| 1. |
- Sadi, Toufik, et al.
(författare)
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Electroluminescent cooling in intracavity light emitters : modeling and experiments
- 2018
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Ingår i: Optical and Quantum Electronics. - : Springer Science and Business Media LLC. - 0306-8919 .- 1572-817X. ; 50:1
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Tidskriftsartikel (refereegranskat)abstract
- We develop a coupled electronic charge and photon transport simulation model to allow for deeper analysis of our recent experimental studies of intracavity double diode structures (DDSs). The studied structures consist of optically coupled AlGaAs/GaAs double heterojunction light emitting diode (LED) and GaAs p–n-homojunction photodiode (PD) structure, integrated as a single semiconductor device. The drift–diffusion formalism for charge transport and an optical model, coupling the LED and the PD, are self-consistently applied to complement our experimental work on the evaluation of the efficiency of these DDSs. This is to understand better their suitability for electroluminescent cooling (ELC) demonstration, and shed further light on electroluminescence and optical energy transfer in the structures. The presented results emphasize the adverse effect of non-radiative recombination on device efficiency, which is the main obstacle for achieving ELC in III-V semiconductors.
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| 2. |
- Sadi, Toufik, et al.
(författare)
-
Modeling of charge and photon transport in coupled intracavity light emitters
- 2017
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Ingår i: 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017. - 9781509053230 ; , s. 201-202
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Konferensbidrag (refereegranskat)abstract
- To enable a more detailed analysis of our recent studies of intracavity double diode structures (DDSs), new simulation tools are needed. Such simulation models must account for both charge and photon transport in the studied structures, consisting of optically coupled AlGaAs/GaAs double heterojunction light emitting diode (LED) and GaAs p-n-homojunction photodiode (PD) structure, enclosed within a single semiconductor cavity. We apply the drift-diffusion formalism for charge transport and an optical model coupling the LED and the PD, with the aim of complementing our experimental work on the efficiency of these devices to understand better their suitability for electroluminescence cooling [1], and shedding further light on electroluminescence and optical energy transfer in the structures.
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| 3. |
- Tiira, Jonna, et al.
(författare)
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Intracavity double diode structures with GaInP barrier layers for thermophotonic cooling
- 2017
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Ingår i: Optical and Electronic Cooling of Solids II. - : SPIE. - 9781510606838 ; 10121
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Konferensbidrag (refereegranskat)abstract
- Optical cooling of semiconductors has recently been demonstrated both for optically pumped CdS nanobelts and for electrically injected GaInAsSb LEDs at very low powers. To enable cooling at larger power and to understand and overcome the main obstacles in optical cooling of conventional semiconductor structures, we study thermophotonic (TPX) heat transport in cavity coupled light emitters. Our structures consist of a double heterojunction (DHJ) LED with a GaAs active layer and a corresponding DHJ or a p-n-homojunction photodiode, enclosed within a single semiconductor cavity to eliminate the light extraction challenges. Our presently studied double diode structures (DDS) use GaInP barriers around the GaAs active layer instead of the AlGaAs barriers used in our previous structures. We characterize our updated double diode structures by four point probe IV-measurements and measure how the material modifications affect the recombination parameters and coupling quantum efficiencies in the structures. The coupling quantum efficiency of the new devices with InGaP barrier layers is found to be approximately 10 % larger than for the structures with AlGaAs barriers at the point of maximum efficiency.
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