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- Pellegrino, P., et al.
(författare)
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Time-resolved analysis of the white photoluminescence from SiO2 films after Si and C coimplantation
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 84:1, s. 25-27
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Tidskriftsartikel (refereegranskat)abstract
- The analysis of the white photoluminescence (PL) from Si+ and C+ coimplanted SiO2 is reported as a function of the implanted dose. By both steady and time-resolved measurements, the presence of several components in the emission between 2 and 3.3 eV has been resolved. The decays of the PL transients are characterized by short lifetimes, below 2 ns. For the emission at 2.1-2.3 eV, photoluminescence decay transients have been measured, obtaining a fast relaxation component of about 50-70 ps, followed by a slower component of the order of 1 ns. These values contrast with the very slow behavior, characteristic for the light emission from Si nanocrystals, and make carbon-related emitting centers interesting for optoelectronic applications where fast switching behavior is important.
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