| 1. |
- Gryglas-Borysiewicz, Marta, et al.
(författare)
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Hydrostatic-pressure-induced changes of magnetic anisotropy in (Ga, Mn) As thin films
- 2017
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Ingår i: Journal of Physics. - : Institute of Physics Publishing (IOPP). - 0953-8984 .- 1361-648X. ; 29:11
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Tidskriftsartikel (refereegranskat)abstract
- The impact of hydrostatic pressure on magnetic anisotropy energies in (Ga, Mn) As thin films with in-plane and out-of-plane magnetic easy axes predefined by epitaxial strain was investigated. In both types of sample we observed a clear increase in both in-plane and out-of-plane anisotropy parameters with pressure. The out-of-plane anisotropy constant is well reproduced by the mean-field p-d Zener model; however, the changes in uniaxial anisotropy are much larger than expected in the Mn-Mn dimer scenario.
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| 2. |
- Gryglas-Borysiewicz, Marta, et al.
(författare)
-
Hydrostatic pressure influence on T-C in (Ga,Mn)As
- 2020
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Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 101:5, s. 1-10
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Tidskriftsartikel (refereegranskat)abstract
- The influence of hydrostatic pressure on the Curie temperature T-C of thin ferromagnetic (Ga,Mn)As layers is studied. New experimental data unambiguously point to both positive and negative pressure-induced changes of Curie temperature. The positive pressure coefficient is observed for samples with relatively high values of T-C and can be quantitatively described by the p-d Zener model of carrier-mediated ferromagnetism within the six-band k . p formalism and the ab initio approach. First-principles calculations of structural, electronic, and magnetic properties of (Ga,Mn)As show that antiferromagnetic coupling of substitutional Mn atoms with interstitial ones may account for a decrease of T-C under pressure in samples having a substantial concentration of interstitial Mn.
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| 3. |
- Seredynski, Bartlomiej, et al.
(författare)
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Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate : NiTe2 on GaAs
- 2021
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Ingår i: Crystal Growth & Design. - : American Chemical Society (ACS). - 1528-7483 .- 1528-7505. ; 21:10, s. 5773-5779
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Tidskriftsartikel (refereegranskat)abstract
- The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here, we present the first molecular beam epitaxy growth of a NiTe2 2D transition-metal dichalcogenide. Importantly, the growth is realized on a nearly lattice-matched GaAs(111)B substrate. Structural properties of the grown layers are investigated by electron diffraction, X-ray diffraction, and scanning tunneling microscopy. Surface coverage and atomic-scale order are evidenced by images obtained with atomic force, scanning electron, and transmission electron microscopy. Basic transport properties were measured confirming that the NiTe2 layers are metallic, with a Hall concentration of 10(20) to 10(23) cm(-3), depending on the growth conditions.
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