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1.	Andersson, J Y, et al. (author) Quantum structure based infrared detector research development within 874750’s centre of excellence IMAGIC 2010 In: Infrared physics & technology. - 1350-4495 .- 1879-0275. ; 53, s. 227-30 Journal article (peer-reviewed)
2.	Andersson, J. Y., et al. (author) Quantum structure based infrared detector research and development within Acreo's centre of excellence IMAGIC 2010 In: Infrared physics & technology. - : Elsevier BV. - 1350-4495 .- 1879-0275. ; 53:4, s. 227-230 Journal article (peer-reviewed)abstract Acreo has a long tradition of working with quantum structure based infrared (IR) detectors and arrays. This includes QWIP (quantum well infrared photodetector), QDIP (quantum dot infrared photodetector), and InAs/GaInSb based photon detectors of different structure and composition. It also covers R&D on uncooled microbolometers. The integrated thermistor material of such detectors is advantageously based on quantum structures that are optimised for high temperature coefficient and low noise. Especially the SiGe material system is preferred due to the compatibility with silicon technology. The R&D work on IR detectors is a prominent part of Acreo's centre of excellence "IMAGIC" on imaging detectors and systems for non-visible wavelengths. IMAGIC is a collaboration between Acreo, several industry partners and universities like the Royal Institute of Technology (KTH) and Linkoping University. (C) 2010 Elsevier B.V. All rights reserved.
3.	Wissmar, S. G. E., et al. (author) Monocrystalline SiGe for high-performance uncooled thermistor 2007 In: 2007 International Semiconductor Device Research Symposium, ISDRS. - 1424418917 - 9781424418916 Conference paper (peer-reviewed)
4.	Wissmar, S. G. E., et al. (author) SiGe quantum well thermistor materials 2008 In: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 517:1, s. 337-339 Journal article (peer-reviewed)abstract A novel monocrystalline high-performance thermistor material based on SiGe quantum well (QW) heterostructures is presented. A comparison between different growth temperatures for Si0.7Ge0.3 and Si growth is performed. Results illustrate a value of 2.3%/K for TCR with a low excess noise.
5.	Wissmar, S (author) SiGe quantum wells for uncooled long wavelength infra-red radiation (LWIR) sensors 2007 In: Journal of Physics: Conference Series 2007. ; 100, s. 42029- Journal article (peer-reviewed)

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Type of publication: journal article (4); conference paper (1)

Type of content: peer-reviewed (5)

Author/Editor: Andersson, J. Y. (4); Yamamoto, Y. (2); Wang, Q. (2); Hellström, S (2); Vieider, C. (2); Noharet, B. (2); show more...; Ericsson, P. (2); Asplund, C. (2); Malm, H. (2); Martijn, H. (2); Wissmar, S (2); Wissmar, S. G. E. (2); Tillack, B. (2); Gustafsson, Oscar (1); Radamson, Henry H. (1); Holtz, Per-Olof (1); Radamson, Henry (1); Hammar, Mattias (1); Gustafsson, O. (1); Hoglund, L. (1); Wissmar, Stanley (1); Höglund, L (1); Hammar, M (1); Radamson, H (1); Holtz, PO (1); Kolahdouz, Mohammadr ... (1); Radamsson, Henry H. (1); show less...

University: Royal Institute of Technology (3); RISE (2); Linköping University (1)

Language: English (5)

Research subject (UKÄ/SCB): Natural sciences (3); Engineering and Technology (1)

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