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Träfflista för sökning "WFRF:(Angelov Krasimir 1978 ) "

Sökning: WFRF:(Angelov Krasimir 1978 )

  • Resultat 1-10 av 36
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1.
  • Agewall, S (författare)
  • [Why all these guidelines?]
  • 2014
  • Ingår i: Lakartidningen. - 0023-7205. ; 111:5, s. 129-
  • Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
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2.
  • Angelov, Iltcho, 1943, et al. (författare)
  • A balanced millimeter wave doubler based on pseudomorphic HEMTs
  • 1992
  • Ingår i: 1992 IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 1, s. 353-356
  • Konferensbidrag (refereegranskat)abstract
    • A balanced HEMT (high electron mobility transistor) doubler for operation at millimeter waves has been analyzed, fabricated, and characterized. Particular attention has been paid to the influence of the output circuit on the performance of the doubler. The doubler was analyzed with a harmonic balance method and an output power of 4 dBm at 42 GHz was obtained experimentally. The conversion gain is approximately -1 dB at 40 GHz at an input power of 5 dBm. Bias and frequency response were very close to the predicted ones.
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3.
  • Angelov, Iltcho, 1943, et al. (författare)
  • A new empirical nonlinear model for HEMT-devices
  • 1992
  • Ingår i: 1992 IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 0780306112 ; 3, s. 1583-1586
  • Konferensbidrag (refereegranskat)abstract
    • A novel signal model for HEMTs (high-electron-mobility transistors) capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak and gate-source and gate-drain capacitances, is described. Model parameter extraction is straightforward and is performed for a submicron gate-length ∂-doped pseudomorphic HEMT. The model has been used to predict the DC- and S-parameters of the devices and different nonlinear circuits such as mixers and multipliers with very high accuracy.
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4.
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5.
  • Angelov, Iltcho, 1943, et al. (författare)
  • CMOS LARGE SIGNAL and RF Noise MODEL FOR CAD
  • 2006
  • Ingår i: EUMC2006 Manchester. ; 1:1
  • Konferensbidrag (refereegranskat)abstract
    • A compact large-signal model(LS) for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter, Power Spectrum measurements and load pool measurements. Very good correspondences between measurements on 90 nm CMOS FETs and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits.The LS model was extended to model the RF Noise and implemented in commercial CAD tool and shows a good correspondence between the measurements and the model
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6.
  • Angelov, Iltcho, 1943, et al. (författare)
  • CMOS large signal model for CAD
  • 2003
  • Ingår i: 2003 IEEE MTT-S International Microwave Symposium Digest. ; 2, s. 643-646
  • Konferensbidrag (refereegranskat)
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7.
  • Angelov, Iltcho, 1943 (författare)
  • Empirical Device Models -Invited
  • 2006
  • Ingår i: EUMC2006 EUMC Workshop RF Device Modelling. ; 2006:1, s. 1-
  • Konferensbidrag (refereegranskat)abstract
    • Fundamentals of Empirical transistor models are discussed.An examples are given with FET and HBT LS models.
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8.
  • Angelov, Iltcho, 1943, et al. (författare)
  • Experiment design for quick statistical FET large signal model extraction
  • 2013
  • Ingår i: 81st ARFTG Microwave Measurement Conference: Metrology for High Speed Circuits and Systems, ARFTG 2013. - 9781467349826
  • Konferensbidrag (refereegranskat)abstract
    • Process variations influence the accuracy of designs and yield in production. This paper addresses the implementation of these variations in large signal FET models, with particular attention on the organization of measurements as to speed up the direct extraction of the model parameters. © 2013 IEEE.
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9.
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10.
  • Angelov, Iltcho, 1943, et al. (författare)
  • F-band resistive mixer based on heterostructure field effect transistor technology
  • 1993
  • Ingår i: Proceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems. - 0149-645X. - 0780312090 ; 2, s. 787-790
  • Konferensbidrag (refereegranskat)abstract
    • A fundamentally pumped millimeter wave resistive mixer based on an HFET technology working at F-band (90-140 GHz) is described for the first time. Nonlinear simulations have been performed for this mixer based on an specially designed double δ-doped pseudomorphic HFET device developed for this application. A minimum conversion loss between 12 to 13 dB was measured with the RF fixed at different frequencies between 108 to 114 GHz at an RF power of -13 dBm. Both theoretical and experimental results are presented in this paper.
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  • Resultat 1-10 av 36
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