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  • Han, Yi, et al. (author)
  • Abnormal strain in suspended GeSn microstructures
  • 2018
  • In: Materials Research Express. - : IOP Publishing. - 2053-1591. ; 5:3
  • Journal article (peer-reviewed)abstract
    • A suspended GeSn microstructure is realized by a two-step selective wet etching technique with the aim of fully relaxing the compressive strain, promoting the indirect to direct bandgap transition and improving the optical property of GeSn thin films grown on Ge. The compressive strain was found efficiently relaxed, and even unexpected large tensile strain was displayed on regions of the microstructure by micro-Raman spectroscopy. Residual Ge patches under the suspended GeSn microstructure were found by scanning electron microscopy and proved to be the origin of the tensile strain by finite element method simulations. The tensile strain on the surface is beneficial for direct bandgap conversion and carrier accumulation. Significant enhancement of photoluminescence was obtained in the GeSn microstructures than the original thin film.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Wang, Shu Min, 1963 (1)
Huang, Hua (1)
Shao, Jun (1)
Chen, Xiren (1)
Song, Yuxin (1)
Han, Yi (1)
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Zhu, Zhongyunshen (1)
Zhang, Zhenpu (1)
Liu, Juanjuan (1)
Li, Yaoyao (1)
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University
Chalmers University of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Engineering and Technology (1)
Year
2018 (1)Undo refine

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