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- Yousif, M. Y. A., 1963, et al.
(författare)
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HfO2 for strained-Si and strained-SiGe MOSFETs
- 2003
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Ingår i: ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03. - 1930-8876. - 0780379993 ; , s. 255-
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Konferensbidrag (refereegranskat)abstract
- We report on HfO2 gate dielectrics grown by atomic layer deposition (ALD) at 600°C on strained-Si and strained-SiGe layers. The strain status in the Si layer remained unaltered after HfO2 deposition and an interface state density of ~1×1011 cm-2 eV-1 was obtained for the case of thick HfO2 films. The breakdown fields were in the range 2-5 MV/cm, which is high compared to HfO2 films grown at higher temperatures. The leakage current was reduced by more than five orders of magnitude for the case of a thin HfO2 film with an EOT of 1.25 nm and ultra-thin cap (2.5-3 nm) layers on Si0.77Ge0.23/Si. The carrier transport through these HfO2 films was found to follow Frenkel-Poole emission over a wide range of applied gate voltage
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