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  • Leone, Stefano, 1978-, et al. (author)
  • Growth of Thick 4H-SiC Epitaxial Layers on On-axis Si-Face Substrates with HCl Addition
  • 2009
  • In: Materials Science Forum, Vols. 615-617. - : Trans Tech Publications. ; , s. 93-96
  • Conference paper (peer-reviewed)abstract
    • Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates is reported using hydrogen chloride together with silane and ethylene. In this study, the main process parameters, such as temperature, Cl/Si ratio, C/Si ratio, Si/H2 ratio and ramp up conditions, were studied in detail to understand their effects on the growth mechanisms. Two different optimal epitaxial growth conditions were found. Silicon rich conditions and a high Cl/Si ratio were the key parameters to grow thick homoepitaxial layers with a very low background doping concentration and a growth rate higher than 20 μm/h.
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Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Janzén, Erik, 1954- (1)
Rao, S (1)
Henry, Anne, 1959- (1)
Leone, Stefano, 1978 ... (1)
Pedersen, Henrik, 19 ... (1)
Kordina, Olle (1)
University
Linköping University (1)
Language
English (1)
Year
2009 (1)

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