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  • Leon, R., et al. (author)
  • Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots
  • 2002
  • In: IEEE Transactions on Nuclear Science. - 0018-9499 .- 1558-1578. ; 49:6, s. 2844-2851
  • Journal article (peer-reviewed)abstract
    • The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional (3-D) quantum confinement.. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAS/AlGaAS), QD surface density (4 x 10(8) to 3 x 10(10) cm(-2)), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Taylor, W. (1)
Leon, R (1)
Marcinkevicius, Saul ... (1)
Lobo, C. (1)
Siegert, J. (1)
Cechavicius, B. (1)
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Magness, B. (1)
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University
Royal Institute of Technology (1)
Language
English (1)
Year
2002 (1)

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