SwePub - search: WFRF:(Vassilev Vessen 1969)

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1.	Güsten, R., et al. (author) APEX - The Atacama Pathfinder Experiment 2006 In: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 6267 I Conference paper (peer-reviewed)abstract APEX, the Atacama Pathfinder Experiment, has been successfully commissioned and is in operation now. This novel submillimeter telescope is located at 5107 m altitude on Llano de Chajnantor in the Chilean High Andes, on what is considered one of the world's outstanding sites for submillimeter astronomy. The primary reflector with 12 m diameter has been carefully adjusted by means of holography. Its surface smoothness of 17-18 μm makes APEX suitable for observations up to 200 μm, through all atmospheric submm windows accessible from the ground.
2.	Albadalejo Lijarcio, Juan Luis, 1994, et al. (author) Substrate-Less Vertical Chip-to-Waveguide Transition for W-Band Array Antenna Integration 2023 In: 2023 17TH EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION, EUCAP. - 2164-3342. - 9788831299077 Conference paper (peer-reviewed)abstract This paper presents a vertical transition from a high permittivity GaAs MMIC to rectangular waveguide using bondwires as a coupling structure. The transition is advantageous for the direct integration of any off-the-shelf chip into a waveguide antenna since no modification of the GSG-pad or additional substrate is needed. An EBG structure consisting of pins is used for the packaging of the chip in order to avoid field propagation in undesired directions. The simulations results show that the reflection coefficient is lower than -10 dB and the average insertion loss is better than 0.5 dB from around 87 to 101 GHz (14% relative bandwidth).
3.	Alexander, Naomi E., et al. (author) IMAGINE project : A low cost, high performance, monolithic passive mm-wave imager front-end 2012 In: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819492852 Conference paper (peer-reviewed)abstract The FP7 Research for SME project IMAGINE - a low cost, high performance monolithic passive mm-wave imager front-end is described in this paper. The main innovation areas for the project are: i) the development of a 94 GHz radiometer chipset and matching circuits suitable for monolithic integration. The chipset consists of a W-band low noise amplifier, fabricated using the commercially available OMMIC D007IH GaAs mHEMT process, and a zero bias resonant interband tunneling diode, fabricated using a patented epi-layer structure that is lattice matched to the same D007IH process; ii) the development of a 94 GHz antenna adapted for low cost manufacturing methods with performance suitable for real-time imaging; iii) the development of a low cost liquid crystal polymer PCB build-up technology with performance suitable for the integration and assembly of a 94 GHz radiometer module; iv) the assembly of technology demonstrator modules. The results achieved in these areas are presented.
4.	Algaba Brazalez, Astrid, 1983, et al. (author) Design of F-Band Transition From Microstrip to Ridge Gap Waveguide Including Monte Carlo Assembly Tolerance Analysis 2016 In: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 64:4, s. 1245-1254 Journal article (peer-reviewed)abstract This paper describes the design and realization of a transition from a microstrip line to a ridge gap waveguide operating between 95 and 115 GHz. The study includes simulations, measurements, and a Monte Carlo analysis of the assembly tolerances. The purpose of this tolerance study is to identify the most critical misalignments that affect the circuit performance and to provide guidelines about the assembly tolerance requirements for the proposed transition design.
5.	Auriacombe, Olivier, 1989, et al. (author) Dual-Polarised Radiometer for Road Surface Characterisation 2022 In: Journal of Infrared, Millimeter, and Terahertz Waves. - : Springer Science and Business Media LLC. - 1866-6892 .- 1866-6906. ; 43:1-2, s. 108-124 Journal article (peer-reviewed)abstract This paper presents measurements using a dual-polarised radiometer operating at 93 GHz to detect ice or water on asphalt in laboratory conditions. The brightness temperatures of both H and V polarizations were measured for a dry surface, liquid water, and ice on asphalt at observation angles of 50° and 56°. The results presented in this paper demonstrate that the studied road conditions can be identified by the radiometer. The measurements are compared with a model and surface parameters, such as dielectric constant and roughness are fitted and compared to reference values. The experiments and results, described in this article, are the first steps towards the future installation of a polarimetric sensor on a moving vehicle for traffic safety.
6.	Auriacombe, Olivier, 1989, et al. (author) Oil, water, and ice detection on road surfaces with a millimeter-wave radiometer 2020 In: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 11533 Conference paper (peer-reviewed)abstract Passive radiometers are well-known instruments used in the characterization of soil, sea surfaces and remote sensing of the earth atmosphere with satellites or airplanes. The instrument described in this article is a dual-polarised superheterodyne radiometer operating around 93 GHz. It is placed on a structure to measure road surface conditions (ice, water or oil) in a laboratory-controlled environment. This radiometer measures the reflected and emitted radiations from the road surface (asphalt and concrete) and the background temperature, in two orthogonal polarizations (H and V). The difference in the dielectric properties of the ice, oil and water from dry road surface allows to distinguish them efficiently. This kind of technique can be used for road surface recognition in all weather conditions and does not require presence of daylight or other sources of illumination. In this paper, calibration procedures and radiometric characterisations of the radiometer are studied in order to select the best and simpler method to operate the radiometer. It was found that calibrating the radiometer with only one blackbody target or using a table of gain and system noise temperature is sufficiently accurate over a long time to be able to distinguish dry from ice or water covered surfaces. The laboratory results are showing a high difference in the brightness temperature between road surface covered with ice, water or oil and the dry road surface. No ambiguities between those conditions exist but potential limitations could rise, for example if the road surface roughness changes during a measurement. Those promising results validate the potential of using radiometer for road safety and the automotive industry. The presented laboratory measurements are the first step towards the implementation of the instrument into a moving vehicle for alerting drivers ahead of unforeseen dangers. Downloading of the abstract is permitted for personal use only.
7.	Auriacombe, Olivier, 1989, et al. (author) Road Surface Characterization Using a Radiometer at 100 GHz 2020 In: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. - 2162-2027 .- 2162-2035. ; 2020-November, s. 136-137 Conference paper (peer-reviewed)abstract A dual polarization super-heterodyne radiometer operating between 85 and 100 GHz has been developed and used for surface characterization. The instrument can detect changes from dry to icy road in many environmental conditions (night, fog, rain) by measuring the combination of reflected/transmitted radiation from the surface at two orthogonal polarizations. The difference in brightness temperature between those polarizations is an accurate tool to distinguish ice from dry road surfaces. Results from measurement of dry asphalt and ice layers on asphalt are presented in this paper.
8.	Bao, M. Q., et al. (author) G-band Power Amplifiers in 130 nm InP Technology 2021 In: EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference. ; , s. 85-88 Conference paper (peer-reviewed)abstract Two G-band three-stage power amplifiers (PA), a Darlington PA and a stacked PA, are designed and manufactured in 130 nm InP HBT Technology. The stacked PA shows a 70 GHz bandwidth of S21 (from 140 GHz to 210 GHz) with a peak S21 gain of 30 dB. It has a fractional bandwidth (FBW) of 40%. While the Darlington PA demonstrates a 90 GHz bandwidth of S21 (from 130 GHz to 220 GHz) with a peak S21 gain of 20 dB, the FBW of the Darlington PA is 51% which is highest among the G-band PAs. Furthermore, the Darlington PA has a saturated output power, Psat, of 9.6 dBm at 150 GHz, and a power added efficiency (PAE) of 14.7% with a 55 mW de power consumption. The stacked PA has a Psat of 13.4 dBm at 150 GHz, and a PAE of 17.3% with a 108 mW dc power consumption. To authors' knowledge, the stacked PA has the highest PAE among the D/G-band PAs published in the literature.
9.	Belitsky, Victor, 1955, et al. (author) Facility Heterodyne Receiver for the Atacama Pathfinder Experiment Telescope 2007 In: Proceedings of Joint 32nd International Conference on Infrared Millimeter Waves and 15th International conference on Terahertz Electronics, Sept 3-7, 2007, City Hall, Cardiff, Wales, UK. ; , s. 326-328 Conference paper (peer-reviewed)
10.	Belitsky, Victor, 1955, et al. (author) Heterodyne Single-Pixel Facility Instrumentation for APEX Telescope 2006 In: in "Millimeter and Submillimeter Detectors for Astronomy III", eds. J. Zmuidzinas, W.S. Holland, S. Withington, W.D. Duncan, Proceedings of SPIE. ; 6275, s. 15- Conference paper (other academic/artistic)
11.	Belitsky, Victor, 1955, et al. (author) Superconducting microstrip line model studies at millimetre and sub-milimetre waves 2006 In: Int. Journal of Infrared and Mill. Waves. ; 27:6, s. 809-834 Journal article (peer-reviewed)
12.	Belitsky, Victor, 1955, et al. (author) Superconducting microstrip line models at millimeter and sub-millimeter waves and their comparison 2003 In: Proceedings of the 14th International Symposium on Space and Terahertz technology. ; , s. 456-475 Conference paper (peer-reviewed)abstract Performance of superconductor — insulator - superconductor (SIS) tunnel junction mixers andtheir instantaneous input RF bandwidth are mostly depending on the integrated tunin g circuit used to resonate out SIS junction capacitance; Nb-based SIS mixers operate in the frequency range of about 80 - 1000 GHz and typically use microstrip-based integrated tuning circuitries.One of the major challenges in designing the tuning circuitry for SIS mixers is accuracy of models for superconducting microstrip line (SML). Modeling gives the only tool to solve the problem of designing SML-based circuits because for such high frequencies no direct measurements of a superconducting transmission line can be made with required high accuracy.However, creating an accurate model for such a superconducting transmission line is a challengeby itself. In the SML, produced usually by thin-film technology, the magnetic field penetrationdepth is comparable with the thicknesses of the dielectric and superconductors comprising theline. As a result the electromagnetic wave is propagated not only in the dielectric media but alsoinside the superconducting strip and ground electrodes constituting the SML. This createsdramatic changes in the transmission line behavior that should be carefully accounted byincluding the superconducting material properties into the modeling. Nb superconductor, as themost commonly exploited material, was used in this study for modeling of the superconductingmicrostrip though the same approach would work for any different BCS superconductingmaterial. The purpose of this paper is to introduce a new model for SML and compare it withpreviously suggested models and results of SML numerical simulation.
13.	Belitsky, Victor, 1955, et al. (author) Terahertz Instrumentation For Radio Astronomy 2009 In: International Symposium on Terahertz Science and Technology between Japan and Sweden. ; , s. 28-29 Conference paper (other academic/artistic)abstract Radio Astronomy was always a frontrunner in the demand on terahertz technology. Millimetre and sub-millimetre wave receivers operate at ground-based observatories for more than 20 years with real Terahertz instruments making its way to ground-based [1] and space-based observatories, e.g., Herschel HIFI, during last years.In this talk, we will look at the key requirements to the radio astronomy and environmental science terahertz receivers using heterodyne technology. The most promising and established technologies for high-resolution spectroscopy instrumentation will be discussed. Using results of the Group for Advanced Receiver Development for Onsala Space Observatory 20 m telescope, for Atacama Pathfinder Experiment (APEX) telescope and ALMA Project Band 5, we will illustrate the trends and achievements in the terahertz instrumentation for radio astronomy.
14.	Beuerle, Bernhard, et al. (author) Integrating InP MMICs and Silicon Micromachined Waveguides for sub-THz Systems 2023 In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 44:10, s. 1800-1803 Journal article (peer-reviewed)abstract A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220-330 GHz in a back-to-back configuration. Measured insertion loss is 3-6 dB at 250-300 GHz, and return loss is in excess of 5 dB.
15.	Billade, Bhushan, 1982, et al. (author) ALMA Band 5 (163-211 GHz) Sideband Separating Mixer Design 2008 In: in Proceedings of The 19th International Symposium on Space Terahertz Technology, Groningen, 28-30 April 2008, ed. W. Wild, Space Research Organization of the Netherlands (SRON). ; part I, s. 250-252 Conference paper (peer-reviewed)
16.	Billade, Bhushan, 1982, et al. (author) ALMA Band 5 (163-211 GHz) sideband separation mixer design 2008 In: Proceedings of the 19th International Symposium on Space Terahertz Technology, ISSTT 2008. ; , s. 231-233 Conference paper (peer-reviewed)abstract We present the design of ALMA Band 5 sideband separation mixer based on Niobium superconducting SIS junctions and first experimental results for the double side band mixer. In this mixer the LO injection circuitry is integrated on the mixer substrate using a microstrip line directional coupler with slot-line branches in the ground plane. The isolated port of the LO coupler is terminated by a wideband floating elliptical termination. The mixer employs two SIS junctions with junction area of 3 ?m2 each, in twin junction configuration, followed by a quarter wave transformer to couple it to the RF probe. First measurements of the DSB mixer show promising results with noise temperature around 35K over the entire band.
17.	Carpenter, Sona, 1983, et al. (author) A +14.2 dBm, 90–140 GHz Wideband Frequency Tripler in 250-nm InP DHBT Technology 2018 In: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 28:3, s. 239-241 Journal article (peer-reviewed)abstract A single-chip active frequency tripler circuit with output at F-band (90-140 GHz) is presented. A common-emitter transistor stage with input and output matching circuits is used to produce the third harmonic, followed by a five-pole bandpass filter and a wideband four-stage power amplifier to amplify and increase the output power. The circuit is implemented in a 250-nm InP double-heterostructure bipolar transistor technology with ft/fmax 350/650 GHz, respectively. The chip achieves a peak output power of 14.2 dBm from 99 to 126 GHz at 2-dBm input power and conversion gain of 13 dB at -2-dBm input power. The measured 3-dB output bandwidth is 51 GHz from 90 to 141 GHz which corresponds to 44.2% relative bandwidth. It demonstrates up to 23-dBc rejection ratio of the first and the second harmonics. The dc power consumption is 156 mW at 2-dBm input power. The chip size is 0.9 × 0.96 mm2 including pads and achieves a power efficiency of 16.7%.
18.	Dochev, Dimitar Milkov, 1981, et al. (author) Superconducting IF biasing circuit for low-noise cryogenic applications 2010 In: Journal of Physics: Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 234:4 Conference paper (peer-reviewed)abstract A planar superconducting circuit designed for use in low-noise cryogenic applications is presented. The circuit is a bias-T combined with a 4–8 GHz impedance matching circuitry, which employs entirely planar design with a novel layout. The proposed and tested circuitry is intended to be used with a SIS mixer and incorporates a double section transformer based on microstrip line technology with a total impedance transformation of 5:1 within the frequency band. One of the transformer sections employs a three-line coupled line, which also serves as a DC block capacitor. The microstrip lines were manufactured using superconducting Nb metallization, which provides a conduction loss-free solution at the operation temperature of 4 K. S-parameter measurements at 4 K temperature were performed and found to be in a good agreement with the simulations. The device measured return loss is better than −10 dB within the frequency band. Furthermore, the circuit was tested as a part of 385 – 500 GHz double sideband heterodyne SIS receiver demonstrating a flat noise temperature response of 80 – 90 K over the entire IF band of 4 – 8 GHz.
19.	Eriksson, Klas, 1983, et al. (author) Design and Characterization of H-Band (220-325 GHz) Amplifiers in a 250-nm InP DHBT Technology 2014 In: IEEE Transactions on Terahertz Science and Technology. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-342X .- 2156-3446. ; 4:1, s. 56-64 Journal article (peer-reviewed)abstract Design and characterization of InP DHBT amplifiers in common-emitter and common-base topologies are presented. Both one-stage and multistage circuits are demonstrated. For one of the amplifiers, a peak gain of 24 dB at 255 GHz is measured, which is among the highest reported gains for HBT amplifiers above 200 GHz, and more than 10 dB gain at 210-315 GHz. The noise figure of this amplifier is measured on-wafer at 240-295 GHz, and it demonstrates a minimum noise figure of 10.4 dB at 265 GHz, which is the lowest reported noise figure for HBT amplifiers above 200 GHz.
20.	Eriksson, Klas, 1983, et al. (author) H-band MMIC amplifiers in 250 nm InP DHBT 2012 In: 19th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2012, Warsaw, 21-23 May 2012. - 9781457714351 ; 2, s. 744-747 Conference paper (peer-reviewed)abstract In this paper, single-stage and multistage amplifiers of two different topologies, common-base with resistive feedback and common-emitter, operating at up to 290 GHz are presented and demonstrated. The amplifiers use an indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) process. The multistage common-emitter amplifier demonstrates a gain above 10 dB from 220 to 280 GHz with a peak gain of 15 dB while the multistage common-base amplifier demonstrates a gain of 16 dB at 265 GHz.
21.	Fan, Fangfang, 1981, et al. (author) Bandwidth Investigation on Half-Height Pin in Ridge Gap Waveguide 2018 In: IEEE Transactions on Antennas and Propagation. - 0018-926X .- 1558-2221. ; 66:1, s. 100-108 Journal article (peer-reviewed)abstract Gap waveguide is a promising transmission structure, especially for millimeter-wave (mmW) and terahertz applications. It does not require conductive connection between the upper and the lower plates, which makes this technology gain advantages over conventional rectangular waveguides and substrate integrated waveguides in an mmW and terahertz regime. Different fabrication methods for gap waveguides should be employed for different frequency bands applied, such as molding, milling, die forming, electrical discharge machining, microelectromechanical systems, and 3-D printing. Therefore, different pin forms used in gap waveguides are required to match the applied fabrication methods. In this paper, a new pin form, the half-height-pin form, in gap waveguides is proposed for reducing the fabrication cost, and its stopband characteristics are investigated and compared with the previous full-height pins in gap waveguides at the V -band. A device of a double-ridged gap waveguide with two 90° bends for verifying the stopband characteristic analysis of the new pin form has been designed and manufactured. The measured data confirm our analysis and simulations.
22.	Farjana, Sadia, 1983, et al. (author) Multilayer Dry Film Photoresist Fabrication of a Robust >100 GHz Gap Waveguide Slot Array Antenna 2023 In: IEEE Access. - 2169-3536 .- 2169-3536. ; 11, s. 43630-43638 Journal article (peer-reviewed)abstract This article presents the first use of a multilayer dry film photoresist to fabricate a slot array antenna by micromachining. The proposed fabrication process demonstrates a straightforward and fast method of realizing antenna structures and delicate features with very high accuracy above 100 GHz. The slot array antenna design is based on gap waveguide technology. The designed antenna consists of two layers: a slot layer and a feed layer with a transition to measuring waveguide. The antenna contains structures that require a multiple level dry film fabrication process with thicknesses ranging from 80 μm to 400 μm with ± 10 μm tolerance. The fabricated antenna shows good accuracy. To make the fabricated antenna layers conductive, the fabricated polymer antenna was coated with Ti and Au. The input reflection coefficient was measured to be below – 11 dB over a 10% bandwidth from 136-148 GHz, and the antenna gain was measured to be 11.4 dBi at 142 GHz, both of which are in fair agreement with simulations. A thermal cycling test has been conducted on the fabricated antenna and the results show insignificant degradation at least up to 300 cycles in the temperature range –50 °C to 135 °C which is the typical temperature gradient range for many practical outdoor wireless applications.
23.	Forkman, Peter, 1959, et al. (author) A compact receiver system for simultaneous measurements of mesospheric CO and O3 2016 In: Geoscientific Instrumentation, Methods and Data Systems. - : Copernicus GmbH. - 2193-0856 .- 2193-0864. ; 2016:5, s. 27-44 Journal article (peer-reviewed)abstract During the last decades, ground-based microwave radiometry has matured into an established remote sensing technique for measuring vertical profiles of a number of gases in the stratosphere and the mesosphere. Microwave radiometry is the only ground-based technique that can provide vertical profiles of gases in the upper stratosphere and mesosphere both day and night, and even during cloudy conditions. Except for microwave instruments placed at high-altitude sites, or at sites with dry atmospheric conditions, only molecules with significant emission lines below 150 GHz, such as CO, H2O, and O3, can be observed. Vertical profiles of these molecules can give important information about chemistry and dynamics in the middle atmosphere. Today these measurements are performed at relatively few sites; more simple and reliable instrument solutions are required to make the measurement technique more widely spread. This need is urgent today as the number of satellite sensors observing the middle atmosphere is about to decrease drastically. In this study a compact double-sideband frequency-switched radiometer system for simultaneous observations of mesospheric CO at 115.27 GHz and O3 at 110.84 GHz is presented. The radiometer, its calibration scheme, and its observation method are presented. The retrieval procedure, including compensation of the different tropospheric attenuations at the two frequencies and error characterization, are also described. The first measurement series from October 2014 until April 2015 taken at the Onsala Space Observatory, OSO (57° N, 12° E), is analysed. The retrieved vertical profiles are compared with co-located CO and O3 data from the MLS instrument on the Aura satellite. The data sets from the instruments agree well with each other. The main differences are the higher OSO volume mixing ratios of O3 in the upper mesosphere during the winter nights and the higher OSO volume mixing ratios of CO in the mesosphere during the winter. The low bias of mesospheric winter values of CO from MLS compared to ground-based instruments was reported earlier.
24.	Gradinarsky, Lubomir, 1970, et al. (author) A method for detection of powder materials in metallic hollow structures using microwaves 2008 In: Measurement: Journal of the International Measurement Confederation. - : Elsevier BV. - 0263-2241. ; 41:6, s. 637-646 Journal article (peer-reviewed)abstract This paper presents a method for detection of the presence of small amounts of solids (powders, granules, etc.) inside metallic structures such as process vessels and containers. The method is based on propagation of microwave electromagnetic (EM) energy inside the structures and analysing the complex reflection coefficient Gamma represented by the scattering parameter S-11. 3D EM simulations were used to predict the behaviour of S for structures of rectangular, circular, and conical shapes, contaminated with materials with weak dielectric properties. The suggested method sensitivity and the effects of the material size and its distribution were assessed and results presented of comparisons of simulations and measurements. This paper demonstrates the ability to detect very low levels of contamination, e.g. of the order of 0.01-0.03 parts of a reference vessel's volume of one (e.g. length = 1 cm, width = 0.5 cm, and height = 2 cm) for materials with weak dielectric properties. This sensitivity is even better in terms of volume ratio (contamination/vessel's volume) for structures with bigger volumes and contaminants with stronger dielectric properties e.g. wet powders. The method is fully scalable for vessels with different sizes. Therefore industrial application of the method to physical processing of pharmaceutics, food, agriculture and others is envisioned. (C) 2007 Elsevier Ltd. All rights reserved.
25.	Hassona, Ahmed Adel, 1988, et al. (author) A Low-loss D-band Chip-to-Waveguide Transition Using Unilateral Fin-line Structure 2018 In: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2018-June, s. 390-393 Conference paper (peer-reviewed)abstract This paper presents a D-band interconnect realized using unilateral finline structure. The interconnect consists of a microstrip line implemented on a 75μm-thick SiC substrate. The line then couples to a unilateral finline taper that is mounted in the E-plane of a standard WR-6.5 D-band waveguide. The interconnect achieves low insertion loss and covers very wide frequency range. The measured minimum insertion loss is 0.67 dB and the maximum is 2 dB per transition across the entire D-band covering the frequency range 110-170 GHz. The transition does not require any galvanic contacts nor any special processing and can be implemented in any of the commercially available semiconductor technologies. This solution provides low-loss wideband packaging technique that enables millimeter-wave systems assembly using a high-performance simple approach.
26.	Hassona, Ahmed Adel, 1988, et al. (author) A non-galvanic D-band MMIC-to-waveguide transition using eWLB packaging technology 2017 In: 2017 IEEE MTT-S International Microwave Symposium (IMS). - : Institute of Electrical and Electronics Engineers (IEEE). - 0149-645X. - 9781509063604 ; , s. 510-512 Conference paper (peer-reviewed)abstract This paper presents a novel D-band interconnect implemented in a low-cost embedded Wafer Level Ball Grid Array (eWLB) commercial process. The non-galvanic transition is realized through a slot antenna directly radiating to a standard air filled waveguide. The interconnect achieves low insertion loss and relatively wide bandwidth. The measured average insertion loss is 3 dB across a bandwidth of 22% covering the frequency range 110138 GHz. The measured average return loss is -10 dB across the same frequency range. Adopting the low-cost eWLB process and standard waveguides makes the transition an attractive solution for interconnects beyond 100 GHz. This solution enables mm-wave system on chip (SoC) to be manufactured and assembled in high volumes cost effectively. To the authors' knowledge, this is first attempt to fabricate a packaging solution beyond 100 GHz using eWLB technology.
27.	Hassona, Ahmed Adel, 1988, et al. (author) Compact Low-Loss Chip-to-Waveguide and Chip-to-Chip Packaging Concept Using EBG Structures 2021 In: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 31:1, s. 9-12 Journal article (peer-reviewed)abstract This letter presents a novel approach for packaging millimeter-wave (mmW) and terahertz (THz) circuits. The proposed technique relies on using an on-chip coupling structure that couples the signal to a quarter-wavelength cavity, which in turn couples to either a waveguide (WG) or another chip. The solution also uses a periodic electromagnetic bandgap (EBG) structure that controls the electromagnetic wave and prevents field leakage in undesired directions. The proposed solution is fabricated and demonstrated at the D-band (110-170 GHz), and the measurement results show that it achieves a minimum insertion loss of 0.8 and a 3-dB bandwidth extending from 124 to 161 GHz. The proposed approach does not require any galvanic contacts and can be used for packaging integrated circuits in WG modules as well as for chip-to-chip communication.
28.	Hassona, Ahmed Adel, 1988, et al. (author) D-band waveguide-to-microstrip transition implemented in eWLB packaging technology 2020 In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 56:4, s. 187- Journal article (peer-reviewed)abstract This Letter presents a non-galvanic D-band (110-170 GHz) interconnect realised in embedded wafer level ball grid array (eWLB) packaging technology. The interconnect consists of a patch-radiator-based waveguide transition implemented using one of the technology's redistribution layers. The patch radiates to a WR-6.5 standard waveguide perpendicular to its plane. An electromagnetic band-gap structure realised by metal patches is used to suppress undesired modes and improve the performance of the transition. The proposed solution is experimentally verified, and measurement results show that the transition exhibits an average insertion loss of 2 dB across the frequency range 122-146 GHz which, to the best of the authors' knowledge, is the lowest reported loss for a D-band packaging solution in eWLB technology and hence addresses one of the main integration challenges facing millimetre-wave systems.
29.	Hassona, Ahmed Adel, 1988, et al. (author) D-band Waveguide Transition Based on Linearly Tapered Slot Antenna 2017 In: 2017 IMAPS Nordic Conference on Microelectronics Packaging (NordPac). - 9781538630556 ; , s. 64-67 Conference paper (peer-reviewed)abstract In this work, an on-chip Monolithic Microwave Integrated Circuit (MMIC) to waveguide transition is realized based on Linearly Tapered Slot antenna (LTSA) structure. The antenna is implemented on a 50-um-thick Gallium Arsenide (GaAs) substrate and placed in the E-plane of an air-filled D-band waveguide. The transition shows a maximum insertion loss of 1 dB across the frequency range 110-170 GHz. The average return loss of the transition is -15 dB and the minimum is -9 dB. The structure occupies an area of 0.82x0.6 mm2. The transition provides low-loss wide-band connectivity for millimeter-wave systems and addresses integration challenges facing systems operating beyond 100 GHz.
30.	Hassona, Ahmed Adel, 1988, et al. (author) Demonstration of +100-GHz Interconnects in eWLB Packaging Technology 2019 In: IEEE Transactions on Components, Packaging and Manufacturing Technology. - 2156-3985 .- 2156-3950. ; 9:7, s. 1406-1414 Journal article (peer-reviewed)abstract This paper presents waveguide interconnects implemented in an embedded wafer level ball grid array (eWLB) packaging technology. The interconnects operate at D-band (110–170 GHz), hence are enabling the realization and commercialization of high-data-rate systems. The interconnects rely on implementing radiating structures on the technology’s redistribution layers instead of using conventional ball grid arrays for the transmission of the RF signal to/from the package. The interconnects interface with standard WR-6.5 waveguides. Moreover, they do not require any galvanic contacts with the waveguide. The interconnects achieve a measured insertion loss of 2.8 dB over a bandwidth of 33%. The adopted eWLB packaging technology is suitable for low-cost high-volume production and allows heterogeneous integration with other technologies. This paper proposes cost-effective high-performance interconnects for THz integration, thus addressing one of the main challenges facing systems operating beyond 100 GHz.
31.	Hassona, Ahmed Adel, 1988, et al. (author) F-band Low-loss Tapered Slot Transition for Millimeter-wave System Packaging 2019 In: 2019 49th European Microwave Conference, EuMC 2019. - 9782874870552 ; , s. 432-435 Conference paper (peer-reviewed)abstract This work presents a packaging solution at F-band (90 - 140 GHz) using on-chip waveguide transition. The transition is realized using a Linearly Tapered Slot (LTS) implemented in a commercial Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) technology. The LTS is mounted in the E-plane of a split-block waveguide module and fed through a microstrip line. The transition is experimentally verified using a back-to-back test structure and it exhibits an average insertion loss of 1.7 dB over the frequency range extending from 100 to 135 GHz. This work presents an on-chip packaging technique to realize the interface between MMICs and standard waveguides at millimeter-wave (mmW) frequencies and hence addressing one of the main integration challenging facing systems operating at that range.
32.	Hassona, Ahmed Adel, 1988, et al. (author) G-band Frequency Converters in 130-nm InP DHBT Technology 2021 In: 2020 50th European Microwave Conference, EuMC 2020. ; , s. 1027-1030 Conference paper (peer-reviewed)abstract This paper presents the design and characterisation of a two G-band (140 - 220 GHz) fundamental mixers. The mixers are implemented in a 130-nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. First, a passive double balanced topology was investigated using a diode ring with balanced RF and LO ports. The mixer operates in both upconversion and downconversion modes. In order to reduce the power requirement on the local oscillator (LO) at G-band, the diodes were dc biased. Measurement results show that the mixer has an average conversion loss of 12.4 and 14 dB for upconversion and downconversion modes respectively and covers the frequency range extending from 180 to 194 GHz. The mixer exhibits an LO-RF isolation of 21 dB and requires an LO power of +2 dBm. An upconverting transconductance mixer topology was also investigated using the same technology. Measurement results show that the mixer has an average conversion gain of 1 dB over the frequency range of 171 to 220 GHz. The mixer operates as an upconverter and requires a low LO power of only -4 dBm.
33.	Hassona, Ahmed Adel, 1988, et al. (author) Nongalvanic Generic Packaging Solution Demonstrated in a Fully Integrated D-Band Receiver 2020 In: IEEE Transactions on Terahertz Science and Technology. - 2156-342X .- 2156-3446. ; 10:3, s. 321-330 Journal article (peer-reviewed)abstract This article presents a packaging technique for monolithic microwave integrated circuits (MMIC) demonstrated in a fully integrated receiver (Rx) module at the D -band (110–170 GHz). The solution consists of an MMIC-to-waveguide transition realized using an on-chip probe mounted in the E -plane of a split-block waveguide module. An artificial magnetic conductor structure is implemented to suppress cavity modes and achieve better coupling from the waveguide to the probe. The transition's performance is experimentally verified using a back-to-back test chip, and measurement results show that the proposed packaging solution achieves a low insertion loss of only 0.7 dB and covers a very wide frequency range extending from 105 to 175 GHz. The proposed transition is also integrated with an in-phase/quadrature-phase (I/Q) Rx on the same chip. The Rx is realized in a 250-nm indium phosphide double heterojunction bipolar transistor technology and consists of a low-noise amplifier, an I/Q mixer, and a frequency tripler. Measurement results show that the Rx module achieves an average conversion gain of 23 dB across the frequency range of 110–145 GHz and has an average noise figure of 10.6 dB. The Rx MMIC has a dc power consumption of 440 mW and occupies an area of 1.6 × 1.6 mm 2 . This article addresses one of the main challenges in systems operating above 100 GHz and presents a fully integrated packaging solution that suits large integrated circuits and does not require any galvanic contacts nor impose any limitations on MMIC dimensions.
34.	Hassona, Ahmed Adel, 1988, et al. (author) Packaging Technique of Highly Integrated Circuits Based on EBG Structure for +100 GHz Applications 2020 In: 14th European Conference on Antennas and Propagation, EuCAP 2020. Conference paper (peer-reviewed)abstract This work presents an on-chip packaging concept suitable for monolithic microwave integrated circuits (MMIC) operating above 100 GHz. The concept relies on using an on-chip transition that couples the signal to a standard air-filled waveguide. The proposed solution utilizes an electromagnetic band-gap (EBG) structure realized using bed of nails to prevent the propagation of parallel plate modes and improve the coupling between the MMIC and the waveguide. The technique shows an average insertion loss of only 0.6 dB across the frequency range 110 - 155 GHz. Moreover, the concept is demonstrated in a D-band amplifier circuitry that is fabricated in an indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. Experimental results show that the amplifier exhibits a maximum gain of 18.5 dB with no sign of propagation of any parallel plate modes. This work presents a verified solution for packaging high-frequency integrated circuits, and hence paves the way towards higher system integration above 100 GHz.
35.	Hassona, Ahmed Adel, 1988, et al. (author) Silicon Taper Based D-Band Chip to Waveguide Interconnect for Millimeter-Wave Systems 2017 In: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 27:12, s. 1092-1094 Journal article (peer-reviewed)abstract This letter presents a novel interconnect for coupling millimeter-wave (mmW) signals from integrated circuits to air-filled waveguides. The proposed solution is realized through a slot antenna implemented in embedded wafer level ball grid array (eWLB) process. The antenna radiates into a high-resistivity (HR) silicon taper perpendicular to its plane, which in turn radiates into an air-filled waveguide. The interconnect achieves a measured average insertion loss of 3.4 dB over the frequency range of 116-151 GHz. The proposed interconnect is generic and does not require any galvanic contacts. The utilized eWLB packaging process is suitable for low-cost high-volume production and allows heterogeneous integration with other technologies. This letter proposes a straightforward cost-effective high-performance interconnect for mmW integration, and thus, addressing one of the main challenges facing systems operating beyond 100 GHz.
36.	He, Zhongxia Simon, 1984, et al. (author) A 90-140 GHz, High Power Frequency Source Packaged in a Self-aligned Waveguide Module 2018 In: Asia Pacific Microwave Conference-Proceedings. - 9784902339451 ; 2018-November, s. 261-263 Conference paper (peer-reviewed)abstract This paper presents a solution for packaging monolithic microwave integrated circuit (MMIC) using commercially available liquid crystal polymer (LCP) substrate print circuit board. This package solution comprises of a novel self-aligned microstrip-to-waveguide transition design. For demonstration, an active frequency multiplier-by three MMIC at F-band (90-140 GHz) is packaged into a split-block waveguide module and tested. The circuit is implemented in a 250-nm InP double-heterostructure bipolar transistor technology with ft/fmax 350/650 GHz, respectively. The tripler module has measured output power of 10.6 dBm and a 3-dB output bandwidth of 36.3%, (90-130 GHz). Total power consumption is 156 mW at 2-dBm input power.
37.	Horberg, Mikael, et al. (author) A 143 GHz InP-based radio link characterized in long-term outdoor measurement 2018 In: 2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC). - 9784902339451 ; 2018-November, s. 234-236 Conference paper (peer-reviewed)abstract This paper reports on a 143 GHz radio link, evaluated in long-term outdoor measurements over a 200 m hop-length. The link has been characterized with a variable attenuator in a back-to-back configuration. For the outdoor tests the received power level and signal quality have been monitored for two months under various weather conditions. The radio link shows a highest throughput of 5.3 Gbps using 64 QAM and 1 GHz carrier bandwidth. The corresponding mean squared error of the demodulated signal is-25 dB, and the receiver sensitivity level is-42 dBm with 3 dB penalty compared to the theoretically calculated value for this setup. The long-term outdoor test is run at QPSK and 125 MHz carrier bandwidth.
38.	Karandikar, Yogesh, 1982, et al. (author) A compact 340 GHz 2x4 patch array with integrated subharmonic gilber core mixer as a building block for multi-pixel imaging frontends 2014 In: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. - 1550-8781. - 9781479936229 Conference paper (peer-reviewed)abstract For linear multi-pixel imaging systems, a linear stack of pixels comprising of an antenna and a heterodyne receiver are needed. Such pixels can be realized using MMIC processes. The main constraint for such multi-pixel system is a compact array of pixels giving high coupling to quasi-optics used for focusing. This paper addresses this trade-off and presents a novel solution based on beam synthesis of two consecutive subarrays. One such sub-array along with heterodyne receiver is described as half-pixel in this paper and it is realized using 2x4 patch array and Gilbert core sub-harmonic mixer using a 250nm DHBT process. The patch array has ohmic loss better than 8 dB and mixer conversion loss is 6-8 dB over 320-350 GHz RF band. The chip size is 1mm x 2mm and therefore for 7 simultaneous beams a MMIC of 8 half-pixels is foreseen.
39.	Karandikar, Yogesh, 1982, et al. (author) Compact integration of sub-harmonic resistive mixer with differential double slot antenna in G-band using 50nm InP-HEMT MMIC process 2012 In: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, 14 - 17 October 2012. - 1550-8781. - 9781467309295 Conference paper (peer-reviewed)abstract Sub-Harmonic resistive HEMT based mixers in Gband have been designed and integrated with Double Slot Antenna in Differential Configuration for the first time. This novel topology shows compact integration of active devices between antenna ports while achieving 25 GHz bandwidth around 200 GHz. The dual-gate 50nm x 15um InP HEMT used in the design achieves the conversion loss of 15 dB with +3 dBm LO power drive. Furthermore, a similar topology when used as a Harmonic mixer using a single gate device offers 16.5 dB conversion loss for +4 dBm LO power. For compact integration, via hole matching on slot antenna is also presented.
40.	Kildal, Per-Simon, 1951, et al. (author) Progress report on developing metamaterial EBG-based gap waveguide components and packaging solutions between 1 GHz and several 100 Ghz 2011 In: URSI National Radio Science Meeting, Spokane, USA, 3-8 July, 2011. Conference paper (peer-reviewed)
41.	Lai, Szhau, 1985, et al. (author) A varactor model including valanche noise source for VCOs phase noise simulation 2011 In: 41th European Microwave Conference , Manchester, UK, Oct 10-13, 2011. - 9781612842356 ; , s. 591-594 Conference paper (peer-reviewed)abstract Abstract — This work studies an important area of oscillatoroperation – VCO biased at varactor breakdown. In this operation, the oscillator’s phase noise is primarily determined by avalanche noise generated in the varactor, i.e., the phase noise can be modulated by the incremental shot noise generated at varactor breakdown. A simple experimental diode model was optimized for modeling varactor-breakdown current and an empirical shot noise model based on Hine’s theory presents good agreement with noise power measurements of varactors.The developed varactor noise-model has successfully been used to simulate the phase noise of a single-ended Colpitts InGaP HBT VCO over and beyond the varactor’s breakdown voltage. The VCO presents a phase noise below -100dBc/Hz for varactor voltages lower than breakdown voltage. Beyond the breakdown the phase noise gradually increases to -60 dBc/Hz@100kHz with a centre frequency deviating less than 0.6% from a 7.38GHz carrier.
42.	Lapkin, Igor, 1963, et al. (author) Optics Design and Verification for the APEX Swedish Heterodyne Facility Instrument (SHeFI) 2008 In: In Proceedings of The 19th International Symposium on Space Terahertz Technology, Groningen, 28-30 April, 2008, ed. W. Wild, Space Research Organization of the Netherlands (SRON). ; Part I, s. 351-357 Conference paper (peer-reviewed)abstract We present the design and verification of the receiver optics for the Single-Pixel HeterodyneFacility Instrument (SHFI) of the APEX telescope [1]. The SHFI is designed to cover thefrequency band 211 – 1390 GHz in 6 receiver channels. Four of the receiver channels have beendesigned, installed and characterized: 211-275 GHz (Band 1); 275-370 GHz (Band 2); 385-500 GHz (Band 3); 1250-1390 GHz (Band T2). The first three bands employ 2SB SIS mixertechnology and Band T2 employs HEB mixers in a waveguide balanced mixer configuration.The entire optics design was driven by the receiver position in the telescope Nasmyth cabin“A” (Fig.1) and the aperture limit of Ø150 mm, introduced by the elevation encoder inside theNasmyth tube A. This layout and the telescope geometry (~ 6 m distance from the focal plane tothe Cabin A) lead us to choose a single-pixel configuration and required using intermediateoptics with long focal distances. The common optics path, coupling the receivers to theCassegrain sub-reflector, consists of the three offset ellipsoidal mirrors, M3, M6, M8s, and threeflat mirrors, F4, F5, and F7s. The combination M3 and M6 via flat F4, F5, creates a Gaussiantelescope, providing frequency-independent re-imaging of the antenna focal plane from theCassegrain cabin into the Nasmyth cabin A. Switching between channels is achieved by theprecision rotating of the active mirror M8s. The mirror M8s in combination with each channelactive mirror M10 provides re-imaging of the secondary onto the feed horn aperture of theselected channel. Such a configuration provides frequency independent illumination of thesecondary with the edge taper -12dB. The angular position of the flat mirrors F9 is adjustable andgives additional possibility of fine-tuning of the beam alignment from the common optics toevery receiver channels.Verification of the optical designthrough measurements is essential inorder to align the beams from thecryostat windows to the commonoptics to minimize loss in thequasioptical guiding system. In orderto verify the design of the cold optics(corrugated horn + M10) in terms ofGaussian beam parameters, a newwideband vector field measurementsystem was developed [2]. Vectorfield measurements were performedfor band 1, 2, and 3, and scalarmeasurements were employed for theTHz band.
43.	Liao, Wan-Chun, 1985, et al. (author) A Directly Matched PA-Integrated K-band Antenna for Efficient mm-Wave High-Power Generation 2019 In: IEEE Antennas and Wireless Propagation Letters. - 1548-5757 .- 1536-1225. ; 18:11, s. 2389-2393 Journal article (peer-reviewed)abstract A K-band slot antenna element with integrated GaN (Gallium nitride) power amplifier (PA) is presented. It has been optimized through a circuit-EM co-design methodology to directly match the transistor drain output to its optimal load impedance ( Zopt=17+j46Ω ) while accounting for the over-the-air coupling effects in the vicinity of the transition between the PA and antenna. This obviates the need for using a potentially lossy and bandwidth-limiting output impedance matching network. The measured PA-integrated antenna gain of 15 dBi with a 40% total efficiency at 28 dBm output power agrees well with the theoretically achievable performance targets. The proposed element is compact ( 0.6×0.5×0.3 λ3 ), and thus well-suited to meet the high-performance demands of future emerging beamforming active antenna array applications.
44.	Liao, Wan-Chun, 1985, et al. (author) mmWave Metal Bowtie Slot Array Element Integrating Power Amplifier MMIC via On-Chip Probe to Enhance Efficiency and Bandwidth 2022 In: IEEE Transactions on Antennas and Propagation. - 0018-926X .- 1558-2221. ; 70 Journal article (peer-reviewed)abstract A Ka-band wideband, wide-scan range, and high-efficiency active integrated array element with a contactless transition at the antenna-power amplifier interface has been developed with the aid of a joint optimization design flow. This element employs a metal cavity-backed bowtie slot to realize the desired optimal interface impedance over a wide frequency band and scan range. The contactless transition in the form of an on-chip E-plane probe provides an electromagnetic coupling to the slot to avoid lossy and narrowband wire bonding, where the probe is integrated onto the custom-designed GaAs pHEMT power amplifier MMIC. The integrated design features a peak power efficiency of 40%, a fractional bandwidth of 11.3% (power efficiency≥20%), peak effective isotropic radiated power of 28 dBm, and a scan range of ±55° and ±40° in the two principal planes at the 1 dB compression point. The behavior of this element in the infinite connected-slot array environment is emulated and experimentally verified by the active waveguide simulator technique.
45.	Monje, Raquel, 1979, et al. (author) A 0.5 THz Sideband Separation SIS Mixer for APEX Telescope 2008 In: In Proceedings of The 19th International Symposium on Space Terahertz Technology, Groningen, 28-30 April, 2008, ed. W. Wild, Space Research Organization of the Netherlands (SRON). ; Part II, s. 439-443 Conference paper (peer-reviewed)abstract We present the design and the experimental results of a fixed-tuned sideband-separating superconductor-insulator-superconductor (SIS) mixer for 385 - 500 GHz. The sideband separation is achieved using a quadrature scheme, where two separate DSB mixer blocks are combined with an intermediate waveguide component containing the LO waveguide distribution circuitry and RF waveguide hybrid. The intermediate waveguide piece is fabricated by using copper micromachining, which gives dimensions’ accuracy better than 1 μm. The RF signal coming from the waveguide hybrid is coupled to the SIS junctions through an E-probe with integrated bias-T. We implemented an on-chip LO injection solution, where the LO coupler is integrated onto the mixer chip and fabricated together with the SIS junction and the tuning circuitry. The on-chip LO coupler is made as a combination of superconducting microstrip lines and slot-lines (branches), which gives almost a lossless solution. With the fabrication accuracy better than 0.5 μm by using optical lithography, the circuitry is proven to give a good performance following the simulations expectations.
46.	Monje, Raquel, 1979, et al. (author) A 385-500 GHz SIS Mixer for APEX Telescope 2006 In: in "Millimeter and Submillimeter Detectors for Astronomy III", eds. J. Zmuidzinas, W.S. Holland, S. Withington, W.D. Duncan, Proceedings of SPIE. ; 6275, s. 19- Conference paper (other academic/artistic)
47.	Monje, Raquel, 1979, et al. (author) A Novel Design of Broadband Waveguide Directional Couplers and 3-dB Hybrids 2006 In: IEEE MTT-S International Microwave Symposium 2006, June 11-15, San Francisco, California. - 0780395425 ; , s. 1169-1172 Conference paper (other academic/artistic)
48.	Monje, Raquel, 1979, et al. (author) Design of a Sideband Separating Receiver for 500 GHz 2006 In: Proceedings of 16th International Symposium on Space Terahertz Technology, Chalmers University of Technology, Gothenburg, Sweden, May 2-4, 2005. - 1652-0769. ; , s. 185-187 Conference paper (other academic/artistic)
49.	Monje, Raquel, 1979, et al. (author) High Performance of Resistive Thin-film Termination for Microstrip Lines 2004 In: Conference Digest 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics, Sept. 27 - Oct. 1, 2004, Karlsruhe, Germany, eds. M. Thumm, W. Wiesbeck. - 0780384903 ; , s. 699-700 Journal article (peer-reviewed)
50.	Monje, Raquel, 1979, et al. (author) High Quality Microstrip Termination for MMIC and Millimeter-Wave Applications 2005 In: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; , s. 1827-1830 Conference paper (peer-reviewed)

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