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  • Marcks von Würtemberg, Rickard, et al. (author)
  • High-power InGaAs/GaAs 1.3 μm VCSELs based on novel electrical confinement scheme
  • 2008
  • In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 44:6, s. 414-416
  • Journal article (peer-reviewed)abstract
    • Reported are 1.3 mu m InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a novel electrical confinement scheme based on lithographic definition and selective area epitaxial regrowth in the cavity region. More than 6 mW of output power with a record high differential efficiency of more than 70% is emitted from 10 mu m large devices.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Berggren, Jesper (1)
Hammar, Mattias (1)
Dainese, Matteo (1)
Marcks von Würtember ... (1)
University
Royal Institute of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
2008 (1)

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