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- Castro-Tirado, A. J., et al.
(författare)
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GRB 030227 : The first multiwavelength afterglow of an INTEGRAL GRB
- 2003
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Ingår i: Astronomy & Astrophysics. - : EDP Sciences. - 0004-6361 .- 1432-0746. ; 411:1, s. 315-319
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Tidskriftsartikel (refereegranskat)abstract
- We present multiwavelength observations of a gamma-ray burst detected byINTEGRAL (GRB 030227) between 5.3 hours and ~ 1.7days after the event. Here we report the discovery of a dim opticalafterglow (OA) that would not have been detected by many previoussearches due to its faintess (R ~ 23). This OA was seen to declinefollowing a power law decay with index alpha R = -0.95 +/-0.16. The spectral index beta_ opt/NIR yielded -1.25 +/- 0.14. Thesevalues may be explained by a relativistic expansion of a fireball (withp = 2.0) in the cooling regime. We also find evidence for inverseCompton scattering in X-rays.Based on observations with INTEGRAL, an ESA project with instruments andscience data centre funded by ESA member states (especially the PIcountries: Denmark, France, Germany, Italy, Switzerland, Spain), CzechRepublic and Poland, and with the participation of Russia and the USA.Also partially based on observations collected by the Gamma-Ray BurstCollaboration at ESO (GRACE) at the European Southern Observatory, Chile(ESO Large Programme 165.H-0464).
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2. |
- Khranovskyy, V., et al.
(författare)
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Improvement of ZnO thin film properties by application of ZnO buffer layers
- 2007
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 308:1, s. 93-98
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Tidskriftsartikel (refereegranskat)abstract
- The effect of ZnO buffer layers prepared at different temperatures on the structural, optical and morphological properties of the ZnO main layer is reported. ZnO thin films (comprising a buffer and a main layer) were deposited on (0 0 0 1) c-sapphire substrates by PEMOCVD. Two-step growth regimes were applied to realize a homoepitaxial growth on ZnO buffers: low-temperature ZnO buffer layer deposited at Ts=300 °C and the main layer at Ts=500 °C, high-temperature ZnO buffer layer deposited at Ts=500 °C and the main layer at Ts=300 °C. For comparison, a sample grown at high-temperature Ts=500 °C by one-step procedure was used. The low-temperature buffer layer has shown the most beneficial effect on the structural and morphological properties, as expressed by the narrowing of the (0 0 2) diffraction peak (FWHM=0.07°) and crystallite size enlargement. However, the surface roughness of this sample is higher then that of the sample grown by one-step procedure and this needs further considerations. The photoluminescence results seem to support a conclusion that the application of a low-temperature buffer layer among the studied temperature regimes is the most advantageous. © 2007 Elsevier B.V. All rights reserved.
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