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- Nagatsuma, H., et al.
(författare)
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4H-SiC nMOSFETs with As-Doped S/D and NbNi silicide ohmic contacts
- 2016
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Ingår i: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015. - : Trans Tech Publications Ltd. - 9783035710427 ; , s. 573-576
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Konferensbidrag (refereegranskat)abstract
- 4H-SiC nMOSFETs with As-doped S/D and NbNi silicide ohmic contacts were demonstrated for radiation-hard CMOS electronics. The threshold voltage Vth was designed to be 3.0 V by TCAD simulation, and was 3.6 – 3.8 V at the fabricated devices. On / off ratio was approximately 105.
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