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  • LELAY, G, et al. (author)
  • ELECTRONIC-PROPERTIES OF CLEAVED(110) AND MBE-GROWN(100) INAS SURFACES, CLEAN AND COVERED WITH AN ULTRA-THIN AG ADLAYER
  • 1993
  • In: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 70-1, s. 502-506
  • Journal article (peer-reviewed)abstract
    • The initial electronic structure of the pseudomorphic InAs/GaAs(100) heterostructure as well as that of the Ag/InAs(110) interface at 20 K have been studied by synchrotron radiation photoelectron spectroscopy. In the first case we find that the valence band spectra show no evidence for the formation of bulk-like energy bands. In the second case we prove for the first time that upon deposition of minute amounts of Ag at low temperature onto cleaved InAs(110) substrates one induces a giant movement of the Fermi level well into the conduction band thus creating a strong two-dimensional electron channel at the surface.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Kanski, J (1)
Karlsson, Ulf O. (1)
Nilsson, PO (1)
Hricovini, K. (1)
LeLay, G (1)
ARISTOV, VY (1)
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BONNET, JE (1)
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University
Royal Institute of Technology (1)
Language
English (1)
Year
1993 (1)

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