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- Puustinen, J., et al.
(författare)
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1.22 µm GaInNAs saturable absorber mirrors with tailored recovery time
- 2010
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Ingår i: Emerging trends and novel materials in photonics. - : American Institute of Physics (AIP). - 9780735408432 ; , s. 200-203
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Konferensbidrag (refereegranskat)abstract
- The effect of in-situ N-ion irradiation on the recombination dynamics of GaInNAs/GaAs semiconductor saturable absorber mirrors has been studied. The samples were fabricated by molecular beam epitaxy using a radio frequency plasma source for nitrogen incorporation in the absorber layers as well as for the irradiation. The recombination dynamics of irradiated samples were studied by pump-probe measurements. The recombination time of the absorbers could be reduced by increasing the irradiation time. The effect of the reduced recombination time on the pulse dynamics of a mode-locked laser setup was studied with a Bi-doped fibre laser. The pulse quality was found to improve with increased irradiation time and reduced recombination time, demonstrating the potential of the in-situ irradiation method for device applications.
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