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  • ul-Hassan, Jawad, 1974-, et al. (author)
  • On-axis Homoepitaxy on Full 2- 4H-SiC Wafer for High Power Applications
  • 2009
  • In: Materials Science Forum Vols. 615-617. - : Trans Tech Publications. - 9780878493340 ; , s. 133-136
  • Conference paper (peer-reviewed)abstract
    • Homoepitaxial growth has been performed on Si-face nominally on-axis 4H-SiC substrates. Special attention was paid to the surface preparation before starting the growth. Si-face polished surfaces were studied after etching under C-rich, Si-rich and under pure hydrogen ambient conditions. In-situ surface preparation, starting growth parameters and growth temperature are found to play a vital role to maintain the polytype stability in the epilayer. High quality epilayers with 100% 4H-SiC were obtained on full 2” wafer. Complete PiN structure was grown and more than 70% of the diodes showed a stable behavior and the forward voltage drift was less than 0.1 V. Also, a comparison of the electroluminescence images of diodes before and after heavy injection of 125 A/cm2 for 30 min did not show any sign of stacking fault formation in the device active region.
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  • Result 1-1 of 1
Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Janzén, Erik, 1954- (1)
ul-Hassan, Jawad, 19 ... (1)
Bergman, Peder, 1961 ... (1)
Henry, Anne, 1959- (1)
Godignon, P. (1)
Brosselard, P. (1)
University
Linköping University (1)
Language
English (1)
Year
2009 (1)

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