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- Lloyd Spetz, Anita, et al.
(författare)
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X-ray photoemission and Auger electron spectroscopy analysis of fast responding activated metal oxide silicon carbide gas sensors
- 1997
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 299:1-2, s. 183-189
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Tidskriftsartikel (refereegranskat)abstract
- Platinum-silicon dioxide-silicon carbide, MOSiC, sensors are possible to operate at high temperatures and show a gas sensitivity pattern which is of interest for many applications including exhaust gases from car engines. The introduction of a buffer layer of tantalum silicide between the metal and the silicon dioxide resulted, after an annealing step, in a very good adhesion of the gate contact and fast responding sensors with improved signal stability. Depth profiling using X-ray photoemission and Auger electron spectroscopy showed that the annealing step converts the tantalum silicide to a mixed phase predominantly containing tantalum pentoxide. Tantalum silicide as well as platinum silicide are also present in the metal-oxide interface region.
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