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  • Pedersen, Henrik, 1981-, et al. (author)
  • Chloride-based SiC epitaxial growth
  • 2009
  • In: Materials Science Forum Vols. 615-617. - : Trans Tech Publications. ; , s. 89-
  • Conference paper (peer-reviewed)abstract
    • Some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors or/and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability and the effect that the Cl/Si-ratio has on the growth have been studied. MTS is showed to be the most efficient precursor; the growth can be hindered by to much chlorine in the gas mixture. The Cl/Si-ratio is also found to be a process parameter that affects the amount of incorporated nitrogen in the epilayers.
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