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  • Moskalenko, Evgenii, et al. (author)
  • Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots
  • 2005
  • In: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 5:11, s. 2117-2122
  • Journal article (peer-reviewed)abstract
    • Individual quantum dots have been studied by means of microphotoluminescence with dual-laser excitation. The additional infrared laser influences the dot charge configuration and increases the dot luminescence intensity. This is explained in terms of separate generation of excess electrons and holes into the dot from the two lasers. With increasing dot density and/or sample temperature, the increase of the luminescence intensity vanishes progressively, while the possibility to control the dot charge remains. © 2005 American Chemical Society.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Karlsson, Fredrik (1)
Holtz, Per-Olof (1)
Moskalenko, Evgenii (1)
Monemar, Bo (1)
Schoenfeld, W.V. (1)
Petroff, P.M. (1)
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Donchev, V.T. (1)
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University
Linköping University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
2005 (1)

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