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  • He, Z Q, et al. (author)
  • As overlayer on GaAs(110) studied with photoemission
  • 1995
  • In: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 52:23, s. 16602-16607
  • Journal article (peer-reviewed)abstract
    • As-terminated GaAs(110) surfaces were prepared on ex situ cleaved substrates by molecular-beam epitaxy. The surface stoichiometry was controlled by postgrowth As deposition. Photoemission from a surface covered with a monolayer As was investigated in detail using synchrotron radiation. Two different surface components were found in core-level spectra, which are interpreted as due to adatoms bonding to the surface anions and cations. In the valence-band spectra several surface states were identified, in analogy with previous reports on the isoelectronic Sb/GaAs(110) system. The polarization dependence is not the same, however, which leads us to the conclusion that the adlayer bonding mechanisms are different in the two cases.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Ilver, L (1)
Kanski, J (1)
Karlsson, Ulf O. (1)
Nilsson, P. O. (1)
He, Z Q (1)
Khazmi, Y O (1)
University
Royal Institute of Technology (1)
Language
English (1)
Year
1995 (1)

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