| 1. |
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| 2. |
- Carlsson, N, et al.
(författare)
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IMPROVED SIZE HOMOGENEITY OF INP-ON-GAINP STRANSKI-KRASTANOW ISLANDS BY GROWTH ON A THIN GAP INTERFACE LAYER
- 1995
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 156:1-2, s. 23-29
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Tidskriftsartikel (refereegranskat)abstract
- Coherent InP nano-sized islands, embedded into GaInP, have been grown by metal-organic vapour phase epitaxy using the Stranski-Krastanow growth mode. Photoluminescence, atomic force microscopy and transmission electron microscopy studies show that the insertion of a thin ∼ 4 monolayer thick GaP layer affects the critical thickness of the subsequently deposited two-dimensional InP wetting layer, increasing it from ∼ 1.5 monolayers (without an inserted GaP layer) to ∼ 2.5 monolayers (with an inserted GaP layer). We demonstrate that the inserted GaP layer affects also the island formation. The bimodal size distribution of Stranski-Krastanow islands, typical for low InP coverages, can be overcome without island coalescence by deposition on top of the thin GaP layer, where a coverage of InP of about 3.5–4.5 monolayers results in the formation of almost only the larger, fully developed, pyramidal islands. Annealing experiments at growth temperature of 580°C show that these islands (base area ≈ 40 × 50 nm2, height ≈ 10–15 nm, surface density ≈ (1−2) × 109 cm−2) are rather stable in a time-scale over several minutes before they slowly undergo an Ostwald ripening process.
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| 3. |
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| 4. |
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| 5. |
- Karlsson, L. S., et al.
(författare)
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Structural Characterisation of GaP <111 > B Nanowires by HRTEM
- 2008
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Ingår i: Microscopy of Semiconducting Material 2007. - 0930-8989. - 9781402086144 ; 120, s. 229-232
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Konferensbidrag (refereegranskat)abstract
- GaP < 111 > B nanowires are dominated by (111) twins orthogonal to the growth direction and show well-developed {111} side-facets. Based on this, a 3D-model has been constructed with a cross-section of an octahedron used as a building block. The twins can be of ortho- or para type i.e. by 60 degrees about the growth axis or 180 degrees in the twin plane. The segment thickness variation follows an exponential distribution with a clear dependence oil growth ternperature. Multislice simulations show different features of the twin types that are useful for further characterisation.
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| 6. |
- Kindlund, Hanna, et al.
(författare)
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Kinetic Engineering of Wurtzite and Zinc-Blende AlSb Shells on InAs Nanowires
- 2018
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 18:9, s. 5775-5781
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Tidskriftsartikel (refereegranskat)abstract
- Using AlSb as the model system, we demonstrate that kinetic limitations can lead to the preferential growth of wurtzite (WZ) AlSb shells rather than the thermodynamically stable zinc-blende (ZB) AlSb and that the WZ and ZB relative thickness can be tuned by a careful control of the deposition parameters. We report selective heteroepitaxial radial growth of AlSb deposited by metal-organic vapor phase epitaxy (MOVPE) on InAs nanowire core templates with engineered lengths of axial WZ and ZB segments. AlSb shell thickness, crystal phase, nanostructure, and composition are investigated as a function of the shell growth temperature, Ts, using scanning electron microscopy, transmission electron microscopy, electron tomography, and energy-dispersive X-ray spectroscopy. We find that ZB- and WZ-structured AlSb shells grow heteroepitaxially around the ZB and WZ segments of the InAs core, respectively. Surprisingly, at 390 < Ts < 450 °C, the WZ-AlSb shells are thicker than the ZB-AlSb shells, and their thickness increases with decreasing Ts. In comparison, the ZB-AlSb shell thicknesses increase slightly with increasing Ts. We find that the increased thickness of the WZ-AlSb shells is due to the formation and enhanced deposition on {112-0} facets rather than on the more commonly grown {101-0} sidewall facets. Overall, these results, which are in direct contrast with previous reports suggesting that heteroepitaxial radial growth of III-antimonides is always favored on the ZB-structure facets, indicate that the growth of WZ-AlSb is preferred over the thermodynamically stable ZB-AlSb at lower growth temperatures. We attribute this behavior to kinetic limitations of MOVPE of AlSb on ZB and WZ phases of InAs.
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| 7. |
- Mårtensson, T, et al.
(författare)
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III-V nanowires on Si and nanowire arrays
- 2005
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Ingår i: Book of abstracts: 342nd WE-Heraeus-Seminar Sci and Technol of Inorganic Nanowires, Bad Honnef, Germany (2005).
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 8. |
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| 9. |
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| 10. |
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| 11. |
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| 12. |
- Kumar, Mukesh, et al.
(författare)
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Hot Carrier Nanowire Transistors at the Ballistic Limit
- 2024
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Ingår i: Nano Letters. - 1530-6984. ; 24:26, s. 7948-7952
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate experimentally nonequilibrium transport in unipolar quasi-1D hot electron devices reaching the ballistic limit at room temperature. The devices are realized with heterostructure engineering in nanowires to obtain dopant- and dislocation-free 1D-epitaxy and flexible bandgap engineering. We show experimentally the control of hot electron injection with a graded conduction band profile and the subsequent filtering of hot and relaxed electrons with rectangular energy barriers. The number of electrons passing the barrier depends exponentially on the transport length with a mean-free path of 200-260 nm, and the electrons reach the ballistic transport regime for the shortest devices with 70% of the electrons flying freely through the base electrode and the barrier reflections limiting the transport to the collector.
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| 13. |
- Majeed, Maitham H., et al.
(författare)
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A PdII Carbene Complex with Anthracene Side-Arms for π-Stacking on Reduced Graphene Oxide (rGO) : Activity towards Undirected C–H Oxygenation of Arenes
- 2018
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Ingår i: European Journal of Inorganic Chemistry. - : Wiley. - 1434-1948 .- 1099-0682. ; 2018:43, s. 4742-4746
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Tidskriftsartikel (refereegranskat)abstract
- An N-heterocyclic carbene palladium(II) complex containing two anthracene side arms was immobilized on the surface of reduced graphene oxide (rGO) by π-stacking. The activity of the homogeneous analogue and the supported complex in undirected C–H acetoxylation reaction of arenes was studied. The results show that the catalytic efficiency in acetoxylation of benzene is improved in the immobilized materials compared to the homogeneous analogue. According to XPS analysis, the immobilized catalyst maintains the original oxidation state of PdII after the catalytic reaction.
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| 14. |
- Majeed, Maitham H, et al.
(författare)
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Directed C-H Halogenation Reactions Catalysed by PdII Supported on Polymers under Batch and Continuous Flow Conditions
- 2019
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Ingår i: Chemistry: A European Journal. - : Wiley. - 1521-3765 .- 0947-6539. ; 25:59, s. 13591-13597
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Tidskriftsartikel (refereegranskat)abstract
- A new generation of N-heterocyclic carbene palladium(II) complexes containing vinyl groups in different positions in the backbone of the N-heterocycle have been developed. The fully characterised monomers were copolymerised with divinylbenzene to fabricate robust polymer supported NHC-PdII complexes and these polymers were applied as heterogeneous catalysts in directed C-H halogenation of arenes with a pyridine-type directing group. The catalysts demonstrated medium-high catalytic activity with up to 90 % conversion and 100 % selectivity in chlorination. They are heterogeneous and recyclable (at least six times) with no significant leaching of palladium in batch mode catalysis. The best catalyst was also applied under continuous flow conditions where it disclosed an exceptional activity (90 % conversion) and 100 % selectivity for the mono-halogenated product for at least six days, with no leaching of palladium, no loss of activity and an ability to maintain the original oxidation state of PdII .
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| 15. |
- Metaferia, Wondwosen, et al.
(författare)
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N-type doping and morphology of GaAs nanowires in Aerotaxy
- 2018
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 29:28
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Tidskriftsartikel (refereegranskat)abstract
- Controlled doping in semiconductor nanowires modifies their electrical and optical properties, which are important for high efficiency optoelectronic devices. We have grown n-type (Sn) doped GaAs nanowires in Aerotaxy, a new continuous gas phase mass production technique. The morphology of Sn doped nanowires is found to be a strong function of dopant, tetraethyltin to trimethylgallium flow ratio, Au-Ga-Sn alloying, and nanowire growth temperatures. High temperature and high flow ratios result in low morphological quality nanowires and in parasitic growth on the wire base and surface. Alloying and growth temperatures of 400 °C and 530 °C, respectively, resulted in good morphological quality nanowires for a flow ratio of TESn to TMGa up to 2.25 ×10-3. The wires are pure zinc-blende for all investigated growth conditions, whereas nanowires grown by metal-organic vapor phase epitaxy with the same growth conditions are usually mainly Wurtzite. The growth rate of the doped wires is found to be dependent more on the TESn flow fraction than on alloying and nanowire growth temperatures. Our photoluminescence measurements, supported by four-point probe resistivity measurements, reveal that the carrier concentration in the doped wires varies only slightly (1-3) ×1019 cm-3 with TESn flow fraction and both alloying and growth temperatures, indicating that good morphological quality wires with high carrier density can be grown with low TESn flow. Carrier concentrations lower than 1019 cm-3 can be grown by further reducing the flow fraction of TESn, which may give better morphology wires.
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| 16. |
- Sanati, Mehri, et al.
(författare)
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Zirconia-Supported Vanadium Oxide Catalysts for Ammoxidation and Oxidation of Toluene: A Characterization and Activity Study
- 1993
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Ingår i: Applied Catalysis A: General. - 0926-860X. ; 106:1, s. 51-72
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Tidskriftsartikel (refereegranskat)abstract
- A series of samples of vanadia supported on monoclinic zirconia were prepared with nominal loadings from a half up to sixteen theoretical vanadia layers. The samples were characterized with X-ray diffraction, scanning electron microscopy combined with energy dispersive X-ray analysis, high-resolution electron microscopy, Raman and diffuse reflectance infrared spectroscopy, and were used in the oxidation and the ammoxidation of toluene. At loadings in the monolayer range, Raman and infrared bands from decavanadate-like and dehydrated tetrahedral vanadia species were at ca. 990 and ca. 1025 cm−1, respectively. Raman bands at 821 and 880 cm−1 were present only at the lowest loading and are characteristic of orthovanadate and pyrovanadate species, respectively. X-ray diffraction, Raman and infrared spectroscopic results revealed formation of some crystalline V2O5 and ZrV2O7 at loadings exceeding a theoretical monolayer. In this case, consideration of Raman intensity variations allowed the conclusion that additional non-crystalline vanadia must be present. According to high-resolution electron micrographs, this vanadia consists of an amorphous overlayer, 4–8 atomic layers thick. In toluene oxidation zirconia-supported vanadia compared with crystalline V2O5 was found less selective for benzaldehyde formation. In toluene ammoxidation, on the other hand, vanadia on zirconia was found to possess good activity and selectivity for benzonitrile formation. Amorphous vanadia was the most active structure on zirconia, while the selectivities for nitrile and aldehyde formations were almost independent of the loading for one theoretical layer and above.
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| 17. |
- Seifert, W, et al.
(författare)
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In-situ grown dots of InP on GaAs and GaInP - A comparison
- 1996
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Ingår i: 1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS. - 0780332849 ; , s. 746-749
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Konferensbidrag (refereegranskat)abstract
- Shape, size and density of dots of InP on GaInP and GaAs surfaces, formed in-situ by the strain-induced phase transition from a two-dimensional (Frank-Van der Merwe) into a three-dimensional layer+islands (Stranski-Krastanow) morphology, are investigated. The observations support models which include the kinetics of island formation as important ingredients to explain the rather high size homogeneity of the dots.
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| 18. |
- Tchaplyguine, M., et al.
(författare)
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Tin-oxide nanoparticles deposited from a beam : what happens to the composition?
- 2019
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Ingår i: Physical chemistry chemical physics : PCCP. - : Royal Society of Chemistry (RSC). - 1463-9084 .- 1463-9076. ; 21:11, s. 6287-6295
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Tidskriftsartikel (refereegranskat)abstract
- The debate around the oxidation states occurring in laboratory-prepared tin-oxide samples has been for a long time an obstacle for an unambiguous assignment of characterization studies performed on such samples. In particular the changes in the Sn core-level energies caused by oxidation - i.e. the chemical shifts - as measured by photoelectron spectroscopy (PES) have been under discussion. The assignment problem is especially pronounced for nanoscale structures, which are important for photovoltaics, electronics, catalysis, and gas sensing. The reasons for the difficulties lie both in the natural properties of tin oxides, which can have substantial deficiencies of oxygen and tin in the lattice, and in the shortcomings of the fabrication and PES-characterization procedures themselves. Our recent PES study on tin-oxide nanoparticles fabricated by vapour-aggregation gave a chemical shift two times larger than earlier reported for Sn(iv) oxide for the Sn 4d level. The implemented fabrication technique forms an in-vacuum beam of particles whose composition can be both controlled and characterized by PES. In the present work SnO and SnO2 nanoparticles fabricated this way were deposited from the beam and probed by PES directly, as well as after exposure to air. The deposited nanoparticle films were also imaged by TEM (Transmission Electron Microscopy). The effects of the deposition process and exposure to air on the chemical composition were studied. The PES study of deposited SnO2 nanoparticles in the Sn 4d and Sn 3d core-level regions revealed the same core level shift as for unsupported nanoparticles, indicating that the chemical composition is preserved in the deposition process. The TEM study demonstrated a crystalline structure of separate SnO2 particles with lattice constants close to the macroscopic Sn(iv)-oxide. The PES study on the particles exposed to air showed changes in the composition. For the film of initially SnO particles a higher intermediate oxide was created. For the SnO2 nanoparticle film a lower, but strong, intermediate oxide was observed, likely at the surface.
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| 19. |
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| 20. |
- Yuan, Ning, et al.
(författare)
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In situ XAS study of the local structure and oxidation state evolution of palladium in a reduced graphene oxide supported Pd(ii) carbene complex during an undirected C-H acetoxylation reaction
- 2019
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Ingår i: Catalysis Science and Technology. - : Royal Society of Chemistry (RSC). - 2044-4753 .- 2044-4761. ; 9:8, s. 2025-2031
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Tidskriftsartikel (refereegranskat)abstract
- In situ X-ray absorption spectroscopy (XAS) investigations have been performed to provide insights into the reaction mechanism of a palladium(ii) catalyzed undirected C-H acetoxylation reaction in the presence of an oxidant. A Pd(ii) N-heterocyclic carbene complex π-stacked onto reduced graphene oxide (rGO) was used as the catalyst. The Pd speciation during the catalytic process was examined by XAS, which revealed a possible mechanism over the course of the reaction. Pd(ii) complexes in the as-synthesized catalyst first go through a gradual ligand substitution where chloride ions bound to Pd(ii) are replaced by other ligands with a mean bond distance to Pd matching Pd-C/N/O. Parallel to this the mean oxidation state of Pd increases indicating the formation of Pd(iv) species. At a later stage, a fraction of the Pd complexes start to slowly transform into Pd nanoclusters. The mean average oxidation state of Pd decreases to the initial state at the end of the experiment which means that comparable amounts of Pd(0) and Pd(iv) are present. These observations from heterogeneous catalysis are in good agreement with its homogeneous analog and they support a Pd(ii)-Pd(iv)-Pd(ii) reaction mechanism.
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| 21. |
- Yuan, Ning, et al.
(författare)
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In Situ XAS Study of the Local Structure and Oxidation State Evolutions of Palladium in a Reduced Graphene Oxide Supported Pd(II) Carbene Complex during an Undirected C−H Acetoxylation Reaction
- 2019
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Ingår i: Catalysis Science & Technology. - 2044-4753 .- 2044-4761. ; 9:8, s. 2025-2031
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Tidskriftsartikel (refereegranskat)abstract
- In situ X-ray absorption spectroscopy (XAS) investigations have been performed to provide insights into the reaction mechanism of a palladium(II) catalyzed undirected C–H acetoxylation reaction in the presence of an oxidant. A Pd(II) N-heterocyclic carbene complex p-stacked onto reduced graphene oxide (rGO) was used as catalyst. The Pd speciation during the catalytic process was examined by XAS, which revealed a possible mechanism over the course of the reaction. Pd(II) complexes in the as-synthesized catalyst first go through a gradual ligand substitution where chloride ions bound to Pd(II) are replaced by other ligands with a bond distance to Pd corresponding to carbon, nitrogen and/or oxygen (L). Parallel to this the mean oxidation state of Pd increases indicating the formation of Pd(IV) species. At a later stage, a fraction of the Pd complexes start to slowly transform into Pd nanoclusters. The mean average oxidation state of Pd decreases to the initial state at the end of the experiment which means that comparable amounts of Pd(0) and Pd(IV) are present. These observations from heterogeneous catalysis are in good agreement with its homogeneous analog and they support a Pd(II)-Pd(IV)-Pd(II) reaction mechanism.
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