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1.
  • Rasmussen, F Berg, et al. (author)
  • Comment on "Role played by N and N-N impurities in type-IV semiconductors"
  • 1995
  • In: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 51:20, s. 14756-14757
  • Journal article (other academic/artistic)abstract
    • In a recent paper [Phys. Rev. B 48, 17 806 (1993)] Cunha, Canuto, and Fazzio reported ab initio Hartree-Fock calculations on nitrogen impurities in group-IV semiconductors. In their paper it is suggested that nitrogen pairs form from substitutional atoms on adjacent lattice sites. However, the experimentally observed configuration in silicon and germanium is different from this. The aim of this Comment is to clarify the situation of the nitrogen pair in these materials.
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Type of publication
journal article (1)
Type of content
other academic/artistic (1)
Author/Editor
Jones, R. (1)
Öberg, Sven (1)
Nielsen, B. Bech (1)
Rasmussen, F Berg (1)
University
Luleå University of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
1995 (1)

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