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Träfflista för sökning "L773:1930 8876 OR L773:9781479943784 srt2:(1993-1994)"

Search: L773:1930 8876 OR L773:9781479943784 > (1993-1994)

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  • Rorsman, Niklas, 1964, et al. (author)
  • Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate
  • 1993
  • In: 23rd European Solid State Device Research Conference, ESSDERC 1993. - 1930-8876. - 9782863321355 ; , s. 765-768
  • Conference paper (peer-reviewed)abstract
    • InAlAs/InGaAs HFETs having very high indium content (80 and 100%) in the channel have been fabricated on GaAs and electrically characterized. The extrinsic transconductance were 310 mS/mm (560 mS/mm at 77 K), and the saturation current were 700 mA/mm (600 mA/mm at 77 K) for an InAs channel. The value of fT and fmaxfor this device were measured to be 80 GHz and 50 GHz, respectively. The In0.8Ga 0.2As channel material had extrinsic transconductance of 320 mS/mm (470 mS/mm at 77 K), and the saturation current were 520 mA/mm (440 mA/mm at 77K). The value of fT and fmaxfor this device were measured to be 80 GHz and 50 GHz, respectively
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  • Result 1-1 of 1
Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Zirath, Herbert, 195 ... (1)
Wang, Shu Min, 1963 (1)
Andersson, Thorvald, ... (1)
Rorsman, Niklas, 196 ... (1)
Karlsson, Christer, ... (1)
University
Chalmers University of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
1993 (1)

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