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1.	Zhang, Zhibin, et al. (författare) All-around contact for carbon nanotube field-effect transistors made by ac dielectrophoresis 2006 Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 24:1, s. 131-135 Tidskriftsartikel (refereegranskat)abstract Carbon nanotube field-effect transistors (CNFETs) are fabricated by depositing one bundle of sinole-walled carbon nanotubes (SWNTs) per device between a pair of predefined Pd electrodes using ac dielectrophoresis. By repeating the process for the formation of the Pd electrodes after the bundle deposition, all-around Pd contacts are made to the SWNT bundles. After the formation of all-around contact, the CNFETs with only semiconducting SWNTs in the bundles retain a strong a 106,ate modulation with a high ratio of on to off current I-on/I-off For the CNFETs with at least one metallic SWNT in the bundles, their gate modulation disappears and carbon nanotube resistors (CNRs) are obtained. The on current I-on of CNFETs is found to be sensitive to the process for the formation of all-around contact. In contrast, the two-probe resistance of CNRs is consistently reduced after the all-around contacts. The electrical measurements also indicate the presence of an interlayer residing at the SWNT/Pd contacts.

Zhang, Zhibin, et al. (författare)
All-around contact for carbon nanotube field-effect transistors made by ac dielectrophoresis
2006
Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 24:1, s. 131-135
Tidskriftsartikel (refereegranskat)abstract
- Carbon nanotube field-effect transistors (CNFETs) are fabricated by depositing one bundle of sinole-walled carbon nanotubes (SWNTs) per device between a pair of predefined Pd electrodes using ac dielectrophoresis. By repeating the process for the formation of the Pd electrodes after the bundle deposition, all-around Pd contacts are made to the SWNT bundles. After the formation of all-around contact, the CNFETs with only semiconducting SWNTs in the bundles retain a strong a 106,ate modulation with a high ratio of on to off current I-on/I-off For the CNFETs with at least one metallic SWNT in the bundles, their gate modulation disappears and carbon nanotube resistors (CNRs) are obtained. The on current I-on of CNFETs is found to be sensitive to the process for the formation of all-around contact. In contrast, the two-probe resistance of CNRs is consistently reduced after the all-around contacts. The electrical measurements also indicate the presence of an interlayer residing at the SWNT/Pd contacts.

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