| 1. |
- Lebedev, A.A., et al.
(författare)
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Highly doped p-type 3C-SiC on 6H-SiC substrates
- 2008
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 23:7
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Tidskriftsartikel (refereegranskat)abstract
- Highly doped p-3C-SiC layers of good crystal perfection have been grown by sublimation epitaxy in vacuum. Analysis of the photoluminescence spectra and temperature dependence of the carrier concentration shows that at least two types of acceptor centers at ∼EV + 0.25 eV and at EV + 0.06-0.07 eV exist in the samples studied. A conclusion is reached that layers of this kind can be used as p-emitters in 3C-SiC devices. © 2008 IOP Publishing Ltd.
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| 2. |
- Lebedev, Alexander, 2000-, et al.
(författare)
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A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum
- 2007
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Ingår i: Semiconductors (Woodbury, N.Y.). - 1063-7826 .- 1090-6479. ; 41:3, s. 263-265
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Tidskriftsartikel (refereegranskat)abstract
- 3C-SiC epitaxial layers with a thickness of up to 100 μm were grown on 6H-SiC hexagonal substrates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3-0.5 cm2 and uncompensated donor concentration N d - N a ∼ (10 17-1018) cm-3 were produced at maximum growth rates of up to 200 μm/h. An X-ray analysis demonstrated that the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The photoluminescence (PL) spectrum of the layers was found to be dominated by the donor-acceptor (Al-N) recombination band peaked at hv ≈ 2.12 eV. The PL spectrum measured at 6 K was analyzed in detail. It is concluded that the epitaxial layers obtained can serve as substrates for 3C-SiC-based electronic devices. © Nauka/Interperiodica 2007.
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| 3. |
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| 4. |
- Lebedev, S.P., et al.
(författare)
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P-type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates
- 2009
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Ingår i: ECSCRM2008,2008. - Materials Science Forum Vols. 615-617 : Trans Tech Publications. - 9780878493340 ; , s. 177-180
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Konferensbidrag (refereegranskat)abstract
- Highly doped p-3C-SiC layers of good crystal perfection have been grown by sublimation epitaxy in vacuum. Analysis of the photoluminescence (PL) spectra and temperature dependence of the carrier concentration shows that at least two types of acceptor centers at ~EV + 0.25 eV and at EV + 0.06-0.07 eV exist in the samples studied. A conclusion is made that layers of this kind can be used as p-emitters in 3C-SiC devices.
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