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  • da Silva, AF, et al. (author)
  • Impurity resistivity of the double-donor system Si : P,Bi
  • 1999
  • In: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 60:23, s. 15824-15828
  • Journal article (peer-reviewed)abstract
    • The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same temperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was found to lie between the critical concentrations of the two single-doped systems, Si:P and Si:Bi. [S0163-1829(99)11747-8].
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Sernelius, Bo (1)
Boudinov, H. (1)
da Silva, AF (1)
de Souza, JP (1)
Zheng, HR (1)
Sarachik, MP (1)
University
Linköping University (1)
Language
English (1)
Year
1999 (1)

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