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Search: id:"swepub:oai:DiVA.org:liu-46444" > (2008)

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  • Persson, P.O.A., et al. (author)
  • A solid phase reaction between Ti Cx thin films and Al2 O3 substrates
  • 2008
  • In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 103:6
  • Journal article (peer-reviewed)abstract
    • Ti Cx thin films were deposited on Al2 O3 substrates at 900 °C by using a multiple cathode high current pulsed cathodic arc. The Ti:C pulse ratio and, hence, the composition was varied from C rich to Ti rich. It is found that the Al2 O3 substrate is decomposed and reacts with the Ti Cx film to incorporate significant amounts of O and Al in the growing film. When the stoichiometry is suitable, epitaxially oriented Ti2 AlC MAX phase with significant O incorporated is formed. The results indicate that Al2 O3 is not an ideal substrate material for the growth of transition metal carbides and MAX phase thin films. © 2008 American Institute of Physics.
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  • Result 1-1 of 1
Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Rosén, Johanna (1)
Höglund, Carina (1)
McKenzie, D. R. (1)
Bilek, M. M. M. (1)
Persson, P O A (1)
University
Linköping University (1)
Language
English (1)
Year
2008 (1)Undo refine

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