| 1. |
- Wang, C. H., et al.
(författare)
-
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
- 2014
-
Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226. ; 4:4
-
Tidskriftsartikel (refereegranskat)abstract
- Two high-k dielectric materials (Al2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (D-it). X-ray photoelectron spectroscopy analyses (XPS) for native oxides of (100) and (110) as-grown n-InAs epi wafers show an increase in As-oxide on the (100) surface and an increase in InOx on the (110) surface. In addition, XPS analyses of high-k (Al2O3 and HfO2) on n-InAs epi show that the intrinsic native oxide difference between (100) and (110) epi surfaces were eliminated by applying conventional in-situ pre-treatment (TriMethyAluminium (TMA)) before the high-k deposition. The capacitance-voltage (C-V) characterization of HfO2 and Al2O3 MOSCAPs on both types of n-InAs surfaces shows very similar C-V curves. The interface trap density (D-it) profiles show D-it minima of 6.1 x 10(12/)6.5 x 10(12) and 6.6 x 10(12)/7.3 x 10(12) cm(-2) eV(-1) for Al2O3 and HfO2, respectively for (100) and (110) InAs surfaces. The similar interface trap density (D-it) on (100) and (110) surface orientation were observed, which is beneficial to future InAs FinFET device with both (100) and (110) surface channel orientations present. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
|
|
| 2. |
- Wang, C. H., et al.
(författare)
-
InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
- 2013
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 103:14
-
Tidskriftsartikel (refereegranskat)abstract
- High-k/InAs interfaces have been manufactured using InAs surface oxygen termination and low temperature atomic layer deposition of HfO2. Capacitance-voltage (C-V) curves revert to essentially classical shape revealing mobile carrier response in accumulation and depletion, hole inversion is observed, and predicted minority carrier response frequency in the hundred kHz range is experimentally confirmed; reference samples using conventional techniques show a trap dominated capacitance response. C-V curves have been fitted using advanced models including nonparabolicity and Fermi-Dirac distribution. For an equivalent oxide thickness of 1.3 nm, an interface state density D-it = 2.2 x 10(11) cm(-2) eV(-1) has been obtained throughout the InAs bandgap. (C) 2013 AIP Publishing LLC.
|
|
| 3. |
- Vasen, T., et al.
(författare)
-
InAs nanowire GAA n-MOSFETs with 12-15 nm diameter
- 2016
-
Ingår i: 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. - 9781509006373 ; 2016-September
-
Konferensbidrag (refereegranskat)abstract
- InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-All-Around (GAA) MOSFETs with d = 12-15 nm are demonstrated. Ion = 314 μA/μm, and Ssat =68 mV/dec was achieved at Vdd = 0.5 V (Ioff = 0.1 μA/μm). Highest gm measured is 2693 μS/μm. Device performance is enabled by small diameter and optimized high-k/InAs gate stack process. Device performance tradeoffs between gm, Ron, and Imin are discussed.
|
|
| 4. |
- Thomas, S. M., et al.
(författare)
-
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors
- 2011
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 110:12, s. 124503-
-
Tidskriftsartikel (refereegranskat)abstract
- In this work, the impact of the local and remote Coulomb scattering mechanisms on electron and hole mobility are investigated. The effective mobilities in quasi-planar finFETs with TiN/Hf(0.4)Si(0.6)O/SiO(2) gate stacks have been measured at 300 K and 4 K. At 300 K, electron mobility is degraded below that of bulk MOSFETs in the literature, whereas hole mobility is comparable. The 4 K electron and hole mobilities have been modeled in terms of ionized impurity, local Coulomb, remote Coulomb and local roughness scattering. An existing model for remote Coulomb scattering from a polycrystalline silicon gate has been adapted to model remote Coulomb scattering from a high-kappa/SiO(2) gate stack. Subsequently, remote charge densities of 8 x 10(12) cm(-2) at the Hf(0.4)Si(0.6)O/SiO(2) interface were extracted and shown to be the dominant Coulomb scattering mechanism for both electron and hole mobilities at 4 K. Finally, a Monte Carlo simulation showed remote Coulomb scattering was responsible for the degraded 300 K electron mobility.
|
|
