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- Salomonsson, Fredrik, et al.
(author)
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Low-threshold, high-temperature operation of 1.2 mu m InGaAs vertical cavity lasers
- 2001
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In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 37:15, s. 957-958
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Journal article (peer-reviewed)abstract
- The growth and characterisation of high performance InGaAs/GaAs quantum-well vertical cavity lasers with an emission wavelength of 1215 nm is reported. Continuous wave operation is demonstrated up to 105°C with a threshold current below 1 mA for T < 80°C. For a 2.5 μm device the room temperature threshold current, output power and slope efficiency is 0.6 mA, 0.6 mW and 0.2 W/A, respectively.
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