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  • Wahlbrink, T., et al. (author)
  • Supercritical drying process for high aspect-ratio HSQ nano-structures
  • 2006
  • In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 83:4-9, s. 1124-1127
  • Journal article (peer-reviewed)abstract
    • Supercritical resist drying allows the fabrication of high aspect-ratio (AR) resist patterns. The potential of this drying technique to increase the maximum achievable AR and the resolution of the overall lithographic process is analyzed for hydrogen silsesquioxane (HSQ). The maximum achievable AR is doubled compared to conventional nitrogen blow drying. Furthermore, the resolution is improved significantly.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Lemme, Max C., 1970- (1)
Moller, M. (1)
Kurz, H. (1)
Bolten, J. (1)
Wahlbrink, T. (1)
Georgiev, Y M (1)
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Kupper, D (1)
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University
Royal Institute of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
2006 (1)

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