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1.	Zhang, Bin, et al. (author) Anomalously Strong Second‐Harmonic Generation in GaAs Nanowires via Crystal‐Structure Engineering 2021 In: Advanced Functional Materials. - Weinheim, Germany : Wiley-V C H Verlag GMBH. - 1616-301X .- 1616-3028. ; 31:36 Journal article (peer-reviewed)abstract GaAs-based semiconductors are highly attractive for diverse nonlinear photonic applications, owing to their non-centrosymmetric crystal structure and huge nonlinear optical coefficients. Nanostructured semiconductors, for example, nanowires (NWs), offer rich possibilities to tailor nonlinear optical properties and further enhance photonic device performance. In this study, it is demonstrated highly efficient second-harmonic generation in subwavelength wurtzite (WZ) GaAs NWs, reaching 2.5 × 10−5 W−1, which is about seven times higher than their zincblende counterpart. This enhancement is shown to be predominantly caused by an axial built-in electric field induced by spontaneous polarization in the WZ lattice via electric field-induced second-order nonlinear susceptibility and can be controlled optically and potentially electrically. The findings, therefore, provide an effective strategy for enhancing and manipulating the nonlinear optical response in subwavelength NWs by utilizing lattice engineering.

Zhang, Bin, et al. (author)
Anomalously Strong Second‐Harmonic Generation in GaAs Nanowires via Crystal‐Structure Engineering
2021
In: Advanced Functional Materials. - Weinheim, Germany : Wiley-V C H Verlag GMBH. - 1616-301X .- 1616-3028. ; 31:36
Journal article (peer-reviewed)abstract
- GaAs-based semiconductors are highly attractive for diverse nonlinear photonic applications, owing to their non-centrosymmetric crystal structure and huge nonlinear optical coefficients. Nanostructured semiconductors, for example, nanowires (NWs), offer rich possibilities to tailor nonlinear optical properties and further enhance photonic device performance. In this study, it is demonstrated highly efficient second-harmonic generation in subwavelength wurtzite (WZ) GaAs NWs, reaching 2.5 × 10−5 W−1, which is about seven times higher than their zincblende counterpart. This enhancement is shown to be predominantly caused by an axial built-in electric field induced by spontaneous polarization in the WZ lattice via electric field-induced second-order nonlinear susceptibility and can be controlled optically and potentially electrically. The findings, therefore, provide an effective strategy for enhancing and manipulating the nonlinear optical response in subwavelength NWs by utilizing lattice engineering.

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