 40. |
- Esebamen, Omeime Xerviar, et al.
(författare)
-
A Different Approach of Determining the Responsivity of n+p Detectors Using Scanning Electron Microscopy
- 2012
-
Ingår i: Journal of semiconductors. - : IOP Publishing. - 1674-4926. ; 33:7, s. 074002-
-
Tidskriftsartikel (refereegranskat)abstract
- This paper explores an alternative to the standard method of studying the responsivities (the input—output gain) and other behaviours of detectors at low electron energy. The research does not aim to compare the results of differently doped n+p detectors; its purpose is to provide an alternative characterization method (using scanning electron microscopy) to those used in previous studies on the responsivity of n+p doped detectors as a function of the electron radiation energy and other interface parameters.
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| 41. |
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| 42. |
- Esebamen, Omeime Xerviar
(författare)
-
Characterization of interface states & radiation damage effects in duo-lateral PSDs : Using SEM microscopy and UV beam profiling techniques
- 2014
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- There has been an increase in the use of duo‐lateral position sensitive detectors inpractically every radiation and beam detection application. These devices unlike other light detection system utilize the effect of the lateral division of the generated photocurrent to measure the position of the integral focus of an incoming lightsignal. The performance of a PSD is impaired or strengthened by a number of events caused by parameters such as interface states and recombination introduced during the fabrication of the detector and/or its absorption of ionizing particles. This thesis show the results from the successful implementation of alternative characterization methods of these effects and parameters using scanning electronmicroscopy and UV beam profiling techniques on duo‐lateral position sensitive detectors (LPSDs). To help create the groundwork for the research content of this thesis, different technical reviews of previous studies on interface states, surface recombination velocity and radiation damage due to continuous absorption of ionizing irradiation on detectors are investigated. The thesis also examines published theoretical and measurement techniques used to characterize these surface/interface phenomena. The PSDs used in this research were developed using silicon technology and the various methodologies put into the fabrication of the detectors (n+p and p+n structures) were fashioned after the simulated models. The various steps associated with the clean room fabrication and the prior simulation steps are highlighted in the content of the thesis. Also discussed are the measurement techniques used incharacterizing the fixed oxide charge, surface recombination and the position deviation error of the LPSDs in a high vacuum environment of a scanning electron microscope SEM chamber. Using this method, the effects of interface states and surface recombination velocity on the responsivity of differently doped LPSDs were investigated. By lithographically patterning grid‐like structures used as scaleon n+p doped LPSD and using sweeping electrons from the SEM microscope, a very high linearity over the two‐dimensions of the LPSD total active area was observed. An improved responsivity for low energetic electrons was also achievedby the introduced n+p structure. The lithographically patterned grids helped eliminate further external measurement errors and uncertainties from the use of other typical movable measurement devices such as actuators and two dimensional adjusters which would normally be difficult to install in a remote vacuum chamber. In a similar vein, field plate and field rings were patterned around an array ofthe PSDs used as pixel detector(s). By studying the interpixel resistance and breakdown characteristics, the most effective structural arrangement of the field plate and field rings used to curb induced inversion channel between the n+ doped regions of the pixel‐detector is observed. By using UV beam profiling after the irradiation of UV (193 nm or 253 nm) beam on n+p and p+n doped PSDs, the degree of radiation damage was also investigated. The results obtained help to illustrate how prolonged UV radiation can impact on the linearity and the position deviation/error of UV detectors. The results in this thesis are most relevant in spectroscopic and microscopic applications where low energy electrons and medium UV (MUV) radiation are used.
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| 43. |
- Esebamen, Omeime Xerviar, et al.
(författare)
-
Comparative Study of UV Radiation Hardness of n+p and p+n Duo-Lateral Position Sensitive Detectors
- 2014
-
Ingår i: European Physical Journal. - : EDP Sciences. - 1286-0042 .- 1286-0050. ; 68:2, s. Art. no. 21301-
-
Tidskriftsartikel (refereegranskat)abstract
- We report experimental results on the degree of radiation damage in two duo-lateral position sensitive detectors (LPSDs) exposed to 193 nm and253 nm ultraviolet (UV) beam. One of the detectors was an in-house fabricated n(+) p LPSD and the other was a commercially available p(+) n LPSD. We report that at both wavelengths, the degradation damage from the UV photons absorption caused a much more significant deterioration in responsivity in the p(+) n LPSD than in the n(+) p LPSD. By employing a simple method, we were able to visualize the radiation damage on the active area of the LPSDs using 3-dimensional graphs. We were also able to characterize the impact of radiation damage on the linearity and position error of the detectors.
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| 44. |
- Esebamen, Omeime Xerviar, et al.
(författare)
-
Gridded Duo-lateral Position Sensitivity Detector with High Linearity to Low Energetic Electrons in Vacuum Environment
- 2014
-
Ingår i: IET Optoelectronics. - : Institution of Engineering and Technology (IET). - 1751-8768 .- 1751-8776. ; 8:6, s. 217-225
-
Tidskriftsartikel (refereegranskat)abstract
- Characterizing a position sensitive detector in a vacuum environment without beam position monitoring devices can bechallenging and expensive. With this in mind, we have designed and fabricated a duo-lateral position sensitive detector (PSD) incorporatedwith simple and inexpensive surface features. It was evaluated using scanning electron microscopy. To assist in pinpointing precise positioningas well as acting as path guide during the sweeping of electrons, multiple grids were lithographically patterned on the top layer of the duolateralPSD. By sweeping electrons along two axes of the detector, the position detection error of both axes was determined from the signalsrecorded using a transimpedance amplification circuit. We were able to characterize the linearity over the x- and y-axis of the PSD and theresults show a very high linearity over two-dimensions of the PSD’s active area and that accurate beam monitoring for spectroscopic measurement without additional beam position monitoring devices is possible.
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| 45. |
- Esebamen, Omeime X., et al.
(författare)
-
High resolution, low energy electron detector
- 2011
-
Ingår i: Journal of Instrumentation. - 1748-0221. ; 6:1, s. Art. no. P01001-
-
Tidskriftsartikel (refereegranskat)abstract
- Electron detection at low energy range for scanning electron microscope (SEM), electron capture detector and electron probe micro-analysis (EPMA) applications, require detectors with high sensitivity and accuracy for low energy range. Such detectors must therefore have a thin entrance window and low recombination at the Si-SiO2 interface. An electron detector with 100 photons to electron-hole pair production rate having a 10 nm SiO2 passivating layer reveals a responsivity of approximately 0.25 A/W when irradiated. Simulations results showing the responsivity of electron interaction between detectors of varied interface fixed oxide charge density Qf show that there is an appreciable difference with the responsivity of a p +n detector and that of an n+p. The simulation results also show the significance of the effect of the minority carriers transport velocity Sn,p on the responsivity of the detector. © 2011 IOP Publishing Ltd and SISSA.
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| 46. |
- Esebamen, Omeime Xerviar
(författare)
-
Simulation, Measurement and Analysis of the Response of Electron- and Position Sensitive Detector
- 2012
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Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Different methods exist in relation to probing and investigating thephysical and structural composition of materials especially detectors whoseusage have become an integral part of radiation detection. The use of thescanning electron microscopy is just one of such exploratory methods. Thistechnique uses a focused beam of high-energy electrons to generate a varietyof signals at the surface of the device under investigationThis thesis presents the results derived from signals from electron beamsampleinteractions, revealing information about the different cleanroomfabricated electron detectors used. This information includes the detector’sexternal morphology and texture, surface recombination, fixed oxide chargeand the behavioral characteristic in the form of its position detection accuracyand linearity.An electron detector with a high ionization factor and which has a 10nmSilicon Oxide passivating layer was fabricated. Results from using the scanningelectron microscopy showed that its maximum responsivity wasapproximately 0.25 A/W from a possible 0.27 A/W. In conjunction withsimulations, results also showed the significance of the effect of the minoritycarrier's surface recombination velocity on the responsivity of the detectors.In addition, measurements were conducted to ascertain the performancevariance of these electron detectors with respect to their surfacerecombination velocity and fixed oxide charge when the doping profile isaltered.By incorporating special features on a fabricated duo-lateral positionsensitive detector (PSD), a position sensing resolution of the PSD using theelectron microscopic method was also evaluated. The evaluation showed avery high linearity over two-dimensions for 77% of the PSD’s active area.The results in this thesis offer a significant improvement in electrondetectors for applications such as gas chromatography detection of traceamounts of chemical compounds in a sample as well as applications involvingposition sensitive detection.
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| 47. |
- Forsberg, Viviane, 1981-, et al.
(författare)
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Photodetector of multilayer exfoliated MoS2 deposited on polyimide films
- 2018
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We fabricated a photodetector based on multilayer molybdenum disulfide (MoS2) by micromechanical cleavage of a molybdenite crystal using a polyimide film. We deposited 40 nm of gold by vacuum sputtering and copper tape was used for the contacts. Without any surface treatment, we achieved high responsivity at different incident optical power. The calculated responsivity was 23 mA/W of incident optical power in the range between 400 and 800 nm. For the responsivity measurement it was estimated that MoS2 have a bandgap of 1.6 eV, which lies between monolayer and multilayer films. The thickness of the MoS2 thin film was determined by Raman spectroscopy evaluating the difference between the in plane and out of plane Raman modes. The measurement of IV curves indicated Ohmic contacts in respect to the Au regardless of the incident optical power. Our device fabrication was much simpler than previous reported devices and can be used to test the light absorption and luminescence capabilities of exfoliated MoS2.
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| 48. |
- Fröjdh, Anna, et al.
(författare)
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An alpha particle detector for measuring radon levels
- 2010
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Ingår i: Proceedings of Nuclear Science Symposium Conference Record (NSS/MIC), 2010. - : IEEE conference proceedings. - 9781424491063 ; , s. 460-461
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Konferensbidrag (refereegranskat)abstract
- An alpha particle detector for measuring radon levels through measurement of radon progeny concentration has been developed. The detector is a silicon diode optimized for these measurements. Different alternating and non-alternating guard ring structures and different doping profiles have been investigated.
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| 49. |
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| 50. |
- Fröjdh, Anna, 1986-, et al.
(författare)
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Processing and characterization of a MEDIPIX2-compatible silicon sensor with 220 mu m pixel size
- 2011
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Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - : Elsevier BV. - 0168-9002 .- 1872-9576. ; 633:Suppl 1, s. S78-S80
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Tidskriftsartikel (refereegranskat)abstract
- Pixellated silicon detectors with a pixel size of 220 um have been fabricated at Mid Sweden University. The detectors will be bonded to the MEDIPIX2 [1] readout chip. The purpose is to investigate the performance of an energy sensitive X-ray imaging sensor with reduced charge sharing.The detectors were fabricated on high purity silicon with a wafer thickness of 500 um and a resistivity of more than 15 kohmcm. One reason for the choice of material was to get experience for future work with very thick detectors requiring ultra high resistivity in order to be depleted. During the initial work in this project some issued were found concerning inter pixel resistance and the efficiency of the guard rings. This led to a study of existing papers on the subject [2,3,4,5] and to extensive simulations of the electric field and the charge transport in different parts of the device.A modified process has been developed using alternating p+ and n+ guard rings and an outer n+ doping. The results of the simulations and the process will be described as well as an outline for a process for fabrication of very thick detectors with limited guard ring extension.References[1] - X. Llopart, M. Campbell, R. Dinapoli, D. San Segundo and E. Pernigotti, IEEE Trans. Nucl. Sci., vol. 49, 2279-2283, October 2002.[2] – L. Evensen, A. Hanneborg, B Sundby Avset, M. Mese, Nuclear Instruments and Methods in Physics Research A 337 (1993) 44 – 52[3] – T. Pavalainen, T. Tuuva, K. Leinonen, Nuclear Instruments and Methods in Physics Research A 573 (2007) 277 – 279[4] – Z. Li, W. Huang, L. J. Zhao, IEEE Trans. Nucl. Sci., vol. 47, No. 3. 729 – 735 , June 2000.[5] – D. Han, C. Wang, G. Wang, S. Du, L. Shen, X. Tian, X. Zhang, IEEE Transactions on Electron devices, Vol. 50, No. 2, 537 – 540, February 2003
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