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  • Malm, B. Gunnar, et al. (author)
  • Noise Properties of High-Mobility, 80 nm Gate Length MOSFETs on Supercritical Virtual Substrates
  • 2008
  • In: SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES. - : The Electrochemical Society. - 9781566776561 ; , s. 529-537
  • Conference paper (peer-reviewed)abstract
    • It was found that for strained Si channel layers of supercritical thickness oil relaxed SiGe virtual substrates, the 1/f noise oil,average is maintained at the same level as in unstrained devices. Short gate length nMOSFETs were analyzed statistically and the noise level variation, across a large number of samples, was similar in strained and unstrained devices. The obtained noise level variation was partly related to gate length fluctuations across the wafer, which was evident from a small V-T fluctuation.
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  • Result 1-1 of 1
Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Hellström, Per-Erik (1)
Östling, Mikael (1)
Malm, B. Gunnar (1)
Hållstedt, Julius (1)
University
Royal Institute of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
2008 (1)

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