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1.	Toropov, A. A., et al. (author) AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm 2017 In: Journal of Electronic Materials. - : SPRINGER. - 0361-5235 .- 1543-186X. ; 46:7, s. 3888-3893 Journal article (peer-reviewed)abstract We present theoretical optimization of the design of a quantum well (QW) heterostructure based on AlGaN alloys, aimed at achievement of the maximum possible internal quantum efficiency of emission in the mid-ultraviolet spectral range below 300 nm at room temperature. A sample with optimized parameters was fabricated by plasma-assisted molecular beam epitaxy using the submonolayer digital alloying technique for QW formation. High-angle annular dark-field scanning transmission electron microscopy confirmed strong compositional disordering of the thus-fabricated QW, which presumably facilitates lateral localization of charge carriers in the QW plane. Stress evolution in the heterostructure was monitored in real time during growth using a multibeam optical stress sensor intended for measurements of substrate curvature. Time-resolved photoluminescence spectroscopy confirmed that radiative recombination in the fabricated sample dominated in the whole temperature range up to 300 K. This leads to record weak temperature-induced quenching of the QW emission intensity, which at 300 K does not exceed 20% of the low-temperature value.

Toropov, A. A., et al. (author)
AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm
2017
In: Journal of Electronic Materials. - : SPRINGER. - 0361-5235 .- 1543-186X. ; 46:7, s. 3888-3893
Journal article (peer-reviewed)abstract
- We present theoretical optimization of the design of a quantum well (QW) heterostructure based on AlGaN alloys, aimed at achievement of the maximum possible internal quantum efficiency of emission in the mid-ultraviolet spectral range below 300 nm at room temperature. A sample with optimized parameters was fabricated by plasma-assisted molecular beam epitaxy using the submonolayer digital alloying technique for QW formation. High-angle annular dark-field scanning transmission electron microscopy confirmed strong compositional disordering of the thus-fabricated QW, which presumably facilitates lateral localization of charge carriers in the QW plane. Stress evolution in the heterostructure was monitored in real time during growth using a multibeam optical stress sensor intended for measurements of substrate curvature. Time-resolved photoluminescence spectroscopy confirmed that radiative recombination in the fabricated sample dominated in the whole temperature range up to 300 K. This leads to record weak temperature-induced quenching of the QW emission intensity, which at 300 K does not exceed 20% of the low-temperature value.

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