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1.	Lu, Longhui, et al. (author) On-chip reconfigurable mode converter based on cross-connected subwavelength Y-junctions 2020 In: Photonics Research. - : Optical Society of America. - 2327-9125. ; 9:1, s. 43-48 Journal article (peer-reviewed)abstract A novel power-efficient reconfigurable mode converter is proposed and experimentally demonstrated based on cross-connected symmetric Y-junctions assisted by thermo-optic phase shifters on a silicon-on-insulator platform. Instead of using conventional Y-junctions, subwavelength symmetric Y-junctions are utilized to enhance the mode splitting ability. The reconfigurable functionality can be realized by controlling the induced phase differences. Benefited from the cross-connected scheme, the number of heating electrodes can be effectively reduced, while the performance of the device is maintained. With only one-step etching, our fabricated device shows the average insertion losses and cross talks are less than 2.45 and −16.6 dB−16.6 dB, respectively, measured with conversions between two arbitrary compositions of the first four TE modes over an observable 60 nm bandwidth. The converter is switchable and CMOS-compatible, and could be extended for more modes; hence, it can be potentially deployed for advanced and flexible mode multiplexing optical networks-on-chip.

Lu, Longhui, et al. (author)
On-chip reconfigurable mode converter based on cross-connected subwavelength Y-junctions
2020
In: Photonics Research. - : Optical Society of America. - 2327-9125. ; 9:1, s. 43-48
Journal article (peer-reviewed)abstract
- A novel power-efficient reconfigurable mode converter is proposed and experimentally demonstrated based on cross-connected symmetric Y-junctions assisted by thermo-optic phase shifters on a silicon-on-insulator platform. Instead of using conventional Y-junctions, subwavelength symmetric Y-junctions are utilized to enhance the mode splitting ability. The reconfigurable functionality can be realized by controlling the induced phase differences. Benefited from the cross-connected scheme, the number of heating electrodes can be effectively reduced, while the performance of the device is maintained. With only one-step etching, our fabricated device shows the average insertion losses and cross talks are less than 2.45 and −16.6 dB−16.6 dB, respectively, measured with conversions between two arbitrary compositions of the first four TE modes over an observable 60 nm bandwidth. The converter is switchable and CMOS-compatible, and could be extended for more modes; hence, it can be potentially deployed for advanced and flexible mode multiplexing optical networks-on-chip.

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