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  • Lundskog, Anders, et al. (författare)
  • Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
  • 2013
  • Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 363, s. 287-293
  • Tidskriftsartikel (refereegranskat)abstract
    • Hexagonal GaN pyramids have been fabricated by hot-wall metal organic chemical vapor deposition (hot-wall MOCVD) and the growth evolution have been studied. It was concluded that the pyramid growth can be divided into two regimes separated by the adsorption kinetics of the {1101} surfaces of the pyramids. In the adsorption regime, the pyramids grow simultaneously in the <1101> and [0001] -directions. In the zero-adsorption regime the pyramids grow only in the [0001] direction. Thus the pyramid growth ceases when the (0001) facet growth has been terminated. Large arrays consisting of highly uniform pyramids with apex radii of 3 nm or less were achieved in the zeroadsorption regime. The growth-regime type was concluded to have a large impact on the uniformity degradation of the pyramids, and their optical properties. The impacts of threading dislocations which enter the pyramid from underneath are also discussed.
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