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| 3. |
- Claesson, A., et al.
(author)
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Diode-pumped miniature lasers using microstructured silicon carriers
- 2000
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In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 36:5, s. 433-434
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Journal article (peer-reviewed)abstract
- A new versatile design concept for compact diode-pumped solid-state lasers based on a microstructured silicon carrier with etched V-grooves is presented. The carrier provides efficient thermal management as well as compact integration and alignment of all active acid passive optical components. In initial experiments, an Nd:YAG laser delivered a continuous-wave output of 3W.
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| 7. |
- Gunnarsson Sarius, Niklas, et al.
(author)
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Electrochemically based low-cost high precision processing in MOEMS packaging
- 2009
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In: Electrochimica Acta. - : Elsevier BV. - 0013-4686 .- 1873-3859. ; 54:9, s. 2458-2465
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Journal article (peer-reviewed)abstract
- Precision processing in MOEMS (micro-opto-electromechanical systems) packaging has been studied based on electrochemical processes with the purpose of establishing technology for low-cost multifunctional encapsulation of microsystems and assembly of opto-electric access links in polymer. The electrochemically based processes studied in this paper include: 1. Electroforming of a polymer moulding tool (stamper) in a nickel sulphamate electrolyte on a highprecision 3D etched silicon template. 2. Patterning of 3D surfaces by an electrophoretic photoresist. 3. Precision plating of Au and Sn for self-alignment of chips by eutectic Au-Sn solder. The results show that nickel stampers with adequately low internal stress can be electroformed on 3D silicon wafers. Furthermore, 3D polymer samples manufactured by the nickel stampers can be patterned with metal lines down to 20 mu m width using electrophoretic photoresist. Finally, eutectic Au-Sn solder bumps are realized by electroplating of Au and Sn followed by reflowing, satisfying the demands on dimension and alloy composition control over a 4 in. Si wafer.
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| 8. |
- Holm, J., et al.
(author)
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Optical arrangement
- 2000
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Patent (pop. science, debate, etc.)abstract
- A solid-state laser or arrangement for wavelength conversion is disclosed, which in its simplest embodiment is comprised of a light-generating body (102) arranged in a supporting means (103), the light-generating body (102) having a shape which is substantially complementary to a guiding structure (104) which is formed in the supporting means (103). The guiding structure (104) is formed with a high degree of accuracy, for instance, by etching the supporting means (103) or by replicating an original. Between the light-generating body (102) and the guiding structure (104) of the supporting means a thin contact layer (105) is arranged, the purpose of which is to increase the adherence to and/or the heat transfer to the supporting means (103). Due to the fact that the contact layer (105) is a deformable material, possible discrepancies as regards complementarity between the guiding structure (104) and the light-generating body (102) will be filled by the contact layer (105), whereby a close fit is obtained between the complementary structures.
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| 9. |
- Holm, J., et al.
(author)
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Optical arrangement
- 1999
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Patent (pop. science, debate, etc.)abstract
- A solid-state laser or arrangement for wavelength conversion is disclosed, which in its simplest embodiment is comprised of a light-generating body (102) arranged in a supporting means (103), the light-generating body (102) having a shape which is substantially complementary to a guiding structure (104) which is formed in the supporting means (103). The guiding structure (104) is formed with a high degree of accuracy, for instance, by etching the supporting means (103) or by replicating an original. Between the light-generating body (102) and the guiding structure (104) of the supporting means a thin contact layer (105) is arranged, the purpose of which is to increase the adherence to and/or the heat transfer to the supporting means (103). Due to the fact that the contact layer (105) is a deformable material, possible discrepancies as regards complementarity between the guiding structure (104) and the light-generating body (102) will be filled by the contact layer (105), whereby a close fit is obtained between the complementary structures.
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| 10. |
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| 11. |
- Lindgren, S., et al.
(author)
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Laser flip-chip mounting for passive alignment and high-frequency modulation
- 1996
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In: Optical Communication, 1996. ECOC ’96. 22nd European Conference on. ; , s. 103-106
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Conference paper (peer-reviewed)abstract
- We have developed a silicon motherboard for flip-chip mounting of lasers in a way that is compatible with high-frequency modulation (24 GHz) and which allows passive alignment of the lasers to single-mode fibres.
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| 12. |
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| 13. |
- Vieider, F. M., et al.
(author)
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RISK TAKING FOR ONESELF AND OTHERS: A STRUCTURAL MODEL APPROACH
- 2016
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In: Economic Inquiry. - : Wiley. - 0095-2583. ; 54:2, s. 879-894
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Journal article (peer-reviewed)abstract
- Economic theory makes no predictions about social factors affecting decisions under risk. We examine situations in which a decision maker decides for herself and another person under conditions of payoff equality, and compare them to individual decisions. By estimating a structural model, we find that responsibility leaves utility curvature unaffected, but accentuates the subjective distortion of very small and very large probabilities for both gains and losses. We also find that responsibility reduces loss aversion, but that these results only obtain under some specific definitions of the latter. These results serve to generalize and reconcile some of the still largely contradictory findings in the literature. They also have implications for financial agency, which we discuss.
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| 14. |
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| 15. |
- Wissmar, S. G. E., et al.
(author)
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SiGe quantum well thermistor materials
- 2008
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In: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 517:1, s. 337-339
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Journal article (peer-reviewed)abstract
- A novel monocrystalline high-performance thermistor material based on SiGe quantum well (QW) heterostructures is presented. A comparison between different growth temperatures for Si0.7Ge0.3 and Si growth is performed. Results illustrate a value of 2.3%/K for TCR with a low excess noise.
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