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- Salem, MA, et al.
(författare)
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Atomic force microscope current-imaging study for current density through nanocrystalline silicon dots embedded in SiO2
- 2005
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Ingår i: Japanese Journal of Applied Physics. - : Japan Society of Applied Physics / Japanese Journal of Applied Physics; 1999. - 0021-4922 .- 1347-4065. ; 44:07-Jan, s. L88-L91
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Tidskriftsartikel (refereegranskat)abstract
- Simultaneous surface and current imaging through nanocrystalline silicon (nc-Si) dots embedded in SiO2 was achieved using a contact mode atomic force microscope (AFM) under a tip-to-sample bias voltages of about 5 V. The obtained images were then analyzed using a one-dimensional model of current density, which took account of the spherical shape of the nc-Si dots, the substrate orientation and the sample bias. A comparison between the experimental and theoretical results showed a fair agreement when the current pass through the dot center, although a large difference was found at a higher voltage. In addition, our model predicted tunneling current oscillations due to a change in tip position relative to the dot center.
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