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- Wang, Lijuan, et al.
(författare)
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Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots
- 2012
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 27:11, s. 115010-
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Tidskriftsartikel (refereegranskat)abstract
- GaAs p(+)-n(+) junctions with and without a layer of InAs quantum dots (QDs) embedded at the interface are discussed in this article. The current density versus voltage (I-V) characteristics show that the junctions without QDs are weak degenerate due to the Beryllium(Be) atoms diffusion of nominal p(++)-GaAs; the junctions with QDs generate enhanced tunneling current at forward bias, because the QDs layer reduces the Be diffusion and enables a two-step tunneling process. At room temperature, the current density of the sample with QDs is enhanced to 122 A cm(-2) at a forward bias of +0.32 V, which is about 2 orders of magnitude higher than the reference sample without QDs.
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