| 1. |
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| 2. |
- Nene, Vishvanath, et al.
(författare)
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Genome sequence of Aedes aegypti, a major arbovirus vector.
- 2007
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Ingår i: Science (New York, N.Y.). - : American Association for the Advancement of Science (AAAS). - 1095-9203 .- 0036-8075. ; 316:5832, s. 1718-23
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Tidskriftsartikel (refereegranskat)abstract
- We present a draft sequence of the genome of Aedes aegypti, the primary vector for yellow fever and dengue fever, which at approximately 1376 million base pairs is about 5 times the size of the genome of the malaria vector Anopheles gambiae. Nearly 50% of the Ae. aegypti genome consists of transposable elements. These contribute to a factor of approximately 4 to 6 increase in average gene length and in sizes of intergenic regions relative to An. gambiae and Drosophila melanogaster. Nonetheless, chromosomal synteny is generally maintained among all three insects, although conservation of orthologous gene order is higher (by a factor of approximately 2) between the mosquito species than between either of them and the fruit fly. An increase in genes encoding odorant binding, cytochrome P450, and cuticle domains relative to An. gambiae suggests that members of these protein families underpin some of the biological differences between the two mosquito species.
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| 3. |
- Sodergren, Erica, et al.
(författare)
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The genome of the sea urchin Strongylocentrotus purpuratus.
- 2006
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Ingår i: Science. - : American Association for the Advancement of Science (AAAS). - 1095-9203 .- 0036-8075. ; 314:5801, s. 941-52
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Tidskriftsartikel (refereegranskat)abstract
- We report the sequence and analysis of the 814-megabase genome of the sea urchin Strongylocentrotus purpuratus, a model for developmental and systems biology. The sequencing strategy combined whole-genome shotgun and bacterial artificial chromosome (BAC) sequences. This use of BAC clones, aided by a pooling strategy, overcame difficulties associated with high heterozygosity of the genome. The genome encodes about 23,300 genes, including many previously thought to be vertebrate innovations or known only outside the deuterostomes. This echinoderm genome provides an evolutionary outgroup for the chordates and yields insights into the evolution of deuterostomes.
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| 4. |
- Richards, Stephen, et al.
(författare)
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The genome of the model beetle and pest Tribolium castaneum.
- 2008
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Ingår i: Nature. - 1476-4687. ; 452:7190, s. 949-55
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Tidskriftsartikel (refereegranskat)abstract
- Tribolium castaneum is a representative of earth’s most numerous eukaryotic order, a powerful model organism for the study of generalized insect development, and also an important pest of stored agricultural products. We describe its genome sequence here. This omnivorous beetle has evolved an ability to interact with a diverse chemical environment as evidenced by large expansions in odorant and gustatory receptors, as well as p450 and other detoxification enzymes. Developmental patterns in Tribolium are more representative of other arthropods than those found in Drosophila, a fact represented in gene content and function. For one, Tribolium has retained more ancestral genes involved in cell-cell communication than Drosophila, and some are expressed in the growth zone crucial for axial elongation in short germ development. Systemic RNAi in T. castaneum appears to use mechanisms distinct from those found in C. elegans, but nevertheless offers similar power for the elucidation of gene function and identification of targets for selective insect control.
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| 5. |
- Beyer, Jan, 1980-, et al.
(författare)
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Efficiency of spin injection in novel InAs quantum dotstructures: exciton vs. free carrier injection
- 2010
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Konferensbidrag (refereegranskat)abstract
- Unambiguous experimental evidence for a significant difference in efficiency of excitonic vs. free carrier spin injection is provided in novel laterally arranged self-assembled InAs/GaAs quantum dot structures, from optical orientation and tunable laser spectroscopy. A lower efficiency of exciton spin injection as compared to free carrier spin injection from wetting layers into QDs results in a distinct feature in luminescence polarization of the QDs as a function of excitation photon energy. It is shown that this difference is not related to carrier density and state-filling effects arising from the difference in optical absorption efficiency between the excitons and free carriers. Rather, it is a genuine property for exciton spin injection that suffers stronger spin relaxation due to Coulomb exchange interaction.
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| 6. |
- Buyanova, Irina A, 1960-, et al.
(författare)
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Novel GaNP nanowires for advanced optoelectronics and photonics
- 2018
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Ingår i: Novel compound semiconductor nanowires. - Singapore : Pan Stanford Publishing. - 9781315340722 - 9781315364407 ; , s. 107-132
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Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- This chapter discusses structural and optical properties of novel GaNP nanowires (NW), as well as their potential for future applications in optoelectronics and photonics. It reviews efforts devoted to the optimization of GaNP-based NWs for future applications in light-emitting devices and discusses the impacts of structural polymorphism on the radiative efficiency and band structure of the material. The chapter shows that GaNP NWs can be utilized as a source of linearly polarized light with the polarization direction that is not determined by dielectric mismatch between the NW and its surrounding. GaNP alloys are novel III–V semiconductors, which have a great potential for applications in amber-red light-emitting diodes and also as an active material in innovative intermediate the band solar cells. NWs grown under the non-optimized conditions usually suffer from various point and structural defects, which degrade the radiative efficiency.
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| 7. |
- Buyanova, Irina A, 1960-, et al.
(författare)
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Novel GaNP Nanowires for Advanced Optoelectronics and Photonics
- 2018
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Ingår i: Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications. - : Pan Stanford Publishing. - 9789814745765 - 9781315364407 ; , s. 107-132
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Bokkapitel (övrigt vetenskapligt/konstnärligt)
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| 8. |
- Dobrovolskiy, Alexander, et al.
(författare)
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Effects of Polytypism on Optical Properties and Band Structure ofIndividual Ga(N)P Nanowires from Correlative Spatially Resolved Structural and Optical Studies
- 2015
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Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 15:6, s. 4052-4058
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Tidskriftsartikel (refereegranskat)abstract
- III-V semiconductor nanowires (NWs) have gained significant interest as building blocks in novel nanoscale devices. The one-dimensional (1D) nanostructure architecture allows one to extend band structure engineering beyond quantum confinement effects by utilizing formation of different crystal phases that are thermodynamically unfavorable in bulk materials. It is therefore of crucial importance to understand the influence of variations in the NWs crystal structure on their fundamental physical properties. In this work we investigate effects of structural polytypism on the optical properties of gallium phosphide and GaP/GaNP core/shell NW structures by a correlative investigation on the structural and optical properties of individual NWs. The former is monitored by transmission electron microscopy, whereas the latter is studied via cathodoluminescence (CL) mapping. It is found that structural defects, such as rotational twins in zinc blende (ZB) GaNP, have detrimental effects on light emission intensity at low temperatures by promoting nonradiative recombination processes. On the other hand, formation of the wurtzite (WZ) phase does not notably affect the CL intensity neither in GaP nor in the GaNP alloy. This suggests that zone folding in WZ GaP does not enhance its radiative efficiency, consistent with theoretical predictions. We also show that the change in the lattice structure have negligible effects on the bandgap energies of the GaNP alloys, at least within the range of the investigated nitrogen compositions of <2%. Both WZ and ZB GaNP are found to have a significantly higher efficiency of radiative recombination as compared with that in parental GaP, promising for potential applications of GaNP NWs as efficient nanoscale light emitters within the desirable amber-red spectral range.
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| 9. |
- Filippov, Stanislav, et al.
(författare)
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Exciton Fine-Structure Splitting in Self-Assembled Lateral InAs/GaAs Quantum-Dot Molecular Structures
- 2015
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Ingår i: ACS Nano. - : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 9:6, s. 5741-5749
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Tidskriftsartikel (refereegranskat)abstract
- Fine-structure splitting (FSS) of excitons in semiconductor nanostructures is a key parameter that has significant implications in photon entanglement and polarization conversion between electron spins and photons, relevant to quantum information technology and spintronics. Here, we investigate exciton FSS in self-organized lateral InAs/GaAs quantum-dot molecular structures (QMSs) including laterally aligned double quantum dots (DQDs), quantum-dot clusters (QCs), and quantum rings (QRs), by employing polarization-resolved microphotoluminescence (μPL) spectroscopy. We find a clear trend in FSS between the studied QMSs depending on their geometric arrangements, from a large FSS in the DQDs to a smaller FSS in the QCs and QRs. This trend is accompanied by a corresponding difference in the optical polarization directions of the excitons between these QMSs, namely, the bright-exciton lines are linearly polarized preferably along or perpendicular to the [11̅0] crystallographic axis in the DQDs that also defines the alignment direction of the two constituting QDs, whereas in the QCs and QRs, the polarization directions are randomly oriented. We attribute the observed trend in the FSS to a significant reduction of the asymmetry in the lateral confinement potential of the excitons in the QRs and QCs as compared with the DQDs, as a result of a compensation between the effects of lateral shape anisotropy and piezoelectric field. Our work demonstrates that FSS strongly depends on the geometric arrangements of the QMSs, which effectively tune the degree of the compensation effects and are capable of reducing FSS even in a strained QD system to a limit similar to strain-free QDs. This approach provides a pathway in obtaining high-symmetry quantum emitters desirable for realizing photon entanglement and spintronic devices based on such nanostructures, utilizing an uninterrupted epitaxial growth procedure without special requirements for lattice-matched materials combinations, specific substrate orientations, and nanolithography.
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| 10. |
- Filippov, Stanislav, et al.
(författare)
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Origin of strong photoluminescence polarization in GaNP nanowires
- 2014
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Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 14:9, s. 5264-5269
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Tidskriftsartikel (refereegranskat)abstract
- The III-V semiconductor nanowires (NWs) have a great potential for applications in a variety of future electronic and photonic devices with enhanced functionality. In this work, we employ polarization resolved micro-photoluminescence (µ-PL) spectroscopy to study polarization properties of light emissions from individual GaNP and GaP/GaNP core/shell nanowires (NWs) with average diameters ranging between 100 and 350 nm. We show that the near-band-edge emission, which originates from the GaNP regions of the NWs, is strongly polarized (up to 60 % at 150 K) in the direction perpendicular to the NW axis. The polarization anisotropy can be retained up to room temperature. This polarization behavior, which is unusual for zinc blende NWs, is attributed to local strain in the vicinity of the N-related centers participating in the radiative recombination and to preferential alignment of their principal axis along the growth direction. Our findings therefore show that defect engineering via alloying with nitrogen provides an additional degree of freedom to tailor the polarization anisotropy of III-V nanowires, advantageous for their applications as nanoscale emitters of polarized light.
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| 11. |
- Jansson, Mattias, et al.
(författare)
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Effects of Nitrogen Incorporation on Structural and Optical Properties of GaNAsP Nanowires
- 2017
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Ingår i: The Journal of Physical Chemistry C. - : AMER CHEMICAL SOC. - 1932-7447 .- 1932-7455. ; 121:12, s. 7047-7055
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we carry out a comprehensive investigation of structural and optical effects in GaNAsP nanowires (NWs), which are novel materials promising for advanced photovoltaic applications. Despite a significant mismatch in electronegativity between N and As/P atoms, we show that incorporation of nitrogen does not degrade structural quality of the nanowires and the fabricated NW arrays have excellent compositional uniformity among individual wires. From temperature-dependent photoluminescence (PL) measurements, statistical fluctuations of the alloy composition are shown to lead to localization of photoexcited carriers at low temperatures but do not affect material properties at room temperature. According to time-resolved PL measurements, the room-temperature carrier lifetime increases in the GaNAsP NWs as compared with the GaAsP NWs, which indicates reduced nonradiative recombination. Moreover, in spite of the very low N content in the studied NWs (up to 0.16%), their bandgap energy can be tuned by more than 100 meV. This is accompanied by about 30% reduction in the temperature dependence of the bandgap energy. The presented results demonstrate that alloying of GaAsP with nitrogen provides an additional means of design optimization, beneficial for, e.g., NW-based intermediate band solar cells that are highly dependent on the optimum bandgap structure.
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| 12. |
- Jansson, Mattias, et al.
(författare)
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Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence
- 2019
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Ingår i: Nanotechnology. - : IOP PUBLISHING LTD. - 0957-4484 .- 1361-6528. ; 30:40
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Tidskriftsartikel (refereegranskat)abstract
- Cathodoluminescence (CL) and micro-photoluminescence spectroscopies are employed to investigate effects of structural defects on carrier recombination in GaNAsP nanowires (NWs) grown by molecular beam epitaxy on Si substrates. In the NWs with a low N content of 0.08%, these defects are found to promote non-radiative (NR) recombination, which causes spatial variation of the CL peak position and its intensity. Unexpectedly, these detrimental effects can be suppressed even by a small increase in the nitrogen composition from 0.08% to 0.12%. This is attributed to more efficient trapping of excited carriers/excitons to the localized states promoted by N-induced localization and also the presence of other NR channels At room temperature, the structural defects no longer dominate in carrier recombination even in the NWs with the lower nitrogen content, likely due to increasing importance of other recombination channels. Our work underlines the need in eliminating important thermally activated NR defects, other than the structural defects, for future optoelectronic applications of these NWs.
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| 13. |
- La, Rui, et al.
(författare)
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Self-catalyzed core-shell GaAs/GaNAs nanowires grown on patterned Si (111) by gas-source molecular beam epitaxy
- 2017
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 111
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Tidskriftsartikel (refereegranskat)abstract
- We report structural studies on the epitaxial growth of GaAs/GaNAs core-shell nanowires (NWs) on patterned Si (111) substrates by self-catalyzed selective area growth using Gas-Source Molecular Beam Epitaxy. Epitaxial growth conditions were obtained using a combination of dry and time-sensitive wet etching of the SiO2 growth mask and native SiO2 layer, respectively. We found that higher growth temperatures resulted in a higher yield for the epitaxial growth of patterned self-catalyzed GaAs NWs on Si with an optimal temperature of 690 °C. The GaNAs shell growth at 500 °C was found to be conformal and maintained an epitaxial and dislocation-free interface with both the Si substrate and the GaAs nanowire. The micro-photoluminescence (μ-PL) measurement at 6 K revealed two bands peaking at 1.45 and 1.17 eV, which could be emission from the GaAs core and GaNAs shell. Transmission electron microscopy showed the zincblende crystal structure of GaAs and GaAs/GaNAs core-shell NWs with minimal twinning near the base of the GaAs nanowires and at the tips of the GaAs/GaNAs core/shell nanowires. This study illustrates the feasibility of the epitaxial growth of patterned GaAs with dilute nitride shells on Si substrates, which would have potential for Si-friendly intermediate band solar cells and telecom emitters.
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| 14. |
- Puttisong, Yuttapoom, et al.
(författare)
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Defect-enabled Room-temperature Spin Functionality in Ga(In)NAs
- 2012
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Efficient generation, maintaining, manipulation and detection of electron spin polarization and coherence at room-temperature (RT) in semiconductors is a prerequisite for the success of future semiconductor spintronics. Potential spintronic devices are expected to be based on fundamental building blocks such as spin filters (or spin injectors or spin aligners), spin amplifiers and spin detectors. During the past decade spin filters and spin detectors have been a main focal point of intense research efforts in the field of semiconductor spintronics that have led to many innovative approaches and encouraging developments. In contrast, experimental developments in spin amplifiers have been extremely limited. At present, realization of efficient RT spin functionality remains to be a great challenge and a hotly pursued research topic.In this work, we explore a new and unconventional approach of defect-enabled spin functionality in a non-magnetic semiconductor without requiring a magnetic layer or external magnetic fields. We demonstrated efficient defect-engineered spin filtering in Ga(In)NAs, which is capable of generating a remarkably high spin polarization degree (> 40%) of conduction electrons at RT. The highest spin polarization achieved to date by using this approach is up to 90 %. We also proposed a conceptually new spin amplifier by defect engineering and provided the first experimental demonstration of an efficient RT spin amplifier based on Ga(In)NAs with a spin gain up to 2700%! Such a spin amplifier is shown to be capable of amplifying a fast-modulating input spin signal while truthfully maintaining its time variation of the spin-encoded information, and is predicted to remain functional up to 1 GHz. By taking advantage of the spin amplification effect, we further showed that Ga(In)NAs can be employed as an efficient RT spin detector, with spin detection efficiency well exceeding 100%. Applications of such a spin-functional semiconductor material could potentially provide an attractive and viable solution to the current and important issues on RT spin injection, spin amplification and spin detection in semiconductors for future spintronics.
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| 15. |
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| 16. |
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| 17. |
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| 18. |
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| 19. |
- Stehr, Jan Eric, et al.
(författare)
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Efficient nitrogen incorporation in ZnO nanowires
- 2015
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Ingår i: Scientific Reports. - : Nature Publishing Group. - 2045-2322. ; 5
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Tidskriftsartikel (refereegranskat)abstract
- One-dimensional ZnO nanowires (NWs) are a promising materials system for a variety of applications. Utilization of ZnO, however, requires a good understanding and control of material properties that are largely affected by intrinsic defects and contaminants. In this work we provide experimental evidence for unintentional incorporation of nitrogen in ZnO NWs grown by rapid thermal chemical vapor deposition, from electron paramagnetic resonance spectroscopy. The incorporated nitrogen atoms are concluded to mainly reside at oxygen sites (NO). The NO centers are suggested to be located in proximity to the NW surface, based on their reduced optical ionization energy as compared with that in bulk. This implies a lower defect formation energy at the NW surface as compared with its bulk value, consistent with theoretical predictions. The revealed facilitated incorporation of nitrogen in ZnO nanostructures may be advantageous for realizing p-type conducting ZnO via N doping. The awareness of this process can also help to prevent such unintentional doping in structures with desired n-type conductivity.
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| 20. |
- Stehr, Jan Eric, et al.
(författare)
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Efficient Nitrogen Incorporation in ZnO Nanowires by Unintentional Doping
- 2015
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Konferensbidrag (refereegranskat)abstract
- One-dimensional ZnO nanowires (NWs) are a promising materials system for a variety of applications. Utilization of ZnO, however, requires a good understanding and control of material properties that are largely affected by intrinsic defects and contaminants. In this work we provide experimental evidence for unintentional incorporation of nitrogen in ZnO NWs grown by rapid thermal chemical vapor deposition, from electron paramagnetic resonance spectroscopy. The incorporated nitrogen atoms are concluded to mainly reside at oxygen sites (NO). The NO centers are suggested to be located in proximity to the NW surface, based on their reduced optical ionization energy as compared with that in bulk. This implies a lower defect formation energy at the NW surface as compared with its bulk value, consistent with theoretical predictions. The revealed facilitated incorporation of nitrogen in ZnO nanostructures may be advantageous for realizing p-type conducting ZnO via N doping. The awareness of this process can also help to prevent such unintentional doping in structures with desired n-type conductivity.
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| 21. |
- Stehr, Jan Eric, et al.
(författare)
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Turning ZnO into an Efficient Energy Upconversion Material by Defect Engineering
- 2014
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Ingår i: Advanced Functional Materials. - : Wiley-VCH Verlagsgesellschaft. - 1616-301X .- 1616-3028. ; 24:24, s. 3760-3764
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Tidskriftsartikel (refereegranskat)abstract
- Photon upconversion materials are attractive for a wide range of applications from medicine, biology, to photonics. Among them, ZnO is of particular interest owing to its outstanding combination of materials and physical properties. Though energy upconversion has been demonstrated in ZnO, the exact physical mechanism is still unknown, preventing control of the processes. Here, defects formed in bulk and nanostructured ZnO synthesized using standard growth techniques play a key role in promoting efficient energy upconversion via two-step two-photon absorption (TS-TPA). From photoluminescence excitation of the anti-Stokes emissions, the threshold energy of the TS-TPA process is determined as being 2.10-2.14 eV in all studied ZnO materials irrespective of the employed growth techniques. This photo-electron paramagnetic resonance studies show that this threshold closely matches the ionization energy of the zinc vacancy (a common grown-in intrinsic defect in ZnO), thereby identifying the zinc vacancy as being the dominant defect responsible for the observed efficient energy upconversion. The upconversion is found to persist even at a low excitation density, making it attractive for photonic and photovoltaic applications.
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| 22. |
- Sumaila, U. Rashid, et al.
(författare)
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WTO must ban harmful fisheries subsidies
- 2021
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Ingår i: Science. - : American Association for the Advancement of Science (AAAS). - 0036-8075 .- 1095-9203. ; 374:6567, s. 544-544
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
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| 23. |
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